The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

A method for preparing a complex comprising a radioisotope of gallium for use in radiotherapy or in a medical imaging procedure, said method comprising adding a gallium radioisotope solution obtained directly from a gallium radionuclide generator to a composition comprising a pharmaceutically acceptable buffer and optionally also a pharmaceutically acceptable basic reagent, in amounts sufficient to increase the pH to a level in the range of 3 to 8, wherein the composition further comprises a chelator that is able to chelate radioactive gallium within said pH range and at moderate temperature, said chelator being optionally linked to a biological targeting agent. Kits and compositions for use in the method are also described and claimed.

A method for preparing a complex comprising a radioisotope of gallium for use in radiotherapy or in a medical imaging procedure, said method comprising adding a gallium radioisotope solution obtained directly from a gallium radionuclide generator to a composition comprising a pharmaceutically acceptable buffer and optionally also a pharmaceutically acceptable basic reagent, in amounts sufficient to increase the pH to a level in the range of 3 to 8, wherein the composition further comprises a chelator that is able to chelate radioactive gallium within said pH range and at moderate temperature, said chelator being optionally linked to a biological targeting agent. Kits and compositions for use in the method are also described and claimed.

A method of preparing an indium oxide spherical powder with a controllable grain shape includes: (1) reacting a sulfuric acid solution, and then adding a nitric acid solution, to react with the metal indium to obtain a mixed solution system containing indium sulfate and indium nitrate; (2) adjusting a concentration of indium ions in the mixed solution system to between 0.45˜0.6M; (3) performing a precipitation reaction of the mixed solution with a precipitant, until a pH value of the solution is between 9˜10, and then having the solution precipitated and aged to obtain an indium hydroxide precursor slurry; (4) using a ceramic membrane to filter and wash the precursor slurry, and ending the washing to obtain a purified precursor sample; (5) drying the precursor sample at 80˜130° C.; and (6) ball-milling the precursor sample, and calcining the precursor at a calcination temperature to obtain the indium oxide powder.

A method of preparing an indium oxide spherical powder with a controllable grain shape includes: (1) reacting a sulfuric acid solution, and then adding a nitric acid solution, to react with the metal indium to obtain a mixed solution system containing indium sulfate and indium nitrate; (2) adjusting a concentration of indium ions in the mixed solution system to between 0.45˜0.6M; (3) performing a precipitation reaction of the mixed solution with a precipitant, until a pH value of the solution is between 9˜10, and then having the solution precipitated and aged to obtain an indium hydroxide precursor slurry; (4) using a ceramic membrane to filter and wash the precursor slurry, and ending the washing to obtain a purified precursor sample; (5) drying the precursor sample at 80˜130° C.; and (6) ball-milling the precursor sample, and calcining the precursor at a calcination temperature to obtain the indium oxide powder.

A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

Provided is a method of producing semiconductor nanoparticles that exhibit a band-edge emission, and are superior in quantum yield. The method includes raising the temperature of a first mixture containing a silver (Ag) salt, a salt containing at least one of indium (In) and gallium (Ga), a solid compound that serves as a supply source of sulfur (S), and an organic solvent to a temperature in a range of from 125 □C to 175 □C, and heat-treating, subsequent to the raising of the temperature, the first mixture at a temperature in a range of from 125 □C to 175 □C for three seconds or more to obtain a solution containing semiconductor nanoparticles, and decreasing the temperature of the solution containing semiconductor nanoparticles. The solid compound that serves as a supply source of S contains thiourea.

A quantum dot device and an electronic device including the device are provided. The quantum dot device includes a first electrode and a second electrode, a quantum dot layer disposed between the first electrode and the second electrode, and a hole auxiliary layer disposed between the quantum dot layer and the first electrode, wherein the hole auxiliary layer includes nickel oxide and a self-assembled monolayer disposed between the hole auxiliary layer and the quantum dot layer, the self-assembled monolayer including an organic compound represented by Chemical Formula 1.

A quantum dot device and an electronic device including the device are provided. The quantum dot device includes a first electrode and a second electrode, a quantum dot layer disposed between the first electrode and the second electrode, and a hole auxiliary layer disposed between the quantum dot layer and the first electrode, wherein the hole auxiliary layer includes nickel oxide and a self-assembled monolayer disposed between the hole auxiliary layer and the quantum dot layer, the self-assembled monolayer including an organic compound represented by Chemical Formula 1.

A thermochemical method for storing and releasing thermal energy by means of a compound in solid form of formula AO.sub.xB.sub.y.zH.sub.2O, in which: A is an element selected from uranium (U) and thorium (Th); O is the element oxygen; B is an anion or an oxoanion; x is a number comprised between 0 and 4; y is a number comprised between 0 and 2; z is a number greater than 0 and less than 10; it being understood that at least one of x and y is different from 0 and that the compound of formula Th(SO.sub.4).sub.2.xH.sub.2O is excluded.