Provided is a manufacturing method of indium oxide nanorods, including the following steps: providing a temperature furnace divided into a first zone and a second zone; putting an indium metal source in the first zone and putting a substrate in the second zone; modulating a temperature of the first zone to a first temperature and modulating a temperature of the second zone to a second temperature, wherein the first temperature is higher than the second temperature; and inputting argon and oxygen into the temperature furnace when the temperature of the first zone reaches the first temperature and the temperature of the second zone reaches the second temperature, wherein a ratio of argon and oxygen is in a range of 30:1 to 70:1 such that a plurality of indium oxide nanorods are formed on the substrate. An indium oxide nanorod is also provided.

Provided is a manufacturing method of indium oxide nanorods, including the following steps: providing a temperature furnace divided into a first zone and a second zone; putting an indium metal source in the first zone and putting a substrate in the second zone; modulating a temperature of the first zone to a first temperature and modulating a temperature of the second zone to a second temperature, wherein the first temperature is higher than the second temperature; and inputting argon and oxygen into the temperature furnace when the temperature of the first zone reaches the first temperature and the temperature of the second zone reaches the second temperature, wherein a ratio of argon and oxygen is in a range of 30:1 to 70:1 such that a plurality of indium oxide nanorods are formed on the substrate. An indium oxide nanorod is also provided.

To provide a crystalline oxide semiconductor film, an ion is made to collide with a target including a crystalline In—Ga—Zn oxide, thereby separating a flat-plate-like In—Ga—Zn oxide in which a first layer including a gallium atom, a zinc atom, and an oxygen atom, a second layer including an indium atom and an oxygen atom, and a third layer including a gallium atom, a zinc atom, and an oxygen atom are stacked in this order; and the flat-plate-like In—Ga—Zn oxide is irregularly deposited over a substrate while the crystallinity is maintained.

A highly reliable semiconductor device includes a first insulator, a second insulator, a first conductor, a third insulator, an oxide semiconductor, second and third conductors, a fourth insulator, a fourth conductor overlapping with a region between the second and third conductors, a fifth insulator, and a sixth insulator in this order. The fourth insulator is in contact with top and side surfaces of the oxide semiconductor, and a top surface of the third insulator. The fifth insulator is in contact with the side surface of the oxide semiconductor and the top surface of the third insulator so as to cover the oxide semiconductor, the second to fourth conductors, and the fourth insulator. The first, second, fifth, and sixth insulators have low permeability for hydrogen, water, and oxygen. The first and sixth insulators have a thinner thickness than the second and sixth insulators, respectively.

A method for recovering a resource from a CIGS thin-film solar cell to be recycled includes a) providing the CIGS thin-film solar cell, and b) subjecting the CIGS thin-film solar cell to a cooling treatment at a predetermined temperature, such that a light absorbing unit of the CIGS thin-film solar cell can be recovered due to thermal strain difference of materials of the CIGS thin-film solar cell.

A method for recovering a resource from a CIGS thin-film solar cell to be recycled includes a) providing the CIGS thin-film solar cell, and b) subjecting the CIGS thin-film solar cell to a cooling treatment at a predetermined temperature, such that a light absorbing unit of the CIGS thin-film solar cell can be recovered due to thermal strain difference of materials of the CIGS thin-film solar cell.

Provided are core-shell particles that have high luminous efficiency and are useful as quantum dots, a method for producing the same, and a film produced using the core-shell particles. The core-shell particles of the invention are core-shell particles having a core containing a Group III element and a Group V element; and a shell covering at least a portion of the surface of the core and containing a Group II element and a Group VI element, in which the proportion of the peak intensity ratio of the Group II element with respect to the peak intensity ratio of the Group III element as measured by X-ray photoelectron spectroscopy analysis is 0.25 or higher.

A battery cell having an anode or cathode comprising an acidified metal oxide (“AMO”) material, preferably in monodisperse nanoparticulate form 20 nm or less in size, having a pH<7 when suspended in a 5 wt % aqueous solution and a Hammett function H.sub.0>−12, at least on its surface.

A battery cell having an anode or cathode comprising an acidified metal oxide (“AMO”) material, preferably in monodisperse nanoparticulate form 20 nm or less in size, having a pH<7 when suspended in a 5 wt % aqueous solution and a Hammett function H.sub.0>−12, at least on its surface.

Methods for purifying reaction precursors used in the synthesis of inorganic compounds and methods for synthesizing inorganic compounds from the purified precursors are provided. Also provided are methods for purifying the inorganic compounds and methods for crystallizing the inorganic compounds from a melt. γ and X-ray detectors incorporating the crystals of the inorganic compounds are also provided.