C01G17/00

Dynamically tunable materials for parity-time symmetric electro-optical devices

A device includes a light adjustment apparatus having a first material and a second material. The first material includes a first real dielectric permittivity and a positive imaginary dielectric permittivity. The second material includes a second real dielectric permittivity and a negative imaginary dielectric permittivity. The first and second materials affect the flow of light. The light adjustment apparatus includes a tunable material to enable adjustment of the dielectric permittivity of the respective materials.

GERMANANE ANALOGS AND OPTOELECTRONIC DEVICES USING THE SAME
20190006605 · 2019-01-03 ·

The present invention provides novel two-dimensional van der Waals materials and stacks of those materials. Also provided are methods of making and using such materials.

Method of extracting germanium from germanium deposit using thermal reduction process

A method of extracting germanium from a germanium deposit using a thermal reduction process is disclosed. The method includes: adding sodium monophosphate to a germanium deposit to obtain a mixed germanium deposit; isolating the mixed germanium deposit from air; increasing the temperature and then baking the mixed germanium deposit; and obtaining a germanium concentrate after volatilization of the mixed germanium deposit.

Method of extracting germanium from germanium deposit using thermal reduction process

A method of extracting germanium from a germanium deposit using a thermal reduction process is disclosed. The method includes: adding sodium monophosphate to a germanium deposit to obtain a mixed germanium deposit; isolating the mixed germanium deposit from air; increasing the temperature and then baking the mixed germanium deposit; and obtaining a germanium concentrate after volatilization of the mixed germanium deposit.

SYSTEM AND METHOD TO QUANTIFY STRUCTURAL PROPERTIES AND PREDICT BULK PROPERTIES OF INORGANIC MATERIALS
20180336288 · 2018-11-22 ·

Methods for representing crystal structure of inorganic materials in matrix form, and for quantitative comparison of multiple inorganic materials, can be employed to identify candidate materials with high potential to possess a desired property. Such methods can include conversion of an atomic coordinate set to a coordinate set for an anion only lattice, anion substitution, and unit cell re-scaling. Such methods can further include simulation of x-ray diffraction data for modified anion-only lattices, and generation of n2 matrices from the simulated diffraction data. Quantitative structural similarity values can be derived from the n2 matrices. The quantitative structural similarity values can be useful for structural categorization, as well as prediction of functional properties.

Solid electrolyte material and lithium battery

A solid electrolyte material includes: Li.sub.2+yGe.sub.1xM.sub.xO.sub.3. x satisfies an equation of 0x<0.5. y satisfies an equation of 0.5<y<0.5. M represents at least one element selected from Mg, Al, Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Ga, Zr, Sn, Nb, Sb, Cu, Sc, Ta, and Hf. Ge has a six-coordinate structure, or the solid electrolyte material has a crystal structure attributed to monoclinic, C12/c1.

Solid electrolyte material and lithium battery

A solid electrolyte material includes: Li.sub.2+yGe.sub.1xM.sub.xO.sub.3. x satisfies an equation of 0x<0.5. y satisfies an equation of 0.5<y<0.5. M represents at least one element selected from Mg, Al, Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Ga, Zr, Sn, Nb, Sb, Cu, Sc, Ta, and Hf. Ge has a six-coordinate structure, or the solid electrolyte material has a crystal structure attributed to monoclinic, C12/c1.

Hexagonal 6H barium germanium oxide, method for producing same, sintered body, and target

Provided are a barium germanium oxide having a 3-4 eV band gap, a method for producing the same, a sintered body thereof, and a target thereof. The barium germanium oxide includes at least Ba, Ge, and O, includes a crystal represented by a general formula of ABO.sub.3 (here, A includes at least Ba and B includes at least Ge), and has a hexagonal 6H-type perovskite structure.

Germanane analogs and optoelectronic devices using the same

The present invention provides novel two-dimensional van der Waals materials and stacks of those materials. Also provided are methods of making and using such materials.

Germanane analogs and optoelectronic devices using the same

The present invention provides novel two-dimensional van der Waals materials and stacks of those materials. Also provided are methods of making and using such materials.