A preparation method of a cube-like ZnSnO.sub.3 composite coated with highly graphitized fine ash comprises steps: S1: with the gasified fine slag of pulverized coal as a raw material, preparing the fine ash by adopting a three-step acidification method; and S2: adding the fine ash prepared in the S1 into a container filled with distilled water, ultrasonically dispersing for 20-40 min, adding equal molar masses of SnCl.sub.4.Math.5H.sub.2O and (Zn(NO.sub.3).Math.6H.sub.2O respectively, uniformly stirring, dropwise adding ammonia into the mixed solution and magnetically stirring until the pH value of the mixed solution is 12, heating the mixed solution, washing the product obtained with deionized water and ethanol for 2-4 times, and finally drying to obtain a ZnSnO.sub.3@fine composite. With the dielectric property and conductivity adjusted, the composite prepared reveals a good impedance matching performance and an improved MA performance.

In one embodiment of the present invention, provided are a method for producing indium tin oxide particles, including a step of obtaining a precursor solution including indium and tin by heating an indium carboxylate having 1 to 3 carbon atoms and a tin carboxylate having 1 to 3 carbon atoms in a solvent including a carboxylic acid having 6 to 20 carbon atoms, and a step of obtaining a reaction solution including indium tin oxide particles by adding dropwise the obtained precursor solution to a heated solvent including oleyl alcohol and linear alcohol having 14 to 18 carbon atoms, in which, in the solvent, a concentration A of the linear alcohol having 14 to 18 carbon atoms with respect to all solvents, in units of % by mass, and a concentration B of the oleyl alcohol with respect to all solvents, in units of % by mass, satisfy the expression 1; and a method for producing a curable composition.

A/(A+B)>0.062:  Expression 1

The nanoparticle assembly includes nanoparticles having an average primary particle size of 60 nm or less, and the nanoparticle assembly has a diameter of more than 500 nm and 5 μm or less.

The nanoparticle assembly includes nanoparticles having an average primary particle size of 60 nm or less, and the nanoparticle assembly has a diameter of more than 500 nm and 5 μm or less.

An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.

An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.

The present invention is a method for producing perovskite type quantum dots, wherein, using a plurality of precursor solutions each containing a different element, each of the plurality of precursor solutions is heated and sprayed as an aerosol of the precursor solution, and the plurality of aerosols are collided to cause a gas phase reaction, dropping in a solvent to synthesize core particles containing the different elements. This provides a method for producing quantum dots that enables control of the particle size and yields nanoparticles with a uniform particle size even in large-scale synthesis.

The present invention is able to provide an LGPS-based solid electrolyte characterized by: satisfying a composition of Li.sub.uSn.sub.vP.sub.2S.sub.yX.sub.z (6≤u≤14, 0.8≤v≤2.1, 9≤y≤16, 0<z≤1.6; X represents Cl, Br, or I); and having, in X-ray diffraction (CuKα: λ=1.5405 Å), peaks at least at positions of 2θ=19.80°±0.50°, 20.10°±0.50°, 26.60°±0.50°, and 29.10°±0.50°.

A method of forming a variable refractive index thin film includes forming a coating including a tin (II) halide precursor and a liquid solvent, where the composition and/or concentration of the liquid solvent may vary spatially over one or more lateral dimension(s) of the coating. Annealing at elevated temperature may induce densification of the coating and the formation of a thin film having a variable refractive index. Local variability in the refractive index may be correlated to the location oxidation state of tin within the thin film, which may be related to the conformation of the liquid solvent.

Described are luminescent components with excellent performance and stability. The luminescent components comprise a first element including first luminescent crystals from the class of perovskite crystals, embedded a first polymer P1 and a second element comprising a second solid polymer composition, said second polymer composition optionally comprising second luminescent crystals embedded in a second polymer P2. Polymers P1 and P2 differ and are further specified in the claims. Also described are methods for manufacturing such components and devices comprising such components.