Described herein are materials comprising (1) a monomer or a polymer; (2) perovskite quantum dots interspersed in the monomer or the polymer, each of the perovskite quantum dots independently having the formula:
Cs.sub.a(MA).sub.b(FA).sub.cRb.sub.dPb.sub.pSn.sub.rBi.sub.sCl.sub.xBr.sub.yI.sub.z,
wherein: MA is CH.sub.3NH.sub.3; FA is HC(NH.sub.2).sub.2; a, b, c, and d are each independently a number from 0 to 1, provided that the sum of a, b, c, and d is 1; p, r, and s are each independently a number from 0 to 1, provided that the sum of p, r, and s is 1; and x, y, and z are each independently a number from 0 to 3, provided that the sum of x, y, and z is 3; and (3) an additive interspersed in the monomer or the polymer, the additive comprising: a halide-based additive; a light scattering agent having the formula: M.sub.2O.sub.3, wherein M is, at each occurrence, independently, a metal, provided that at most one instance of M is a group 13 element; or both. Also described are devices comprising such materials, as well as methods of forming such materials.

The present invention relates to a method for producing a cesium halide, and more particularly, to a novel method for producing a cesium halide with high purity; and perovskites produced using same.

This application provides an A/M/X crystalline material, a photovoltaic device, and preparation methods thereof. The photovoltaic device includes a photoactive crystalline material layer (103). The photoactive crystalline material layer (103) includes a penetrating crystal grain (313), where the penetrating crystal grain (313) is a crystal grain penetrating through the photoactive crystalline material layer (103), and a percentage p of a quantity of penetrating crystal grains (313) in a total quantity of crystal grains of the photoactive crystalline material layer (103) is 80%. The photoactive crystalline material layer (103) includes a backlight side (113) and a backlight crystal grain (31, 32, 33), where the backlight crystal grain (31, 32, 33) is a crystal grain exposed to the backlight side (113) and has a backlight crystal face exposed to the backlight side (113). At least one region of the backlight side (113) has an average flatness index R.sub.avg being 75.

An A/M/X crystalline material, a photovoltaic device, and preparation methods thereof are provided. The photovoltaic device includes a photoactive crystalline material layer. The photoactive crystalline material layer includes a penetrating crystal, where the penetrating crystal is a crystal penetrating through the photoactive crystalline material layer, and a percentage p of a quantity of penetrating crystals in a total quantity of crystals of the photoactive crystalline material layer is 80%. The photoactive crystalline material layer includes a backlight side and a backlight crystal, where the backlight crystal is a crystal exposed to the backlight side and has a backlight crystal face exposed to the backlight side. At least one region of the backlight side has an average flatness index R.sub.avg being 75.

A capacitor includes a first electrode, a second electrode, and a dielectric. The dielectric is disposed between the first electrode and the second electrode. The dielectric includes a crystal having a composition represented by APb.sub.2X.sub.5, where A is a cation which is a molecular ion containing at least one nitrogen atom and X is a halogen element.

A method for producing a photoresponsive nanoparticle. The method includes a first step of continuously transporting a first raw material liquid containing a lead halide and a second raw material liquid containing a fatty acid cesium to a heated mixer through a transport path, and a second step of mixing the first raw material liquid and the second raw material liquid.

The disclosure belongs to the field of preparation of radioisotopes for medical uses and relates to a method for extracting lead-212 and bismuth-212 from a thorium-232 decay chain, including: passing a solution containing thorium-232 decay chain substance through an anion exchange resin column, the solution containing thorium-232 decay chain substance containing halogen ions, and a concentration of hydrogen ions in the solution containing thorium-232 decay chain substance being more than 0.01 mol/L, lead-212 and bismuth-212 being adsorbed by the anion exchange resin column and other nuclides passing through the anion exchange resin column without being adsorbed; and introducing eluting agents to desorb lead-212 and bismuth-212 from the anion exchange resin column, so as to obtain lead-212 and bismuth-212 by separation and extraction. The disclosure can simultaneously extract lead-212 and bismuth-212 with a high extraction speed and high purity, and is not easy to cause organic pollution of products.