C01G27/00

Complex fluoride phosphor and method for producing same

Provided is a method for producing a phosphor having a chemical composition represented by formula (I), A.sub.2MF.sub.6:Mn (I) (A is one type or more of an alkali metal selected from Li, Na, K, Rb, and Cs, and includes at least Na and/or K, and M is one type or more of a tetravalent element selected from Si, Ti, Zr, Hf, Ge, and Sn.), the method comprising preparing a first hydrofluoric acid solution containing M and a second hydrofluoric acid solution containing A as well as either dissolving a compound containing Mn in either the first hydrofluoric acid solution or the second hydrofluoric acid solution or preparing a separate solution in which the compound containing Mn is dissolved. When the solutions are mixed to precipitate the phosphor of the formula (I), the solutions are mixed so that the concentration of M is 0.1 to 0.5 mol/liter when all the solutions are mixed. According to the present invention, a complex fluoride phosphor having excellent luminescence properties can be produced stably with high yield.

Magneto-optical material, method for producing same and magneto-optical device

Provided, as a transparent magneto-optical material which does not absorb fiber laser light within a wavelength range of 0.9-1.1 m and is thus suitable for constituting a magneto-optical device such as an optical isolator wherein the formation of a thermal lens is suppressed, is a magneto-optical material which is composed of a transparent ceramic that contains a complex oxide represented by formula (1) as a main component, or which is composed of a single crystal of a complex oxide represented by formula (1).
Tb.sub.2xR.sub.2(2-x)O.sub.8-x(1)
(In the formula, 0.800<x<1.00, and R represents at least one element selected from the group consisting of silicon, germanium, titanium, tantalum tin, hafnium and zirconium (excluding the cases where R represents only silicon, germanium or tantalum)).

Insulator material for use in RRAM
10256403 · 2019-04-09 · ·

The present disclosure relates generally to Hf-comprising materials for use in, for example, the insulator of a RRAM device, and to methods for making such materials. In one aspect, the disclosure provides a method for the manufacture of a layer of material over a substrate, said method including a) providing a substrate, and b) depositing a layer of material on said substrate via ALD at a temperature of from 250 to 500 C., said depositing step comprising: at least one HfX.sub.4 pulse, and at least one trimethyl-aluminum (TMA) pulse, wherein X is a halogen selected from Cl, Br, I and F and is preferably Cl.

Scintillator and radiation detector

A scintillator, having a composition represented by the following general formula (1), including a substitution element A, the substitution element A comprising at least La, and a total molar content of the substitution element A being 0.00001 mol or more and 0.05 mol or less in 1 mol of the scintillator, and further including an activator element B, the activator element B being constituted from Ce, having a perovskite-type crystal structure, and exhibiting a linear transmittance of light at a wavelength of 800 nm, at a thickness of 1.9 mm, of 30% or more. QM.sub.xO.sub.3y . . . (1): wherein Q represents one or more elements selected from the group consisting of Ca, Sr and Ba; M represents Hf; Q and M are each optionally substituted with other element at a proportion of 20% by mol or less; and x and y respectively satisfy 0.5?x?1.5 and 0.7?y?1.5.

Scintillator and radiation detector

A scintillator, having a composition represented by the following general formula (1), including a substitution element A, the substitution element A comprising at least La, and a total molar content of the substitution element A being 0.00001 mol or more and 0.05 mol or less in 1 mol of the scintillator, and further including an activator element B, the activator element B being constituted from Ce, having a perovskite-type crystal structure, and exhibiting a linear transmittance of light at a wavelength of 800 nm, at a thickness of 1.9 mm, of 30% or more. QM.sub.xO.sub.3y . . . (1): wherein Q represents one or more elements selected from the group consisting of Ca, Sr and Ba; M represents Hf; Q and M are each optionally substituted with other element at a proportion of 20% by mol or less; and x and y respectively satisfy 0.5?x?1.5 and 0.7?y?1.5.

COMPOSITIONS, APPARATUS AND METHODS FOR CAPACITIVE TEMPERATURE SENSING

A passive temperature-sensing apparatus, which includes a capacitive sensing element that includes a capacitive sensing composition that includes a ferroelectric ceramic material that exhibits a measurable electrical Curie temperature that is below 30 degrees C. The capacitive sensing composition exhibits a negative slope of capacitance versus temperature over the temperature range of from 30 degrees C. to 150 degrees C.

Method For Preparing A Sol-Gel Solution Which Can Be Used For Preparing A Barium Titanate Ceramic Doped With Hafnium And/or With At Least One Lanthanide Element

The invention relates to a method for preparing a sol-gel solution which can be used to prepare a barium titanate ceramic doped with hafnium and/or with at least one lanthanide element, comprising the following steps: a) a step to place a first mixture comprising a barium carboxylate and a diol solvent in contact with a second mixture comprising a titanium alkoxide and a hafnium alkoxide and/or an alkoxide of a lanthanide element in a monoalcohol solvent; b) a step to distil the mixture resulting from step a) to remove at least part of the monoalcohol solvent; c) a step to add acetic acid, under heat, to the distilled mixture of step b).

Compositions, apparatus and methods for capacitive temperature sensing

A passive temperature-sensing apparatus, which includes a capacitive sensing element that includes a capacitive sensing composition that includes a ferroelectric ceramic material that exhibits a measurable electrical Curie temperature that is below 30 degrees C. The capacitive sensing composition exhibits a negative slope of capacitance versus temperature over the temperature range of from 30 degrees C. to 150 degrees C.

Photosensitive composition and pattern formation method

According to one embodiment, a photosensitive composition includes a great number of photosensitive core-shell type nano-particles each including a core and a shell and having a structure that the core is metal oxide particle and covered by the shell. The shell includes a) unsaturated carboxylic acid or unsaturated carboxylate, which is a negatively ionized unsaturated carboxylic acid, and b) silylated unsaturated carboxylic acid or unsaturated carboxylate which is negatively ionized silylated unsaturated carboxylic acid.

Photosensitive composition and pattern formation method

According to one embodiment, a photosensitive composition includes a great number of photosensitive core-shell type nano-particles each including a core and a shell and having a structure that the core is metal oxide particle and covered by the shell. The shell includes a) unsaturated carboxylic acid or unsaturated carboxylate, which is a negatively ionized unsaturated carboxylic acid, and b) silylated unsaturated carboxylic acid or unsaturated carboxylate which is negatively ionized silylated unsaturated carboxylic acid.