A semiconductor nanocrystal can be made by an in situ redox reaction between an M donor and an E donor.

A chalcogenide material and an electronic device are provided. The chalcogenide material may include 0.1-5 atomic percent (at %) of silicon, 15-22 at % of germanium, 30-35 at % of arsenic and 40-50 at % of selenium. The electronic device may include a semiconductor memory device, the semiconductor memory device including a first memory cell that includes a first switching element. The first switching element may include a chalcogenide material including 0.1-5 atomic percent (at %) of silicon, 15-22 at % of germanium, 30-35 at % of arsenic, and 40-50 at % of selenium.

A semiconductor nanocrystal can be made by an in situ redox reaction between an M donor and an E donor.

A semiconductor nanocrystal can be made by an in situ redox reaction between an M donor and an E donor.

Methods for representing crystal structure of inorganic materials in matrix form, and for quantitative comparison of multiple inorganic materials, can be employed to identify candidate materials with high potential to possess a desired property. Such methods can include conversion of an atomic coordinate set to a coordinate set for an anion only lattice, anion substitution, and unit cell re-scaling. Such methods can further include simulation of x-ray diffraction data for modified anion-only lattices, and generation of n2 matrices from the simulated diffraction data. Quantitative structural similarity values can be derived from the n2 matrices. The quantitative structural similarity values can be useful for structural categorization, as well as prediction of functional properties.

The present invention relates to the field of nanotechnology, more specifically to the manufacture or treatment of nanostructures, and in particular provides arsenic sulfide nanostructures, as well as a process for obtaining nanostructures of arsenic sulfide. The present invention provides a process for obtaining arsenic sulfide (AsS) nanostructures from a microorganism, which comprises the steps of culturing under appropriate conditions the strain Fusibacter ascotence in the presence of a source of sulfur and a source of arsenic; and recovering arsenic sulfide nanostructures (AsS) from the precipitate obtained from said culture. The present invention provides, also, a nanostructure of arsenic sulfide which is a nanowire having a monoclinic crystal structure. The present invention further provides a nanostructure of arsenic sulfide, which is a nanoparticle with a monoclinic crystal structure.

Ligand-capped inorganic particles, films composed of the ligand-capped inorganic particles, and methods of patterning the films are provided. Also provided are electronic, photonic, and optoelectronic devices that incorporate the films. The ligands that are bound to the inorganic particles are composed of a cation/anion pair. The anion of the pair is bound to the surface of the particle and at least one of the anion and the cation is photosensitive.

The present invention provides a nonaqueous electrolytic solution that provides an electric double layer capacitor having excellent durability. The nonaqueous electrolytic solution of the present invention is a nonaqueous electrolytic solution for electric double layer capacitors prepared by dissolving a quaternary ammonium salt as an electrolyte in a nonaqueous solvent, and the nonaqueous electrolytic solution has an alkali metal cation concentration of 0.1 to 30 ppm.

Disclosed is a plurality of metal chalcogenide nanocrystals coated with multiple organic and inorganic ligands; wherein the metal is selected from Hg, Pb, Sn, Cd, Bi, Sb or a mixture thereof; and the chalcogen is selected from S, Se, Te or a mixture thereof; wherein the multiple inorganic ligands includes at least one inorganic ligands are selected from S.sup.2, HS.sup., Se.sup.2, Te.sup.2, OH.sup., BF.sub.4.sup., PF.sub.6.sup., Cl.sup., Br.sup., I.sup., As.sub.2Se.sub.3, Sb.sub.2S.sub.3, Sb.sub.2Te.sub.3, Sb.sub.2Se.sub.3, As.sub.2S.sub.3 or a mixture thereof; and wherein the absorption of the CH bonds of the organic ligands relative to the absorption of metal chalcogenide nanocrystals is lower than 50%, preferably lower than 20%.

The present invention relates to a pharmaceutical composition for preventing or treating liver cancer and a method for producing same, the composition comprising tetraarsenic hexoxide in which the content of tetraarsenic hexoxide crystalline polymorph a (As.sub.4O.sub.6-a) is 99% or more. The composition of the present invention exhibits an excellent cancer cell proliferation inhibition effect and thus can be useful as an anticancer drug.