A chalcogenide material and an electronic device are provided. The chalcogenide material may include 0.1-5 atomic percent (at %) of silicon, 15-22 at % of germanium, 30-35 at % of arsenic and 40-50 at % of selenium. The electronic device may include a semiconductor memory device, the semiconductor memory device including a first memory cell that includes a first switching element. The first switching element may include a chalcogenide material including 0.1-5 atomic percent (at %) of silicon, 15-22 at % of germanium, 30-35 at % of arsenic, and 40-50 at % of selenium.

A chalcogenide material and an electronic device are provided. The chalcogenide material may include 1-10 atomic percent (at %) of silicon, 10-20 at % of germanium, 25-35 at % of arsenic, 40-50 at % of selenium, and 1-10 at % of tellurium. The electronic device may include a switching element including a chalcogenide material, the chalcogenide material including 1-10 atomic percent (at %) of silicon, 10-20 at % of germanium, 25-35 at % of arsenic, 40-50 at % of selenium, and 1-10 at % of tellurium. The electronic device may further include a first electrode electrically coupled to the switching element and a second electrode electrically coupled to the switching element.

A nanocrystal preparation method comprises the following steps: dissolving, in a first selected solvent, a first precursor which is in a gaseous state under normal temperature and normal pressure, to form a first precursor solution; dissolving a second precursor in a second selected solvent to form a second precursor solution, wherein the second precursor is a precursor of a metal element of Group I, Group II, Group III or Group IV; and in an inert gas atmosphere, adding the first precursor solution into a reaction vessel which contains the second precursor solution, wherein the first precursor chemically reacts with the second precursor to generate a nanocrystal. The present invention further discloses a nanocrystal prepared by the above method and an apparatus for preparing and storing a gas-dissolved solution. With the preparation method according to the invention, the amount of the first precursor in a gaseous state can be accurately controlled, the reaction is more uniform and more controllable, and the obtained nanocrystal has uniform volume distribution and a higher luminescent quantum yield.

A nanocrystal preparation method comprises the following steps: dissolving, in a first selected solvent, a first precursor which is in a gaseous state under normal temperature and normal pressure, to form a first precursor solution; dissolving a second precursor in a second selected solvent to form a second precursor solution, wherein the second precursor is a precursor of a metal element of Group I, Group II, Group III or Group IV; and in an inert gas atmosphere, adding the first precursor solution into a reaction vessel which contains the second precursor solution, wherein the first precursor chemically reacts with the second precursor to generate a nanocrystal. The present invention further discloses a nanocrystal prepared by the above method and an apparatus for preparing and storing a gas-dissolved solution. With the preparation method according to the invention, the amount of the first precursor in a gaseous state can be accurately controlled, the reaction is more uniform and more controllable, and the obtained nanocrystal has uniform volume distribution and a higher luminescent quantum yield.

The present invention relates to: layered gallium arsenide (GaAs), which is more particularly layered GaAs, which, unlike the conventional bulk GaAs, has a two-dimensional crystal structure, has the ability to be easily exfoliated into nanosheets, and exhibits excellent electrical properties by having a structure that enables easy charge transport in the in-plane direction; a method of preparing the same; and a GaAs nanosheet exfoliated from the same.

A thermoelectric material containing a dichalcogenide compound represented by Formula 1 and having low thermoelectric conductivity and high Seebeck coefficient:
R.sub.aT.sub.bX.sub.2-nY.sub.n(1)
wherein R is a rare earth element, T includes at least one element selected from the group consisting of Group 1 elements, Group 2 elements, and a transition metal, X includes at least one element selected from the group consisting of S, Se, and Te, Y is different from X and includes at least one element selected from the group consisting of S, Se, Te, P, As, Sb, Bi, C, Si, Ge, Sn, B, Al, Ga and In, a is greater than 0 and less than or equal to 1, b is greater than or equal to 0 and less than 1, and n is greater than or equal to 0 and less than 2.

A nanocrystal preparation method comprises the following steps: dissolving, in a first selected solvent, a first precursor which is in a gaseous state under normal temperature and normal pressure, to form a first precursor solution; dissolving a second precursor in a second selected solvent to form a second precursor solution, wherein the second precursor is a precursor of a metal element of Group I, Group II, Group III or Group IV; and in an inert gas atmosphere, adding the first precursor solution into a reaction vessel which contains the second precursor solution, wherein the first precursor chemically reacts with the second precursor to generate a nanocrystal. The present invention further discloses a nanocrystal prepared by the above method and an apparatus for preparing and storing a gas-dissolved solution. With the preparation method according to the invention, the amount of the first precursor in a gaseous state can be accurately controlled, the reaction is more uniform and more controllable, and the obtained nanocrystal has uniform volume distribution and a higher luminescent quantum yield.

A nanocrystal preparation method comprises the following steps: dissolving, in a first selected solvent, a first precursor which is in a gaseous state under normal temperature and normal pressure, to form a first precursor solution; dissolving a second precursor in a second selected solvent to form a second precursor solution, wherein the second precursor is a precursor of a metal element of Group I, Group II, Group III or Group IV; and in an inert gas atmosphere, adding the first precursor solution into a reaction vessel which contains the second precursor solution, wherein the first precursor chemically reacts with the second precursor to generate a nanocrystal. The present invention further discloses a nanocrystal prepared by the above method and an apparatus for preparing and storing a gas-dissolved solution. With the preparation method according to the invention, the amount of the first precursor in a gaseous state can be accurately controlled, the reaction is more uniform and more controllable, and the obtained nanocrystal has uniform volume distribution and a higher luminescent quantum yield.

The present invention relates to the field of nanotechnology, more specifically to the manufacture or treatment of nanostructures, and in particular provides arsenic sulfide nanostructures, as well as a process for obtaining nanostructures of arsenic sulfide.

The present invention provides a process for obtaining arsenic sulfide (AsS) nanostructures from a microorganism, which comprises the steps of culturing under appropriate conditions the strain Fusibacter ascotence in the presence of a source of sulfur and a source of arsenic; and recovering arsenic sulfide nanostructures (AsS) from the precipitate obtained from said culture.

The present invention provides, also, a nanostructure of arsenic sulfide which is a nanowire having a monoclinic crystal structure. The present invention further provides a nanostructure of arsenic sulfide, which is a nanoparticle with a monoclinic crystal structure.

There is provided a method for the removal of arsenic from an arsenical bearing sulfides ore, comprising a thermal treatment of arsenical sulfide in the presence of sulfur dioxide, yielding a calcine and a sublimate, the sublimate containing arsenious oxide. The method allows recovering metallic value from an arsenic-bearing metallic sulfides ore, by recovery of the calcine comprising the metallic value of the ore.