The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B.sup.I]; (iii) one or more trications [B.sup.III]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B.sup.I] selected from Cu.sup.+, Ag.sup.+ and Au.sup.+; (iii) one or more trications [B.sup.III]; and (iv) one or more halide anions [X].

Described are luminescent components with excellent performance and stability. The luminescent components comprise a first element 1 including first luminescent crystals 11 from the class of perovskite crystals, embedded a first polymer P1 and a second element 2 comprising a second solid polymer composition, said second polymer composition optionally comprising second luminescent crystals 12 embedded in a second polymer P2. Polymers P1 and P2 differ and are further specified in the claims. Also described are methods for manufacturing such components and devices comprising such components.

According to this method, a fatty acid of CnH.sub.2nO.sub.2 (n=5 to 14) is mixed with a plurality of metal sources selected from Zn, In, Sn, Sb, and Al, thereby fatty acid metal salts are obtained, subsequently the fatty acid metal salts are heated at 130° C. to 250° C., and a metal soap that is a precursor is obtained. This precursor is heated at 200° C. to 350° C., and metal oxide primary particles are dispersed in the precursor melt. To this dispersion liquid, a washing solvent having a δP value higher by 5 to 12 than the δP value of the Hansen solubility parameter of the final dispersing solvent is added, thereby the metal oxide primary particles are washed and agglomerated, metal oxide secondary particles are obtained, and then washing is repeated.

According to this method, a fatty acid of CnH.sub.2nO.sub.2 (n=5 to 14) is mixed with a plurality of metal sources selected from Zn, In, Sn, Sb, and Al, thereby fatty acid metal salts are obtained, subsequently the fatty acid metal salts are heated at 130° C. to 250° C., and a metal soap that is a precursor is obtained. This precursor is heated at 200° C. to 350° C., and metal oxide primary particles are dispersed in the precursor melt. To this dispersion liquid, a washing solvent having a δP value higher by 5 to 12 than the δP value of the Hansen solubility parameter of the final dispersing solvent is added, thereby the metal oxide primary particles are washed and agglomerated, metal oxide secondary particles are obtained, and then washing is repeated.

In these metal oxide microparticles, surfaces of microparticles of a metal oxide are modified by a fatty acid having 5 or more and 14 or less carbon atoms and having a branched chain, the metal oxide is metal oxides of a plurality of kinds of metals selected from the group consisting of Zn, In, Sn, and Sb, and an average particle diameter of the microparticles is 80 nm or less. In a dispersion for forming an infrared-shielding film, the metal oxide microparticles are dispersed in a hydrophobic solvent, and a light transmittance in a wavelength range of 800 nm to 1,100 nm is 20% or more and less than 70%.

Described are luminescent components with excellent performance and stability. The luminescent components comprise a first element including first luminescent crystals from the class of perovskite crystals, embedded a first polymer P1 and a second element comprising a second solid polymer composition, said second polymer composition optionally comprising second luminescent crystals embedded in a second polymer P2. Polymers P1 and P2 differ and are further specified in the claims. Also described are methods for manufacturing such components and devices comprising such components.

Porous oxide semiconductor particles have a connected structure in which porous primary particles having an aggregate of crystallites composed of an oxide semiconductor are connected to each other and have a specific surface area of 60 m.sup.2/g or more. The porous oxide semiconductor particles have preferably a pore diameter of 1 nm or more and 20 nm or less. The porous oxide semiconductor particles have preferably a tap density of 0.005 g/cm.sup.3 or more and 1.0 g/cm.sup.3 or less. The oxide semiconductor is preferably SnO.sub.2 or SnO.sub.2 doped with at least one element selected from the group consisting of Nb, Sb, W, Ta, and Al.

Porous oxide semiconductor particles have a connected structure in which porous primary particles having an aggregate of crystallites composed of an oxide semiconductor are connected to each other and have a specific surface area of 60 m.sup.2/g or more. The porous oxide semiconductor particles have preferably a pore diameter of 1 nm or more and 20 nm or less. The porous oxide semiconductor particles have preferably a tap density of 0.005 g/cm.sup.3 or more and 1.0 g/cm.sup.3 or less. The oxide semiconductor is preferably SnO.sub.2 or SnO.sub.2 doped with at least one element selected from the group consisting of Nb, Sb, W, Ta, and Al.

A method of agglomerating nanoparticles to form larger agglomerates is shown. The nanoparticles are mixed with a resin to form a first mixture (803) of agglomerates, having sizes over a range that includes agglomerates considered to be too large, suspended in the resin. A bead milling cylinder (802) produces a second mixture (808) with fewer large agglomerates. A filter (1001) removes the remaining large agglomerates. The resulting mill base is cut with a solvent before deployment.

A method of agglomerating nanoparticles to form larger agglomerates is shown. The nanoparticles are mixed with a resin to form a first mixture (803) of agglomerates, having sizes over a range that includes agglomerates considered to be too large, suspended in the resin. A bead milling cylinder (802) produces a second mixture (808) with fewer large agglomerates. A filter (1001) removes the remaining large agglomerates. The resulting mill base is cut with a solvent before deployment.