Porous oxide semiconductor particles have a connected structure in which porous primary particles having an aggregate of crystallites composed of an oxide semiconductor are connected to each other and have a specific surface area of 60 m.sup.2/g or more. The porous oxide semiconductor particles have preferably a pore diameter of 1 nm or more and 20 nm or less. The porous oxide semiconductor particles have preferably a tap density of 0.005 g/cm.sup.3 or more and 1.0 g/cm.sup.3 or less. The oxide semiconductor is preferably SnO.sub.2 or SnO.sub.2 doped with at least one element selected from the group consisting of Nb, Sb, W, Ta, and Al.

Optical and electronic detection of chemicals, and particularly strong electron-donors, by 2H to 1T phase-based transition metal dichalcogenide (TMD) films, detection apparatus incorporating the TMD films, methods for forming the detection apparatus, and detection systems and methods based on the TMD films are provided. The detection apparatus includes a 2H phase TMD film that transitions to the 1T phase under exposure to strong electron donors. After exposure, the phase state can be determined to assess whether all or a portion of the TMD has undergone a transition from the 2H phase to the 1T phase. Following detection, TMD films in the 1T phase can be converted back to the 2H phase, resulting in a reusable chemical sensor that is selective for strong electron donors.

Optical and electronic detection of chemicals, and particularly strong electron-donors, by 2H to 1T phase-based transition metal dichalcogenide (TMD) films, detection apparatus incorporating the TMD films, methods for forming the detection apparatus, and detection systems and methods based on the TMD films are provided. The detection apparatus includes a 2H phase TMD film that transitions to the 1T phase under exposure to strong electron donors. After exposure, the phase state can be determined to assess whether all or a portion of the TMD has undergone a transition from the 2H phase to the 1T phase. Following detection, TMD films in the 1T phase can be converted back to the 2H phase, resulting in a reusable chemical sensor that is selective for strong electron donors.

A .sup.68Ge/.sup.68Ga generator for a continuous production of a .sup.68Ga daughter nuclide, wherein the .sup.68Ge parent nuclide thereof is specifically adsorbed to an inorganic support material and wherein said .sup.68Ge parent nuclide continuously decays to .sup.68Ga by electron capture at a half-life of 270.82 d, wherein the inorganic support material is at least one oxide of a metal being selected from the group consisting of: Vanadium, Niobium and Tantalum. The use of at least one oxide of a metal being selected from the group consisting of: Vanadium, Niobium and Tantalum as an inorganic support material for the manufacture of a .sup.68Ge/.sup.68Ga generator for pharmaceutical purposes. With the inorganic support material of the present invention, it is possible to load .sup.68Ge/.sup.68Ga generators with up to 8000 MBq of .sup.68Ge (corresponding to 80 g Germanium).

A .sup.68Ge/.sup.68Ga generator for a continuous production of a .sup.68Ga daughter nuclide, wherein the .sup.68Ge parent nuclide thereof is specifically adsorbed to an inorganic support material and wherein said .sup.68Ge parent nuclide continuously decays to .sup.68Ga by electron capture at a half-life of 270.82 d, wherein the inorganic support material is at least one oxide of a metal being selected from the group consisting of: Vanadium, Niobium and Tantalum. The use of at least one oxide of a metal being selected from the group consisting of: Vanadium, Niobium and Tantalum as an inorganic support material for the manufacture of a .sup.68Ge/.sup.68Ga generator for pharmaceutical purposes. With the inorganic support material of the present invention, it is possible to load .sup.68Ge/.sup.68Ga generators with up to 8000 MBq of .sup.68Ge (corresponding to 80 g Germanium).

According to one embodiment, there is provided an active material. The active material includes secondary particles. The secondary particles include first primary particles and second primary particles. The first primary particles include an orthorhombic Na-containing niobium-titanium composite oxide. The second primary particles include at least one selected from the group consisting of a carbon black, a graphite, a titanium nitride, a titanium carbide, a lithium titanate having a spinel structure, a titanium dioxide having an anatase structure, and a titanium dioxide having a rutile structure.

Provided are a dielectric, a capacitor and a semiconductor device that include the dielectric, and a method of preparing the dielectric, the dielectric including: a composition represented by Formula 1; and an oxide including a perovskite type crystal structure having a polar space group or a non-polar space group other than a Pbnm space group:
A.sub.xB.sub.yO.sub.3-<Formula 1> wherein, in Formula 1, A is a monovalent, divalent, or trivalent cation, B is a trivalent, tetravalent, or pentavalent cation, and 0.5x1.5, 0.5y1.5, and 00.5.

Provided are a dielectric, a capacitor and a semiconductor device that include the dielectric, and a method of preparing the dielectric, the dielectric including: a composition represented by Formula 1; and an oxide including a perovskite type crystal structure having a polar space group or a non-polar space group other than a Pbnm space group:
A.sub.xB.sub.yO.sub.3-<Formula 1> wherein, in Formula 1, A is a monovalent, divalent, or trivalent cation, B is a trivalent, tetravalent, or pentavalent cation, and 0.5x1.5, 0.5y1.5, and 00.5.

A thin film structure including a dielectric material layer and an electronic device to which the thin film structure is applied are provided. The dielectric material layer includes a compound expressed by ABO.sub.3, wherein at least one of A and B in ABO.sub.3 is substituted and doped with another atom having a larger atom radius, and ABO.sub.3 becomes A.sub.1xA.sub.xB.sub.1yB.sub.yO.sub.3 (where x>=0, y>=0, at least one of x and y0, a dopant A has an atom radius greater than A and/or a dopant B has an atom radius greater than B) through substitution and doping. A dielectric material property of the dielectric material layer varies according to a type of a substituted and doped dopant and a substitution doping concentration.

A ternary paraelectric having a Cc structure and a method of manufacturing the same are provided. The ternary paraelectric having a Cc structure includes a material having a chemical formula of A.sub.2B.sub.4O.sub.11 that has a monoclinic system, is a space group No. 9, and has a dielectric constant of 150 to 250, wherein A is a Group 1 element, and B is a Group 5 element. A may include one of Na, K, Li and Rb. B may include one of Nb, V, and Ta. The A.sub.2B.sub.4O.sub.11 material may be Na.sub.2Nb.sub.4O.sub.11 in which bandgap energy thereof is greater than that of STO. The A.sub.2B.sub.4O.sub.11 material may have relative density that is greater than 90% or more.