Provided are a dielectric including an oxide represented by Formula 1 below and having a cubic crystal structure, a capacitor including the dielectric, a semiconductor device including the dielectric, and a method of manufacturing the dielectric.
(Rb.sub.xA.sub.1-x)(B.sub.yTa.sub.1-y)O.sub.3-δ  <Formula 1> In Formula 1 above, A is K, Na, Li, Cs, or a combination thereof, B is Nb, V, or a combination thereof, and 0.1≤x≤0.2, 0≤y≤0.2, and 0≤δ≤0.5 are satisfied.

Provided are a dielectric including an oxide represented by Formula 1 below and having a cubic crystal structure, a capacitor including the dielectric, a semiconductor device including the dielectric, and a method of manufacturing the dielectric.
(Rb.sub.xA.sub.1-x)(B.sub.yTa.sub.1-y)O.sub.3-δ  <Formula 1> In Formula 1 above, A is K, Na, Li, Cs, or a combination thereof, B is Nb, V, or a combination thereof, and 0.1≤x≤0.2, 0≤y≤0.2, and 0≤δ≤0.5 are satisfied.

Provided is a novel tantalate dispersion containing no hardly-volatile organic component and having high dispersibility in water, the tantalate dispersion containing tantalum or/and tantalate and amine in water, the tantalate dispersion having an intensity ratio (5.5°/29°) of an intensity at 2θ = 5.5° to an intensity at 2θ = 29° being 1.00 or more in an X-ray diffraction pattern obtained by subjecting a powder obtained by drying the tantalate dispersion to powder X-ray diffraction measurement using CuKα rays.

Provided is a novel tantalate dispersion containing no hardly-volatile organic component and having high dispersibility in water, the tantalate dispersion containing tantalum or/and tantalate and amine in water, the tantalate dispersion having an intensity ratio (5.5°/29°) of an intensity at 2θ = 5.5° to an intensity at 2θ = 29° being 1.00 or more in an X-ray diffraction pattern obtained by subjecting a powder obtained by drying the tantalate dispersion to powder X-ray diffraction measurement using CuKα rays.

A solid electrolyte according to the present disclosure is represented by the following compositional formula (1).
Li.sub.7-x(La.sub.3-zY.sub.z)(Zr.sub.2-xM.sub.x)O.sub.12  (1) In the formula (1), x and z satisfy 0.00<x<1.10, and 0.00<z≤0.15, and M is two or more types of elements selected from the group consisting of Nb, Ta, and Sb.

A modified garnet-type solid electrolyte, includes: a garnet-type solid electrolyte; a modification layer, such that the modification layer is formed on at least one side of the garnet-type solid electrolyte, and possesses a three-dimensional crosslinking structure comprising at least one strongly acidic lithium salt and at least one weakly acidic lithium salt. A method of forming a modified garnet-type solid electrolyte, includes: exposing a garnet-type solid electrolyte in air to form a pre-passivation layer; mixing solutions of strong acid and weakly acidic salt to form a mixed solution; chemically treating at least one side of the garnet-type solid electrolyte with the mixed solution; and forming a modification layer on the at least one side of the garnet-type solid electrolyte.

Disclosed are embodiments of making a high Q ceramic material. The method includes providing Ba.sub.3CoTa.sub.2O.sub.9 and incorporating one of Ba.sub.2MgWO.sub.6, Ba.sub.8LiTa.sub.5WO.sub.24, Ba.sub.8LiTa.sub.5WO.sub.24, Ba.sub.2MgWO.sub.6, Ba.sub.3LaTa.sub.3O.sub.12, Ba.sub.8LiTa.sub.5WO.sub.24, BaLaLiWO.sub.6, Ba.sub.4Ta.sub.2WO.sub.12, Ba.sub.2La.sub.2MgW.sub.2O.sub.12, BaLaLiWO.sub.6, Sr.sub.3LaTa.sub.3O.sub.12, and SrLaTaO.sub.12 into the Ba.sub.3CoTa.sub.2O.sub.9 to form a solid solution having a high Q value of greater than 12000 at about 10 GHz.

Disclosed are embodiments of making a high Q ceramic material. The method includes providing Ba.sub.3NiTa.sub.2O.sub.9 and incorporating one of Ba.sub.2MgWO.sub.6, Ba.sub.8LiTa.sub.5WO.sub.24, Ba.sub.8LiTa.sub.5WO.sub.24, Ba.sub.2MgWO.sub.6, Ba.sub.3LaTa.sub.3O.sub.12, Ba.sub.8LiTa.sub.5WO.sub.24, BaLaLiWO.sub.6, Ba.sub.4Ta.sub.2WO.sub.12, Ba.sub.2La.sub.2MgW.sub.2O.sub.12, BaLaLiWO.sub.6, Sr.sub.3LaTa.sub.3O.sub.12, and SrLaTaO.sub.12 into the Ba.sub.3NiTa.sub.2O.sub.9 to form a solid solution having a high Q value of greater than 12000 at about 10 GHz.

Disclosed are embodiments of a barium magnesium tantalate including additional components to increase the Q value of the material. In some embodiments, complex tungsten oxides and/or hexagonal perovskite crystal structures can be added into the barium magnesium tantalate to provide for advantageous properties. In some embodiments, no tin is used in the formation of the material.

A piezoelectric element includes, in sequence, a substrate, a lower electrode layer, a growth control layer, a piezoelectric layer including, as a main component, a perovskite-type oxide containing lead and an upper electrode layer. The growth control layer includes a metal oxide represented by M.sub.dN.sub.1-dO.sub.e, where M is composed of one or more metal elements capable of substituting in the perovskite-type oxide, 0<d<1, and when the electronegativity is X, 1.41X−1.05≤d≤A1.Math.exp(−X/t1)+y0, where A1=1.68×10.sup.12, t1=0.0306, and y0=0.59958.