An electrical conductor including: a first conductive layer including a plurality of metal nanowires; and a second conductive layer disposed on a surface of the first conductive layer, wherein the second conductive layer includes a plurality of metal oxide nanosheets, wherein in the first conductive layer, a metal nanowire of the plurality of metal nanowires contacts at least two metal oxide nanosheets of the plurality of metal oxide nanosheets, and wherein the plurality of metal oxide nanosheets includes an electrical connection between contacting metal oxide nanosheets.

An electrical conductor including: a first conductive layer including a plurality of metal nanowires; and a second conductive layer disposed on a surface of the first conductive layer, wherein the second conductive layer includes a plurality of metal oxide nanosheets, wherein in the first conductive layer, a metal nanowire of the plurality of metal nanowires contacts at least two metal oxide nanosheets of the plurality of metal oxide nanosheets, and wherein the plurality of metal oxide nanosheets includes an electrical connection between contacting metal oxide nanosheets.

According to one embodiment, nano metal compound particles are provided. The nano metal compound particles have an average particle size of 50 nm or less. The nano metal compound particles have a peak .sub.t of 2.8 eV or less. The peak .sub.t corresponds to a resonant frequency of an oscillator according to a spectroscopic ellipsometry method fitted to a Lorentz model.

The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a halometallate compound comprising: (a) cesium; (b) palladium; and (c) one or more halide anions [X]. The invention also relates to a layer comprising the semiconducting material. The invention further relates to a process for producing a halometallate compound of formula (IV): [A].sub.2[M.sup.IV][X].sub.6, which process uses a H[X] and a compound comprising a sulfoxide group.

A method for recovery of platinum group metals from a spent catalyst is described. The method includes crushing the spent catalyst to obtain a catalyst particulate material including particles having a predetermined grain size. The method includes subjecting the catalyst particulate material to a chlorinating treatment in the reaction zone at a predetermined temperature for a predetermined time period by putting the catalyst particulate material in contact with the chlorine containing gas. The method also includes applying an electromagnetic field to the chlorine-containing gas in the reaction zone to provide ionization of chlorine; thereby to cause a chemical reaction between platinum group metals and chlorine ions and provide a volatile platinum group metal-containing chloride product in the reaction zone. Following this, the volatile platinum group metal-containing chloride product is cooled to convert the product into solid phase platinum group metal-containing materials.

An iridium-based catalyst and method of making the catalyst are described. The catalyst comprises a catalytic material comprising iridium oxide or a mixture of iridium and iridium oxide nanoplates. It may have a BET surface area of at least 50 m.sup.2/g and a pore volume of at least 0.10 cc/g. The nanoplates are less than 50 nm thick. The catalyst is made using organic and inorganic structure directing agents.

A microelectronic device includes a substrate a platinum-containing layer over the substrate. The platinum-containing layer includes a first segment and a second segment adjacent to the first segment, and has a first surface and a second surface opposite the first surface closer to the substrate than the first surface. A first spacing between the first segment and the second segment at the first surface is greater than a second spacing between the first segment and the second segment at the second surface. A width of the first segment along the first surface is less than twice a thickness of the first segment, and the second spacing is less than twice the thickness of the first segment.

A microelectronic device includes a substrate a platinum-containing layer over the substrate. The platinum-containing layer includes a first segment and a second segment adjacent to the first segment, and has a first surface and a second surface opposite the first surface closer to the substrate than the first surface. A first spacing between the first segment and the second segment at the first surface is greater than a second spacing between the first segment and the second segment at the second surface. A width of the first segment along the first surface is less than twice a thickness of the first segment, and the second spacing is less than twice the thickness of the first segment.

A method for recovery of platinum group metals from a spent catalyst is described. The method includes crushing the spent catalyst to obtain a catalyst particulate material including particles having a predetermined grain size. The method includes subjecting the catalyst particulate material to a chlorinating treatment in the reaction zone at a predetermined temperature for a predetermined time period by putting the catalyst particulate material in contact with the chlorine containing gas. The method also includes applying an electromagnetic field to the chlorine-containing gas in the reaction zone to provide ionization of chlorine; thereby to cause a chemical reaction between platinum group metals and chlorine ions and provide a volatile platinum group metal-containing chloride product in the reaction zone. Following this, the volatile platinum group metal-containing chloride product is cooled to convert the product into solid phase platinum group metal-containing materials.

A microelectronic device is formed by forming a platinum-containing layer on a substrate of the microelectronic device. A cap layer is formed on the platinum-containing layer so that an interface between the cap layer and the platinum-containing layer is free of platinum oxide. The cap layer is etchable in an etch solution which also etches the platinum-containing layer. The cap layer may be formed on the platinum-containing layer before platinum oxide forms on the platinum-containing layer. Alternatively, platinum oxide on the platinum-containing layer may be removed before forming the cap layer. The platinum-containing layer may be used to form platinum silicide. The platinum-containing layer may be patterned by forming a hard mask or masking platinum oxide on a portion of the top surface of the platinum-containing layer to block the wet etchant.