An intermediate temperature solid oxide fuel cell (IT-SOFC) includes an anode layer, an electrolyte adjacent to the anode layer, and a cathode layer adjacent to the electrolyte and including a material of formula (I) or (II): Sr.sub.2OsO.sub.4 (I) or Ba.sub.2MO.sub.4 (II), where M is a transition metal or post-transition metal.

Electrocatalysts of formula A.sub.l−x,B.sub.xO.sub.3−δ, wherein A=a metal with an acid-stable oxide and B=a platinum-group-metal (PGM), are provided, as are methods of making the electrocatalysts via rapid plasma oxidation, methods of using the electrocatalysts to catalyze e.g. oxygen evolution reactions (OERs), and devices comprising the electrocatalysts.

A microelectronic device includes a substrate a platinum-containing layer over the substrate. The platinum-containing layer includes a first segment and a second segment adjacent to the first segment, and has a first surface and a second surface opposite the first surface closer to the substrate than the first surface. A first spacing between the first segment and the second segment at the first surface is greater than a second spacing between the first segment and the second segment at the second surface. A width of the first segment along the first surface is less than twice a thickness of the first segment, and the second spacing is less than twice the thickness of the first segment.

A microelectronic device includes a substrate a platinum-containing layer over the substrate. The platinum-containing layer includes a first segment and a second segment adjacent to the first segment, and has a first surface and a second surface opposite the first surface closer to the substrate than the first surface. A first spacing between the first segment and the second segment at the first surface is greater than a second spacing between the first segment and the second segment at the second surface. A width of the first segment along the first surface is less than twice a thickness of the first segment, and the second spacing is less than twice the thickness of the first segment.

Process for the production of high purity iridium(III) chloride hydrate, comprising the steps of: (1) providing at least one material selected from the group consisting of solid H.sub.2[IrCl.sub.6] hydrate, aqueous, at least 1 wt. % H.sub.2[IrCl.sub.6] solution, and solid IrCl.sub.4 hydrate; (2) adding, to the at least one material provided in step (1), at least one monohydroxy compound selected from the group consisting of monohydroxy compounds that are miscible with water at any ratio, primary monoalcohols comprising 4 to 6 carbon atoms, and secondary monoalcohols comprising 4 to 6 carbon atoms at a molar ratio of Ir(IV):monohydroxy compound=1:0.6 to 1000, and allowing to react for 0.2 to 48 hours in a temperature range from 20 to 120° C., followed by removing volatile components from the reaction mixture thus formed.

The invention relates to a porous material in the form of microspheres based on iridium and/or iridium oxide, its preparation process, its use as anodic catalyst in a water electrolyser based on a solid polymer electrolyte, also called PEM water electrolyser (with PEM meaning “Proton Exchange Membrane” or “Polymer Electrolyte Membrane”) or for the manufacture of light-emitting diodes for various electronic devices or for cars, and a PEM water electrolyser comprising such a material as an anode catalyst.

A new and useful oxide semiconductor film with enhanced p-type semiconductor property and the method of manufacturing the oxide semiconductor film are provided. A method of manufacturing an oxide semiconductor film including: generating atomized droplets by atomizing a raw material solution containing a metal of Group 9 of the periodic table and/or a metal of Group 13 of the periodic table and a p-type dopant; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under oxygen atmosphere to form the oxide semiconductor film on the base.

There is provided an oriented body containing platinum group-substituted-6 iron oxide particles typified by Rh-substituted ε-iron oxide or Ru-substituted ε-iron oxide applicable to MAMR, MIMR, or F-MIMR system, and a technique related thereto, containing platinum group element-substituted ε-iron oxide particles in which a part of ε-iron oxide is substituted with at least one element of platinum group elements, as magnetic particles wherein the degree of orientation of the magnetic particles defined by the degree of orientation=SQ (direction of magnetization easy-axes)/SQ (direction of magnetization hard-axes) exceeds 5.0, and a coercive force exceeds 31 kOe.

There is provided an oriented body containing platinum group-substituted-6 iron oxide particles typified by Rh-substituted ε-iron oxide or Ru-substituted ε-iron oxide applicable to MAMR, MIMR, or F-MIMR system, and a technique related thereto, containing platinum group element-substituted ε-iron oxide particles in which a part of ε-iron oxide is substituted with at least one element of platinum group elements, as magnetic particles wherein the degree of orientation of the magnetic particles defined by the degree of orientation=SQ (direction of magnetization easy-axes)/SQ (direction of magnetization hard-axes) exceeds 5.0, and a coercive force exceeds 31 kOe.

A microelectronic device is formed by forming a platinum-containing layer on a substrate of the microelectronic device. A cap layer is formed on the platinum-containing layer so that an interface between the cap layer and the platinum-containing layer is free of platinum oxide. The cap layer is etchable in an etch solution which also etches the platinum-containing layer. The cap layer may be formed on the platinum-containing layer before platinum oxide forms on the platinum-containing layer. Alternatively, platinum oxide on the platinum-containing layer may be removed before forming the cap layer. The platinum-containing layer may be used to form platinum silicide. The platinum-containing layer may be patterned by forming a hard mask or masking platinum oxide on a portion of the top surface of the platinum-containing layer to block the wet etchant.