A silica glass crucible includes a cylindrical side wall portion, a curved bottom portion, and a corner portion that is provided between the side wall portion and the bottom portion and has a higher curvature than a curvature of the bottom portion, in which a first region provided from a crucible inner surface to a middle in a thickness direction, a second region that is provided outside the first region in the thickness direction and has a different strain distribution from the first region, and a third region that is provided outside the second region in the thickness direction and up to the crucible outer surface and has a different strain distribution from the second region, are provided, and internal residual stresses of the first region and the third region are compressive stresses, whereas an internal residual stress of the second region includes a tensile stress.

One aspect relates to a process for the preparation of a quartz glass body. The process includes providing silicon dioxide particles, making a glass melt out of the silicon dioxide particles in an oven and making a quartz glass body out of at least part of the glass melt. The oven has a gas outlet through which gas is removed from the oven, wherein the dew point of the gas on exiting the oven through the gas outlet is less than 0° C. One aspect further relates to a quartz glass body which is obtainable by this process. One aspect further relates to a light guide, an illuminant and a formed body, which are each obtainable by further processing of the quartz glass body.

One aspect relates to a process for the preparation of a quartz glass body. The process includes providing silicon dioxide particles, making a glass melt out of the silicon dioxide particles in an oven and making a quartz glass body out of at least part of the glass melt. The oven has a gas outlet through which gas is removed from the oven, wherein the dew point of the gas on exiting the oven through the gas outlet is less than 0° C. One aspect further relates to a quartz glass body which is obtainable by this process. One aspect further relates to a light guide, an illuminant and a formed body, which are each obtainable by further processing of the quartz glass body.

One aspect relates to a process for the preparation of a quartz glass body including, providing a silicon dioxide granulate obtainable from a silicon dioxide powder, wherein the silicon dioxide granulate has a larger particle size than the silicon dioxide powder, making a 5 glass melt out of silicon dioxide granulate and making a quartz glass body out of at least part of the glass melt. The melting crucible has at least one inlet and at least one outlet. A least part of the glass melt is removed via the melting crucible outlet. One aspect further relates to a quartz glass body which is obtainable by this process. One aspect further relates to a light guide, an illuminant and a formed body, which are each obtainable by further processing 10 of the quartz glass body.

One aspect relates to a process for the preparation of a quartz glass body including, providing a silicon dioxide granulate obtainable from a silicon dioxide powder, wherein the silicon dioxide granulate has a larger particle size than the silicon dioxide powder, making a 5 glass melt out of silicon dioxide granulate and making a quartz glass body out of at least part of the glass melt. The melting crucible has at least one inlet and at least one outlet. A least part of the glass melt is removed via the melting crucible outlet. One aspect further relates to a quartz glass body which is obtainable by this process. One aspect further relates to a light guide, an illuminant and a formed body, which are each obtainable by further processing 10 of the quartz glass body.

A hollow body includes a wall which at least partially surrounds an interior volume of the hollow body. The wall comprises a layer of glass comprising a first glass composition, comprises a base surface, and has a wall surface. The wall surface comprises at least one surface region, in which the base surface is at least partially superimposed by at least one elevated region, and at least one contact region, which extends along a contact range of a height of the hollow body. The at least one elevated region comprises a further glass composition. An exterior diameter of the hollow body has a maximum throughout the contact range. The at least one surface region is at least partially positioned in the at least one contact region.

In a known method for producing a quartz glass component, a crystal formation layer containing a crystallization promoter is produced on a coating surface of a base body of quartz glass. Starting therefrom, to provide a method for producing a quartz glass component of improved thermal strength and long-term stability which displays a comparatively small deformation particularly also in the case of rapid heating-up processes, it is suggested according to one aspect that a porous crystal formation layer containing amorphous SiO.sub.2 particles is produced with a mean thickness in the range of 0.1 to 5 mm, and that a substance which contains cesium and/or rubidium is used as the crystallization promoter.

In a known method for producing a quartz glass component, a crystal formation layer containing a crystallization promoter is produced on a coating surface of a base body of quartz glass. Starting therefrom, to provide a method for producing a quartz glass component of improved thermal strength and long-term stability which displays a comparatively small deformation particularly also in the case of rapid heating-up processes, it is suggested according to one aspect that a porous crystal formation layer containing amorphous SiO.sub.2 particles is produced with a mean thickness in the range of 0.1 to 5 mm, and that a substance which contains cesium and/or rubidium is used as the crystallization promoter.

In an exemplary embodiment, a quartz glass crucible 1 includes: a cylindrical crucible body 10 which has a bottom and is made of quartz glass; and crystallization-accelerator-containing coating films 13A and 13B which are formed on surfaces of the crucible body 10 so as to cause crystallization-accelerator-enriched layers to be formed in the vicinity of the surfaces of the crucible body 10 by heating during a step of pulling up a silicon single crystal by a Czochralski method. The quartz glass crucible is capable of withstanding a single crystal pull-up step undertaken for a very long period of time, such as multi-pulling, and a manufacturing method thereof.

In an exemplary embodiment, a quartz glass crucible 1 includes: a cylindrical crucible body 10 which has a bottom and is made of quartz glass; and crystallization-accelerator-containing coating films 13A and 13B which are formed on surfaces of the crucible body 10 so as to cause crystallization-accelerator-enriched layers to be formed in the vicinity of the surfaces of the crucible body 10 by heating during a step of pulling up a silicon single crystal by a Czochralski method. The quartz glass crucible is capable of withstanding a single crystal pull-up step undertaken for a very long period of time, such as multi-pulling, and a manufacturing method thereof.