A quartz glass crucible 1 includes: a quartz glass crucible body 10 having a cylindrical side wall portion 10a, a curved bottom portion 10b, and a corner portion 10c which has a larger curvature than that of the bottom portion 10b and connects the side wall portion 10a and the bottom portion 10b to each other; and an inner-surface coating film 13A which contains a crystallization accelerator and is formed on an inner surface 10i of the quartz glass crucible body 10, in which the inner surface 10i of the quartz glass crucible body 10 is under compressive stress. The quartz glass crucible has high durability even at a high temperature during a single crystal pull-up step and is capable of reducing a generation ratio of pinholes in a silicon single crystal.

A known method for homogenizing glass includes the following steps: providing a cylindrical blank composed of the glass, having a cylindrical outer surface which extends between a first end face and a second end face, forming a shear zone in the blank by softening a longitudinal section of the blank and subjecting it to a thermal-mechanical intermixing treatment, and moving the shear zone along the longitudinal axis of the blank. To reduce the risk of cracks and fractures during homogenizing, it is proposed that a thermal radiation dissipator is used that at least partially surrounds the shear zone, the lateral dimension of which in the direction of the longitudinal axis of the blank is greater than the shear zone and smaller than the length of the blank, the thermal radiation dissipator being moved synchronously with the shear zone along the longitudinal axis of the blank.

A known method for homogenizing glass includes the following steps: providing a cylindrical blank composed of the glass, having a cylindrical outer surface which extends between a first end face and a second end face, forming a shear zone in the blank by softening a longitudinal section of the blank and subjecting it to a thermal-mechanical intermixing treatment, and moving the shear zone along the longitudinal axis of the blank. To reduce the risk of cracks and fractures during homogenizing, it is proposed that a thermal radiation dissipator is used that at least partially surrounds the shear zone, the lateral dimension of which in the direction of the longitudinal axis of the blank is greater than the shear zone and smaller than the length of the blank, the thermal radiation dissipator being moved synchronously with the shear zone along the longitudinal axis of the blank.

One aspect is a method for producing a hollow porous quartz glass base material. Even when the hollow porous quartz glass base material is produced in large weight and high bulk density, the ease of target extraction is maintained and target extraction is performed stably. The method includes preparing a heat resistant substrate, which has an outer surface on which SiO.sub.2 particles are deposited, the outer surface having a surface roughness in which the maximum height Rz is less than 9 μm and the arithmetic average roughness Ra is less than 1 μm. The heat resistant substrate is rotated and SiO.sub.2 particles are deposited on the outer surface of the heat resistant substrate to form a glass particulate deposit. The heat resistant substrate is extracted from the glass particulate deposit to produce the base material.

A silica-titania glass substrate comprising: (i) a composition comprising 5 weight percent to 10 weight percent TiO.sub.2; (ii) a coefficient of thermal expansion (CTE) at 20° C. in a range from −45 ppb/K to +20 ppb/K; (iii) a crossover temperature (Tzc) in a range from 10° C. to 50° C.; (iv) a slope of CTE at 20° C. in a range from 1.20 ppb/K.sup.2 to 1.75 ppb/K.sup.2; (v) a refractive index variation of less than 140 ppm; and (vi) 600 ppm OH group concentration or greater. The substrate can have a mass of 1 kg or greater and less than 0.05 gas inclusions per cubic inch via a method comprising (i) forming the substrate from soot particles comprising SiO.sub.2 and TiO.sub.2, and (ii) subjecting the substrate to an environment having an elevated temperature and an elevated pressure for a period of time until the substrate comprises less than 0.05 gas inclusions per cubic inch.

The invention relates to a process for preparing a quartz glass body comprising the process steps i.) Providing a silicon dioxide granulate, ii.) Making a glass melt from the silicon dioxide granulate in a melting crucible, and iii.) Making a quartz glass body from at least a part of the glass melt, wherein the melting crucible is comprised in an oven and is made of at least one material comprising tungsten or molybdenum or a combination thereof. The invention further relates to a quartz glass body which can be obtained by this process. Further, the invention relates to a light guide, an illuminant and a formed body, each of which can be obtained by processing the quartz glass body further.

The invention relates to a process for preparing a quartz glass body comprising the process steps i.) Providing a silicon dioxide granulate, ii.) Making a glass melt from the silicon dioxide granulate in a melting crucible, and iii.) Making a quartz glass body from at least a part of the glass melt, wherein the melting crucible is comprised in an oven and is made of at least one material comprising tungsten or molybdenum or a combination thereof. The invention further relates to a quartz glass body which can be obtained by this process. Further, the invention relates to a light guide, an illuminant and a formed body, each of which can be obtained by processing the quartz glass body further.

A quartz glass crucible 1 having a cylindrical side wall portion 10a, a bottom portion 10b, and a corner portion 10c includes a transparent layer 11 as an innermost layer made of quartz glass, a semi-molten layer 13 as an outermost layer made of raw material silica powder solidified in a semi-molten state, and a bubble layer 12 made of quartz glass interposed therebetween. An infrared transmissivity of the corner portion 10c in a state where the semi-molten layer 13 is removed is 25 to 51%, the infrared transmissivity of the corner portion 10c in the state where the semi-molten layer 13 is removed is lower than an infrared transmissivity of the side wall portion 10a, and the infrared transmissivity of the side wall portion 10a in the state where the semi-molten layer 13 is removed is lower than an infrared transmissivity of the bottom portion 10b.

A quartz glass crucible 1 having a cylindrical side wall portion 10a, a bottom portion 10b, and a corner portion 10c includes a transparent layer 11 as an innermost layer made of quartz glass, a semi-molten layer 13 as an outermost layer made of raw material silica powder solidified in a semi-molten state, and a bubble layer 12 made of quartz glass interposed therebetween. An infrared transmissivity of the corner portion 10c in a state where the semi-molten layer 13 is removed is 25 to 51%, the infrared transmissivity of the corner portion 10c in the state where the semi-molten layer 13 is removed is lower than an infrared transmissivity of the side wall portion 10a, and the infrared transmissivity of the side wall portion 10a in the state where the semi-molten layer 13 is removed is lower than an infrared transmissivity of the bottom portion 10b.

A method for the production of synthetic quartz glass using a special cleaning device is provided. The method includes (a) evaporating a production material containing a polymerizable polyalkylsiloxane compound while forming a production material vapor, (b) passing the production material vapor resulting from step (a) through a cleaning device to purify the production material vapor, (c) supplying the purified production material vapor resulting from step (b) to a reaction zone in which the purified production material vapor is converted to SiO.sub.2 particles through oxidation and/or through hydrolysis, (d) depositing the SiO.sub.2 particles resulting from step (c) on a deposition surface, and optionally drying and vitrifying the deposited SiO.sub.2 particles resulting from step (d) to form synthetic quartz glass. The cleaning device includes a bulk of porous silica particles which have a BET specific surface area of at least 2 m.sup.2/g. A device for carrying out the method is also provided.