Described herein are components of a semiconductor processing apparatus, where at least one surface of the component is resistant to a halogen-containing reactive plasma. The component includes a solid structure having a composition containing crystal grains of yttrium oxide, yttrium fluoride or yttrium oxyfluoride and at least one additional compound selected from an oxide, fluoride, or oxyfluoride of neodymium, cerium, samarium, erbium, aluminum, scandium, lanthanum, hafnium, niobium, zirconium, ytterbium, hafnium, and combinations thereof.

Described herein are components of a semiconductor processing apparatus, where at least one surface of the component is resistant to a halogen-containing reactive plasma. The component includes a solid structure having a composition containing crystal grains of yttrium oxide, yttrium fluoride or yttrium oxyfluoride and at least one additional compound selected from an oxide, fluoride, or oxyfluoride of neodymium, cerium, samarium, erbium, aluminum, scandium, lanthanum, hafnium, niobium, zirconium, ytterbium, hafnium, and combinations thereof.

A plurality of insertion holes for inserting one end of each of a plurality of cells is formed on the surface of a support substrate. One end of each of the cells is loosely fitted in the corresponding insertion hole. A joining material is provided so as to fill at least a gap present between the inner wall of the insertion hole and the outer wall of the one end of the cell in each joining portion between each of the insertion holes and one end of the corresponding cell. As the joining material, crystallized glass which includes a plurality of kinds of crystal phases generated when the crystallization of amorphous glass heated up to a crystallization temperature proceeds is used, and a volume reduction ratio (crystallization shrinkage ratio) of the joining material caused by the crystallization at the crystallization temperature is 0.78% or more and 12% or less.

A plurality of insertion holes for inserting one end of each of a plurality of cells is formed on the surface of a support substrate. One end of each of the cells is loosely fitted in the corresponding insertion hole. A joining material is provided so as to fill at least a gap present between the inner wall of the insertion hole and the outer wall of the one end of the cell in each joining portion between each of the insertion holes and one end of the corresponding cell. As the joining material, crystallized glass which includes a plurality of kinds of crystal phases generated when the crystallization of amorphous glass heated up to a crystallization temperature proceeds is used, and a volume reduction ratio (crystallization shrinkage ratio) of the joining material caused by the crystallization at the crystallization temperature is 0.78% or more and 12% or less.

Embodiments of the invention relate to compositions including a yttrium-based fluoride crystal phase, or a yttrium-based oxyfluoride crystal base, or an oxyfluoride amorphous phase, or a combination of those materials. The compositions may be used to form a solid substrate for use as a semiconductor processing apparatus, or the compositions may be used to form a coating which is present upon a surface of substrates having a melting point which is higher than about 1600, substrates such as aluminum oxide, aluminum nitride, quartz, silicon carbide and silicon nitride, by way of example.

The present invention relates to a novel process for the preparation of printable, high-viscosity oxide media, and to the use thereof in the production of solar cells.

The present invention relates to a novel process for the preparation of printable, high-viscosity oxide media, and to the use thereof in the production of solar cells.

A glaze resistant to wax block bonding, a ceramic resistant to wax block bonding and a preparation process thereof are disclosed. The components of the disclosed glaze are made up of potassium feldspar, lithium feldspar, calcium carbonate, talc, kaolin, wollastonite, quartz, alumina and nanopowder, the components being in the following parts by weight: potassium feldspar 30, lithium feldspar 8, calcium carbonate 10, talc 6, kaolin 10, wollastonite 10, quartz 26, alumina 1 and nanopowder 20. Sources of the starting materials required are abundant, the price is low, the production cost is low, and a glaze surface layer resistant to wax block bonding is formed on the surface of the ceramic resistant to wax block bonding produced, thereby effectively solving the problem of the difficulty of removal of molten wax from the burning of candles which has dripped down and hardened on the surface of ceramic.

The invention discloses an anti-corrosion coating with low through-hole ratio for steel rebars. The composition of coating includes 45-70 weight percent feldspar powder, 15-30 weight percent borax, 10-20 weight percent calcium tetraborate, 5-15 weight percent fluorspar, 4-8 weight percent clay, 1-10 weight percent adhesion agent, and 1-1.5 weight percent thickener. This invention also discloses a coating method using above-mentioned anti-corrosion coating. The method includes seven steps: 1. dry mixing, 2. wet mixing, 3. pretreatment, 4. coating, 5. baking, 6. sintering, 7. cooling down at room temperature. The coating of this invention has outstanding anti-corrosion resistance, extremely high toughness, and good durability.

Masking compositions useful for dental restoration, particularly masking compositions used as a coating to mask the unnatural color of milled lithium-silicate glass-ceramic dental restorations in soft states before crystallization cycle, and method of making same. Some embodiments relate to masking compositions comprising at least one glaze powder, at least one opacifier, and at least one colorant. Some embodiments relate to coating, drying, cooling, characterizing, and firing of dental restorations.