A method of forming a textured glass article comprises: submerging an aluminosilicate glass article in an etchant to an upper submerging depth from a surface of the etchant and at a tilting angle, wherein the aluminosilicate glass article comprises a first major surface and a second major surface opposite the first surface, wherein the tilting angle is a smallest angle between a normal to the first major surface and a vertical; holding the aluminosilicate glass article in the etchant for a holding time; and after the holding time, cycling the aluminosilicate glass article in the etchant between the upper submerging depth and a lower submerging depth deeper than the upper submerging depth for a cycling time.

Disclosed is a plasma processing device that provides an object to be treated with plasma treatment. A wafer as an object to be treated, which is attached on the upper surface of adhesive sheet held by a holder frame, is mounted on a stage. In a vacuum chamber that covers the stage therein, plasma is generated, by which the wafer mounted on the stage undergoes plasma treatment. The plasma processing device contains a cover member made of dielectric material. During the plasma treatment on the wafer, the holder frame is covered with a cover member placed at a predetermined position above the stage, at the same time, the wafer is exposed from an opening formed in the center of the cover member.

A surface chemical treatment apparatus provided with: a first conduit having an opening at one end and communicating with a liquid supply means at the other end; a second conduit having at one end an opening that surrounds the opening of the first conduit and communicating with a liquid suction means at the other end; and a moving mechanism for moving the openings of the first and second conduits relative to the solid phase surface, so as to make a surface chemical treatment possible in a fine pattern by allowing the patterning solution to be dispensed through the opening of the first conduit while allowing the solution to be suctioned up together with the surrounding liquid phase or gas phase medium through the opening of the second conduit that surrounds the opening of the first conduit and, thus, preventing seepage of the solution in all directions.

A method of etching a display panel for manufacturing a curved display device comprises the steps of: applying a masking ink in a manner of immersing a non-etched portion of a display panel into an ink reservoir, which contains the masking ink, in order to protrude the non-etched portion from the display panel; curing the masking ink coated on the non-etched portion of the display panel; etching the display panel to reduce the thickness of the display panel by coating an etching liquid onto the display panel on which the masking ink is cured; and removing the masking ink from the etched display panel with a solvent, which dissolves the masking ink.

A method of etching a display panel for manufacturing a curved display device comprises the steps of: applying a masking ink in a manner of immersing a non-etched portion of a display panel into an ink reservoir, which contains the masking ink, in order to protrude the non-etched portion from the display panel; curing the masking ink coated on the non-etched portion of the display panel; etching the display panel to reduce the thickness of the display panel by coating an etching liquid onto the display panel on which the masking ink is cured; and removing the masking ink from the etched display panel with a solvent, which dissolves the masking ink.

Methods of forming vias in substrates having at least one damage region extending from a first surface etching the at least one damage region of the substrate to form a via in the substrate, wherein the via extends through the thickness T of the substrate while the first surface of the substrate is masked. The mask is removed from the first surface of the substrate after etching and upon removal of the mask the first surface of the substrate has a surface roughness (Rq) of about less than 1.0 nm.

An etchant comprises: greater than or equal to 20 wt % and less than or equal to 45 wt % ammonium bifluoride; greater than or equal to 0.25 wt % and less than or equal to 10 wt % of a silicon compound; greater than or equal to 5 wt % and less than or equal to 30 wt % hydrochloric acid; greater than or equal to 25 wt % and less than or equal to 60 wt % water; and greater than or equal to 0.5 wt % and less than or equal to 20 wt % of polyhydric alcohol. The silicon compound comprises silica, silica gel, ammonium hexafluorosilicate, potassium hexafluorosilicate, sodium hexafluorosilicate, magnesium hexafluorosilicate, or a combination thereof.

An etchant comprises: greater than or equal to 20 wt % and less than or equal to 45 wt % ammonium bifluoride; greater than or equal to 0.25 wt % and less than or equal to 10 wt % of a silicon compound; greater than or equal to 5 wt % and less than or equal to 30 wt % hydrochloric acid; greater than or equal to 25 wt % and less than or equal to 60 wt % water; and greater than or equal to 0.5 wt % and less than or equal to 20 wt % of polyhydric alcohol. The silicon compound comprises silica, silica gel, ammonium hexafluorosilicate, potassium hexafluorosilicate, sodium hexafluorosilicate, magnesium hexafluorosilicate, or a combination thereof.

A method of manufacturing a glass substrate having a penetrating structure, the method includes: (1) preparing a glass substrate that has a first surface and a second surface opposite to each other, and includes 3 mol % to 30 mol % of B.sub.2O.sub.3 in terms of oxide; (2) having the glass substrate irradiated with a laser from a first surface side, to form an initial penetrating structure; (3) wet etching the glass substrate having the initial penetrating structure formed; (4) polishing the wet-etched glass substrate from the first surface side, by using an abrasive including acid-soluble abrasive grains; and (5) cleaning the glass substrate with an acid solution.

A method of manufacturing a glass substrate having a penetrating structure, the method includes: (1) preparing a glass substrate that has a first surface and a second surface opposite to each other, and includes 3 mol % to 30 mol % of B.sub.2O.sub.3 in terms of oxide; (2) having the glass substrate irradiated with a laser from a first surface side, to form an initial penetrating structure; (3) wet etching the glass substrate having the initial penetrating structure formed; (4) polishing the wet-etched glass substrate from the first surface side, by using an abrasive including acid-soluble abrasive grains; and (5) cleaning the glass substrate with an acid solution.