The present invention provides a halogenated aniline represented by formula (I) (wherein each of X.sup.1 and X.sup.2 independently represents a chlorine atom, a bromine atom or an iodine atom), a method for producing the halogenated aniline, and other aspects. ##STR00001##

The present invention provides a halogenated aniline represented by formula (I) (wherein each of X.sup.1 and X.sup.2 independently represents a chlorine atom, a bromine atom or an iodine atom), a method for producing the halogenated aniline, and other aspects. ##STR00001##

Embodiments of the present disclosure provide for methods of hydrocarbon functionalization, methods and systems for converting a hydrocarbon into a compound including at least one group ((e.g., hydroxyl group) (e.g., methane to methanol)), functionalized hydrocarbons, and the like.

The present invention pertains to a novel process for the preparation of Fluoroalkylpyrazole- or Bisperfluoroalkypyrazole carboxylates comprising a cyclization of Perfluoroalkyl ketoesters with hydrazines.

The present invention pertains to a novel process for the preparation of Fluoroalkylpyrazole- or Bisperfluoroalkypyrazole carboxylates comprising a cyclization of Perfluoroalkyl ketoesters with hydrazines.

Embodiments of the present disclosure provide for methods of hydrocarbon functionalization, methods and systems for converting a hydrocarbon into a compound including at least one group ((e.g., hydroxyl group) (e.g., methane to methanol)), functionalized hydrocarbons, and the like.

Embodiments of the present disclosure provide for methods of hydrocarbon functionalization, methods and systems for converting a hydrocarbon into a compound including at least one group ((e.g., hydroxyl group) (e.g., methane to methanol)), functionalized hydrocarbons, and the like.

A growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom are disclosed. The growth inhibitor is represented by Chemical Formula 1 [AnBmXo]. In the Chemical Formula 1, A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer from 1 to 15, o is an integer of 1 or more, and m is from 0 to 2n+1. Side reactions are suppressed to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure.

A growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom are disclosed. The growth inhibitor is represented by Chemical Formula 1 [AnBmXo]. In the Chemical Formula 1, A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer from 1 to 15, o is an integer of 1 or more, and m is from 0 to 2n+1. Side reactions are suppressed to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure.

The present invention provides a halogenated aniline represented by formula (I) (wherein each of X.sup.1 and X.sup.2 independently represents a chlorine atom, a bromine atom or an iodine atom), a method for producing the halogenated aniline, and other aspects. ##STR00001##