A process is provided for the preparation of value added chemicals such as ethyl levulinate from a glucose or other sugars, catalyzed by a mixture of a Lewis acid catalyst and a Bronsted acid catalyst.

The present invention relates to a process for the production of oxidized wood products, comprising step a) reacting chips of one or more wood products in a basic solution at a pH between 8 and 14 under an oxygen atmosphere at a pressure of at least 0.1 MPa, or at least 0.9 MPa. A copper catalyst may be used in the process.

A process for the preparation of ethylene glycol and other C.sub.1-C.sub.3 hydroxy compounds comprising the steps of hydrogenating a composition comprising C.sub.1-C.sub.3 oxygenate compounds in the gas phase in the presence of a copper on carbon catalyst.

A process for the preparation of ethylene glycol and other C.sub.1-C.sub.3 hydroxy compounds comprising the steps of hydrogenating a composition comprising C.sub.1-C.sub.3 oxygenate compounds in the gas phase in the presence of a copper on carbon catalyst.

A process is provided for the preparation of value added chemicals such as ethyl levulinate from a glucose or other sugars, catalyzed by a mixture of a Lewis acid catalyst and a Bronsted acid catalyst.

The present invention relates to a growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom, and more particularly, to a growth inhibitor for forming a thin film represented by Chemical Formula 1 below, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom.

AnBmXo  [Chemical Formula 1] wherein A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer from 1 to 15, o is an integer of 1 or more, and m is from 0 to 2n+1.

According to present invention, it is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure.

The present invention relates to a growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom, and more particularly, to a growth inhibitor for forming a thin film represented by Chemical Formula 1 below, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom.

AnBmXo[Chemical Formula 1] wherein A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer from 1 to 15, o is an integer of 1 or more, and m is from 0 to 2n+1.

According to present invention, it is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure.

A process for large scale and energy efficient production of oxygenates from sugar is disclosed in which a sugar feedstock is introduced into a thermolytic fragmentation reactor including a fluidized stream of heat carrying particles. The heat carrying particles may be separated from the fluidized stream prior to cooling the fragmentation product and may be directed to a reheater to reheat the particles and recirculate the heated particles to the fragmentation reactor.

A process for large scale and energy efficient production of oxygenates from sugar is disclosed in which a sugar feedstock is introduced into a thermolytic fragmentation reactor including a fluidized stream of heat carrying particles. The heat carrying particles may be separated from the fluidized stream prior to cooling the fragmentation product and may be directed to a reheater to reheat the particles and recirculate the heated particles to the fragmentation reactor.

Hierarchically porous ZSM-5 zeolites, having macropores, mesopores, and micropores are formed using a solid-state crystallization process. An aluminosilicate nanogel prepared with precursors, solvent, and a structure-directing agent is provided. The solvent is evaporated from the aluminosilicate nanogel at room temperature. The dried aluminosilicate nanogel is then heated to promote crystallization. The crystallized zeolites are calcined to remove the structure-directing agent.