Patent classifications
C07C27/00
GROWTH INHIBITOR FOR FORMING THIN FILM, METHOD FOR FORMING THIN FILM AND SEMICONDUCTOR SUBSTRATE PREPARED THEREFROM
A growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom are disclosed. The growth inhibitor is represented by Chemical Formula 1 [AnBmXo]. In the Chemical Formula 1, A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer from 1 to 15, o is an integer of 1 or more, and m is from 0 to 2n+1. Side reactions are suppressed to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure.
Efficient oxidative coupling of methane processes and systems
The present disclosure provides oxidative coupling of methane (OCM) systems for small scale and world scale production of olefins. An OCM system may comprise an OCM subsystem that generates a product stream comprising C.sub.2+ compounds and non-C.sub.2+ impurities from methane and an oxidizing agent. At least one separations subsystem downstream of, and fluidically coupled to, the OCM subsystem can be used to separate the non-C.sub.2+ impurities from the C.sub.2+ compounds. A methanation subsystem downstream and fluidically coupled to the OCM subsystem can be used to react H.sub.2 with CO and/or CO.sub.2 in the non-C.sub.2+ impurities to generate methane, which can be recycled to the OCM subsystem. The OCM system can be integrated in a non-OCM system, such as a natural gas liquids system or an existing ethylene cracker.
Method and apparatus for providing oxygenated hydrocarbons
A method includes a step of supplying a first heated hydrocarbon-containing gas stream to a reactor. An oxygen-containing gas stream is separately supplied to the reactor to partially oxidize the hydrocarbon-containing gas stream. The oxygen-containing gas is optionally prepared by passing air through one or more membranes to increase the oxygen content. One or more of the desired liquid oxygenated hydrocarbons are condensed and/or separated from the resulting product stream. Non-hydrocarbon gases are selectively removed from the product stream to enrich the gaseous hydrocarbon fraction using a scrubber and/or a membrane. The remaining gaseous hydrocarbon products from the product stream are mixed with a fresh hydrocarbon-containing gas stream after one cycle of the reaction. Characteristically, the process uses at least one membrane to increase oxygen content of the oxygen containing gas and/or to remove non-hydrocarbon gases from the product stream as set forth above.
Method of depolymerising phenolic polymers
The invention provides a method for depolymerising a phenolic polymer, the method comprising reacting the phenolic polymer with dimethylsulphoxide (DMSO) and a hydrogen halide. The phenolic polymer may be selected from the group consisting of lignin and derivatives thereof. The hydrogen halide may be HBr. The quantity of hydrogen halide per gram of phenolic polymer may be from 30 mmoles to 70 mmoles. The quantity of DMSO per gram of phenolic polymer may be from 0.1 mole to 1 mole. The reaction may be performed at a temperature of from 100 to 120 C. The reaction may be carried out for between 10 h and 14 h. The product of the reaction may comprise vanillin.
Method of depolymerising phenolic polymers
The invention provides a method for depolymerising a phenolic polymer, the method comprising reacting the phenolic polymer with dimethylsulphoxide (DMSO) and a hydrogen halide. The phenolic polymer may be selected from the group consisting of lignin and derivatives thereof. The hydrogen halide may be HBr. The quantity of hydrogen halide per gram of phenolic polymer may be from 30 mmoles to 70 mmoles. The quantity of DMSO per gram of phenolic polymer may be from 0.1 mole to 1 mole. The reaction may be performed at a temperature of from 100 to 120 C. The reaction may be carried out for between 10 h and 14 h. The product of the reaction may comprise vanillin.
Process for depolymerization of lignin
The present invention discloses a process for depolymerization of lignin to yield substituted phenolic monomers using Brnsted ionic liquid as catalyst under mild reaction conditions to obtain an overall yield of monomers up to 97%.
Process for depolymerization of lignin
The present invention discloses a process for depolymerization of lignin to yield substituted phenolic monomers using Brnsted ionic liquid as catalyst under mild reaction conditions to obtain an overall yield of monomers up to 97%.
Growth inhibitor for forming thin film, method for forming thin film and semiconductor substrate prepared therefrom
Disclosed are a growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom. The growth inhibitor for forming a thin film is represented by Chemical Formula 1: AnBmXo [Chemical Formula 1]. A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer from 1 to 15, o is an integer of 1 or more, and m is from 0 to 2n+1. It is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure.
Growth inhibitor for forming thin film, method for forming thin film and semiconductor substrate prepared therefrom
Disclosed are a growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom. The growth inhibitor for forming a thin film is represented by Chemical Formula 1: AnBmXo [Chemical Formula 1]. A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer from 1 to 15, o is an integer of 1 or more, and m is from 0 to 2n+1. It is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure.
DEPOLYMERIZATION OF LIGNIN USING A SUPPORTED METAL CATALYST
The present invention provides for a method for depolymerizing a lignin, said method comprising: (a) providing a metal catalyst, and (b) contacting a lignin to the metal catalyst, such that the metal catalyst depolymerizes at least a portion of the lignin into one or more lignin monomers.