Aspects of the disclosure includes methods for preparing an amorphous solid composition of a fatty acid metal salt. In practicing the subject methods according to certain embodiments, a succinylated 3-(fatty acid amido)-2-hydroxy-1-(protected hydroxy)-propane organic salt is contacted with a metal base to produce a succinylated 3-(fatty acid amido)-2-hydroxy-1-(protected hydroxy)-propane metal salt; and the succinylated 3-(fatty acid amido)-2-hydroxy-1-(protected hydroxy)-propane metal salt is precipitated in a solvent to produce an amorphous solid succinylated 3-(fatty acid amido)-2-hydroxy-1-(protected hydroxy)-propane metal salt composition. An amorphous solid succinylated 3-(fatty acid amido)-2-hydroxy-1-(protected hydroxy)-propane lithium salt is also provided.

The present invention is directed to a nitrogen containing surfactant composition comprising at least one nitrogen containing surfactant of structure (h) or structure (i). The nitrogen containing surfactant of structure (h) is as shown below: Structure (h). The nitrogen containing surfactant of structure (i) is as shown below: Structure (i). The present invention is also directed to an agricultural composition comprising at least one agrochemical and at least one nitrogen containing surfactant composition of the present invention. ##STR00001##

The present invention is directed to a nitrogen containing surfactant composition comprising at least one nitrogen containing surfactant of structure (h) or structure (i). The nitrogen containing surfactant of structure (h) is as shown below: Structure (h). The nitrogen containing surfactant of structure (i) is as shown below: Structure (i). The present invention is also directed to an agricultural composition comprising at least one agrochemical and at least one nitrogen containing surfactant composition of the present invention. ##STR00001##

A phosphonium compound, a method of preparing the same, an epoxy resin composition including the same, and a semiconductor device encapsulated with the same, the compound being represented by Formula 1: ##STR00001##

A method for forming a graphene quantum dot product includes adding an organic starting material to a vessel and heating the organic starting material to a temperature within 20 C. of the organic starting material's boiling temperature for a time no longer than ten minutes to form graphene quantum dots. A method for sensing a graphene quantum dot includes forming a graphene quantum dot, exciting the graphene quantum dot with light having a first wavelength, measuring light emitted by the excited graphene quantum dot at a second wavelength different from the first wavelength. A graphene quantum dot includes carbon atoms and nitrogen atoms where the nitrogen atoms are present within the graphene quantum dot at a level between 6.0% and 11.0% of a level of carbon atoms present in the graphene quantum dot.

A method for forming a graphene quantum dot product includes adding an organic starting material to a vessel and heating the organic starting material to a temperature within 20 C. of the organic starting material's boiling temperature for a time no longer than ten minutes to form graphene quantum dots. A method for sensing a graphene quantum dot includes forming a graphene quantum dot, exciting the graphene quantum dot with light having a first wavelength, measuring light emitted by the excited graphene quantum dot at a second wavelength different from the first wavelength. A graphene quantum dot includes carbon atoms and nitrogen atoms where the nitrogen atoms are present within the graphene quantum dot at a level between 6.0% and 11.0% of a level of carbon atoms present in the graphene quantum dot.