Patent classifications
C07F5/00
SUBSTRATE PROCESSING APPARATUS, RAW MATERIAL CARTRIDGE, SUBSTRATE PROCESSING METHOD, AND RAW MATERIAL CARTRIDGE MANUFACTURING METHOD
A substrate processing apparatus includes: a chamber; and a processing gas supply unit connected to the chamber via a processing gas supply flow path and configured to supply a processing gas. The processing gas supply unit includes a raw material cartridge that includes a raw material tank that accommodates a porous member containing a metal-organic framework adsorbed with gas molecules of a raw material of the processing gas; a main body configured to communicate the raw material tank and the processing gas supply flow path with each other when the raw material cartridge is attached; and a desorption mechanism configured to desorb the gas molecules of the raw material of the processing gas and allow the gas molecules to flow out as the processing gas to the processing gas supply flow path while the raw material cartridge is attached to the main body.
COMPOUND, THIN-FILM FORMING RAW MATERIAL, AND METHOD OF PRODUCING THIN-FILM
Provided is a compound represented by the following general formula (1) or (2):
##STR00001##
where R.sup.1 to R.sup.4 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or the like, R.sup.5 and R.sup.6 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, M.sup.1 represents a gallium atom or an indium atom;
##STR00002##
where R.sup.7 to R.sup.10 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or the like, R.sup.11 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and M.sup.2 represents a gallium atom or an indium atom.
COMPOUND, THIN-FILM FORMING RAW MATERIAL, AND METHOD OF PRODUCING THIN-FILM
Provided is a compound represented by the following general formula (1) or (2):
##STR00001##
where R.sup.1 to R.sup.4 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or the like, R.sup.5 and R.sup.6 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, M.sup.1 represents a gallium atom or an indium atom;
##STR00002##
where R.sup.7 to R.sup.10 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or the like, R.sup.11 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and M.sup.2 represents a gallium atom or an indium atom.
NOVEL GADOLINIUM-BASED COMPOUND, METHOD FOR PRODUCING SAME, AND MRI CONTRAST AGENT CONTAINING SAME
The present invention relates to a gadolinium-based compound of a Chemical Formula 1, a method for producing the same, and an MRI contrast agent containing the same. [Chemical Formula 1] [structural formula] In chemical formula 1, A and Linker represent linking groups, and RB represents a Rose Bengal-derived part.
NOVEL GADOLINIUM-BASED COMPOUND, METHOD FOR PRODUCING SAME, AND MRI CONTRAST AGENT CONTAINING SAME
The present invention relates to a gadolinium-based compound of a Chemical Formula 1, a method for producing the same, and an MRI contrast agent containing the same. [Chemical Formula 1] [structural formula] In chemical formula 1, A and Linker represent linking groups, and RB represents a Rose Bengal-derived part.
Scandium precursor for SC2O3 or SC2S3 atomic layer deposition
Described are precursor compounds and methods for atomic layer deposition of films containing scandium(III) oxide or scandium(III) sulfide. Such films may be utilized as dielectric layers in semiconductor manufacturing processes, particular for depositing dielectric films and the use of such films in various electronic devices.
Photochemical separations and compositions
Provided herein are photochemical separations. The methods herein can include exposing a first metal complex and a second metal complex to light to facilitate an irreversible chemical reaction to form a modified first metal complex. The modified first metal complex then may be separated from the second metal complex. Compositions also are provided.
Photochemical separations and compositions
Provided herein are photochemical separations. The methods herein can include exposing a first metal complex and a second metal complex to light to facilitate an irreversible chemical reaction to form a modified first metal complex. The modified first metal complex then may be separated from the second metal complex. Compositions also are provided.
SCANDIUM PRECURSOR FOR SC2O3 OR SC2S3 ATOMIC LAYER DEPOSITION
Described are precursor compounds and methods for atomic layer deposition of films containing scandium(III) oxide or scandium(III) sulfide. Such films may be utilized as dielectric layers in semiconductor manufacturing processes, particular for depositing dielectric films and the use of such films in various electronic devices.
COLORANT FOR HEAT TRANSFER FLUID, AND COMPOSITION COMPRISING SAME
The present invention relates to a colorant for a heat transfer fluid and a composition comprising same.