The present disclosure relates to poly(alpha-olefin)s and methods for making poly(alpha-olefin)s. A poly(alpha-olefin) may include about 95 wt % or greater C.sub.10-C.sub.18 alpha-olefin content and have a weight average molecular weight of from about 1,000,000 g/mol to about 10,000,000 g/mol. A method for forming a poly(alpha-olefin) may include introducing one or more C.sub.10-C.sub.18 alpha-olefins to a catalyst system comprising a catalyst compound and an activator. The method may include obtaining poly(alpha-olefin)s comprising about 95 wt % or greater C.sub.10-C.sub.18 alpha-olefin content and having a weight average molecular weight of from about 1,000,000 g/mol to about 10,000,000 g/mol.

This invention relates to metal organic framework (MOF) compositions, methods of preparing them and methods of using them. The MOF compositions are characterized in that at least a portion of the linker molecule is an amino containing organic linker. The MOF also has a crystal size of greater than 1 μm and has been treated with an acid wash to provide a MOF in which at least 55% of the amino groups are activated amino groups of the form —NH.sub.2. The MOF compositions are useful in adsorbing various contaminants from various gas stream. One specific example is adsorbing NO.sub.2 from an air stream.

This invention relates to modified MOF materials, methods of preparing them and processes using them. A modified MOF of the invention is modified by impregnating a MOF with an inorganic metal salt. The starting MOF contains at least one linker or ligand which contains an aryl amino group as part of its structure. These modified MOFs are able to adsorb either basic or acidic toxic industrial compounds (TIC). The modified MOFs can be used to remove TICs from various gaseous streams such as air.

This invention relates to modified MOF materials, methods of preparing them and processes using them. A modified MOF of the invention is modified by impregnating a MOF with an inorganic metal salt. The starting MOF contains at least one linker or ligand which contains an aryl amino group as part of its structure. These modified MOFs are able to adsorb either basic or acidic toxic industrial compounds (TIC). The modified MOFs can be used to remove TICs from various gaseous streams such as air.

The invention provides a method of preparing a .sup.89Zr-oxine complex of the formula ##STR00001##
The invention also provides a method of labeling a cell with the .sup.89Zr-oxine complex and a method for detecting a biological cell in a subject comprising administering the .sup.89Zr-oxine complex to the subject.

A perovskite material including an organic-inorganic perovskite structure of formula (I), A.sub.nMX.sub.3 (I), n being the number of cation A and an integer >4, A being a monovalent cation selected from inorganic cations Ai and/or from organic cations Ao, M being a divalent metal cation or a combination thereof, X being a halide and/or pseudohalide anion or a combination thereof, wherein at least one cation A is selected from organic cations Ao, the inorganic cations Ai are independently selected from Li.sup.+, Na.sup.+, K.sup.+, Rb.sup.+, Cs.sup.+, or Tl.sup.+ and the organic cations Ao are independently selected from ammonium (NH.sub.4.sup.+), methyl ammonium (MA) (CH.sub.3NH.sub.3.sup.+), ethyl ammonium (CH.sub.3CH.sub.2NH.sub.3).sup.+, formamidinium (FA) (CH(NH.sub.2).sub.2.sup.+), methylformamidinium (CH.sub.3C(NH.sub.2).sub.2.sup.+), guanidium (C((NH).sub.2).sub.3.sup.+), tetramethylammonium ((CH.sub.3).sub.4N.sup.+), dimethylammonium ((CH.sub.3).sub.2NH.sub.2.sup.+) or trimethylammonium ((CH.sub.3).sub.3NH.sup.+).

A method for forming a Group IV transition metal containing film comprises a) exposing a substrate to a vapor of a Group IV transition metal containing film forming composition; b) exposing the substrate to a co-reactant; and c) repeating the steps of a) and b) until a desired thickness of the Group IV transition metal containing film is deposited on the substrate using a vapor deposition process,

A method for forming a Group IV transition metal containing film comprises a) exposing a substrate to a vapor of a Group IV transition metal containing film forming composition; b) exposing the substrate to a co-reactant; and c) repeating the steps of a) and b) until a desired thickness of the Group IV transition metal containing film is deposited on the substrate using a vapor deposition process,

The present specification provides an organic group 4 metal precursor compound and a method for forming a thin film using the same.

The present specification provides an organic group 4 metal precursor compound and a method for forming a thin film using the same.