A light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an interlayer between the first electrode and the second electrode and including an emission layer, wherein the interlayer includes a heterocyclic compound of Formula 1:

A.sub.1B.sub.1].sub.n1  Formula 1

wherein, in Formula 1, the variables are defined herein.

Chromium (III) Complexes of the following Schiff base ligands derived from N-[4-methyl phenyl-3-oxo-3-[2-1H-Pyrrole-3yl hyrazinyl] propanamide and cinnamaldehyde were synthesized. Schiff base Ligands and their coordinated chromium (III) complexes were characterized using elemental analysis, UV-Vis, FT-IR, conductance data, TEM, XRD, and thermogravimetric analysis. In the UV-VIS study, a bathochromic shift of approximately 80 nm indicates the formation of chromium(III) complex by more than one coordinating site. The FT-IR spectra of complexes clearly show that the formation of Cr—N bond between ligand and Cr(III) ion at 1680 cm.sup.−1, while the TGA analysis shows the presence of six coordinated water molecules in the complex. Based on the physicochemical analysis, the following empirical formula has been assigned to chromium (III) complexes: [Cr(C.sub.29H.sub.33N.sub.17S.sub.2)]Cl.sub.3.6H.sub.2O and [Cr(C.sub.35H.sub.36Cl.sub.2N.sub.6O.sub.4)]Cl.sub.3.6H2O. Moreover, the antioxidant activity of complexes was evaluated by using 2,2′-diphenyl-1-picrylhydrazyl(DPPH) free radical assay which showed that the complexes have a higher antioxidant activity than that of Schiff base ligands.

Chromium (III) Complexes of the following Schiff base ligands derived from N-[4-methyl phenyl-3-oxo-3-[2-1H-Pyrrole-3yl hyrazinyl] propanamide and cinnamaldehyde were synthesized. Schiff base Ligands and their coordinated chromium (III) complexes were characterized using elemental analysis, UV-Vis, FT-IR, conductance data, TEM, XRD, and thermogravimetric analysis. In the UV-VIS study, a bathochromic shift of approximately 80 nm indicates the formation of chromium(III) complex by more than one coordinating site. The FT-IR spectra of complexes clearly show that the formation of Cr—N bond between ligand and Cr(III) ion at 1680 cm.sup.−1, while the TGA analysis shows the presence of six coordinated water molecules in the complex. Based on the physicochemical analysis, the following empirical formula has been assigned to chromium (III) complexes: [Cr(C.sub.29H.sub.33N.sub.17S.sub.2)]Cl.sub.3.6H.sub.2O and [Cr(C.sub.35H.sub.36Cl.sub.2N.sub.6O.sub.4)]Cl.sub.3.6H2O. Moreover, the antioxidant activity of complexes was evaluated by using 2,2′-diphenyl-1-picrylhydrazyl(DPPH) free radical assay which showed that the complexes have a higher antioxidant activity than that of Schiff base ligands.

Molybdenum(0) coordination complexes comprising at least one cycloheptatriene ligand and optionally one or more neutral ligands which coordinate to the metal center by carbon, nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

Molybdenum(0) coordination complexes comprising at least one cycloheptatriene ligand and optionally one or more neutral ligands which coordinate to the metal center by carbon, nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

The invention provides a facile process for preparing various Group VI precursor compounds, set forth below as Formula (I), useful in the vapor deposition of certain Group VI metals onto solid substrates, especially microelectronic semiconductor device substrates. Also provided is a process for the preparation of such precursor compounds. Additionally, the invention provides a method for vapor deposition of Group VI metals onto microelectronic device substrates utilizing the precursor compounds of the invention.

A method for preparing isotopologues and/or stereoisotopomers of cyclic and heterocyclic alkenes and dienes is described. The method provides regio- and/or stereospecific addition of hydrogen, deuterium, tritium and a variety of other substituents to arenes, heteroarenes, and alicyclic compounds that have multiple carbon-carbon double bonds, thereby providing discrete isotopologues and stereoisotopomers of cyclic and heterocyclic alkenes and dienes with high isotopic purity and in high enantiomeric excess. Also described are isotopologues and stereoisotopomers of cyclic and heterocyclic alkenes and dienes, such as isotopologues and stereoisotopomers of cyclohexene and tetrahydropyridine, as well as products thereof, such as isotopologues and stereoisotopomers of piperidines and piperidine-containing compounds, such as methylphenidate. In addition, a method of determining the absolute configuration of stereoisotopomers of cyclohexenes is described.

A method for preparing isotopologues and/or stereoisotopomers of cyclic and heterocyclic alkenes and dienes is described. The method provides regio- and/or stereospecific addition of hydrogen, deuterium, tritium and a variety of other substituents to arenes, heteroarenes, and alicyclic compounds that have multiple carbon-carbon double bonds, thereby providing discrete isotopologues and stereoisotopomers of cyclic and heterocyclic alkenes and dienes with high isotopic purity and in high enantiomeric excess. Also described are isotopologues and stereoisotopomers of cyclic and heterocyclic alkenes and dienes, such as isotopologues and stereoisotopomers of cyclohexene and tetrahydropyridine, as well as products thereof, such as isotopologues and stereoisotopomers of piperidines and piperidine-containing compounds, such as methylphenidate. In addition, a method of determining the absolute configuration of stereoisotopomers of cyclohexenes is described.

The present disclosure relates to a method for producing a metal carbide, where the method includes thermally treating a molecular precursor in an oxygen-free environment, such that the treating produces the metal carbide and the molecular precursor includes ##STR00001##
where M is the metal of the metal carbide, N* includes nitrogen or a nitrogen-containing functional group, and x is between zero and six, inclusively.

The present disclosure relates to an optoelectronic device including a heterojunction of a halide perovskite single crystal and a two-dimensional semiconductor material layer and a method of manufacturing the same.