Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR.sup.1R.sup.2R.sup.3).sub.2 are preferably used, wherein R.sup.1, R.sup.2, and R.sup.3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.

The present invention relates to a process for obtaining materials with Metal Organic atomic structure and called MOF (MOF: Metal Organic Framework) type MIL-101 (Cr) and MIL-101-Cr-M.sup.X+ (MIL: Material from Institute Lavoisier), where M.sup.X+ can be any metal cation, such as Mg.sup.2+, Al.sup.3+ or Ti.sup.4+, using for its synthesis metal epoxides and alkoxides, avoiding the use of hydrofluoric acid (HF) or bases as synthesis controlling agents. The process of the present invention for the preparation of materials MOF MIL-101 (Cr) and MOF MIL-101-Cr-M.sup.X+ where M.sup.X+ can be any metal cation, such as Mg.sup.2+, Al.sup.3+ or Ti.sup.4+, consisting of: a) Synthesizing MOF MIL-101 (Cr) with epoxides, or Synthesizing MOF MIL-101-Cr-M.sup.X+ with metal alkoxides; and b) Purifying the synthesized MOF. in order to obtain 100% pure materials, with a controlled mesoporosity associated with a hysteresis P/P.sub.0 from 0.7 to 0.99, BET surface area from 2,500 to 3,500 m.sup.2/g, pore volume from 1.1 to 2.2 cm.sup.3/g, and pore diameter from 15 to 55 nm.

A tetraanionic OCO pincer ligand metal-oxo-alkylidene complex is prepared from a trianionic pincer ligand supported metal-alkylidyne. The metal can be tungsten or other group 5-7 transition metal. The tetraanionic pincer ligand metal-oxo-alkylidene complex, a trianionic OCO pincer ligand metal complex, or a trianionic ONO pincer ligand metal complex can be used to polymerize cycloalkenes. The poly(cycloalkene)s are predominantly cis-alkene macrocyclics.

A tetraanionic OCO pincer ligand metal-oxo-alkylidene complex is prepared from a trianionic pincer ligand supported metal-alkylidyne. The metal can be tungsten or other group 5-7 transition metal. The tetraanionic pincer ligand metal-oxo-alkylidene complex, a trianionic OCO pincer ligand metal complex, or a trianionic ONO pincer ligand metal complex can be used to polymerize cycloalkenes. The poly(cycloalkene)s are predominantly cis-alkene macrocyclics.

The invention relates to the development of drugs intended for the prophylaxis and/or treatment of viral diseases caused, in particular, by herpes viruses. What are proposed are complex compounds of germanium having the general structural formula:
Ge.sub.x[AD][CA].sub.y[AA].sub.2   (1), where AD is a derivative of a nitrogenous base of the purine series that has antiviral activity and can be selected from guanine derivatives, such as acyclovir, valacyclovir, gancyclovir and pencyclovir, or from adenine derivatives, such as vidarabine; CA is a hydroxycarboxylic acid which can be selected from acids such as (but not limited to) citric acid, lactic acid and malic acid; AA is an amino acid which can be selected from various a-amino acids, such as arginine, gylcine, lysine and threonine, and where x=1-2, y=2-4 and z=0-2. Complex compounds of germanium have a high level of antiviral and immune-stimulating activity and are readily soluble in water. The above mentioned compounds are produced by producing an aqueous suspension of germanium dioxide, adding a hydroxycarboxylic acid, a derivative of a nitrogenous base of the purine series and, optionally, but preferably, an amino acid thereto, heating the mixture produced at a temperature of 40-100° C. for 3-14 hours while stirring and removing the water from the solution, thus producing a complex compound of germanium.

Disclosed are to metallocyclopropene complexes, methods of making same, methods for ring expansion metathesis polymerization, and polymers prepared by the methods for ring expansion metathesis polymerization.

Disclosed are to metallocyclopropene complexes, methods of making same, methods for ring expansion metathesis polymerization, and polymers prepared by the methods for ring expansion metathesis polymerization.

The invention relates to the use of compounds of formulae (I) and/or (II) as colorless IR absorbers wherein M is Ni, Pd, Pt, Au, Ir, Fe, Zn, W, Cu, Mo, In, Mn, Co, Mg, V, Cr or Ti, X.sub.1, X.sub.2 and X.sub.3 are each independently of the others sulfur or oxygen, R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5 and R.sub.6 are each independently of the others hydrogen, NR.sub.7R.sub.8, unsubstituted or substituted C.sub.1-C.sub.18alkyl, C.sub.1-C.sub.18 alkyl wherein the alkylene chain is interrupted with oxygen, unsubstituted or substituted C.sub.1-C.sub.18alkenyl, unsubstituted or substituted aryl, unsubstituted or substituted arylalkyl or unsubstituted or substituted heteroarylalkyl, R.sub.7 and R.sub.8, each independently of the other, being unsubstituted or substituted C.sub.1-C.sub.18alkyl, unsubstituted or substituted aryl, unsubstituted or substituted arylalkyl or unsubstituted or substituted heteroarylalkyl, a further IR absorber optionally being added to the compounds of formulae (I) and (II). The invention relates also to novel dithiolene compounds of formulae (I) and (II) wherein X.sub.1 is oxygen and X.sub.2 and X.sub.3 are oxygen or sulfur. The invention relates furthermore to novel dithiolene compounds of formulae (I) and (II) wherein R.sub.1 to R.sub.6 are NR.sub.7R.sub.8. ##STR00001##

The invention relates to the use of compounds of formulae (I) and/or (II) as colorless IR absorbers wherein M is Ni, Pd, Pt, Au, Ir, Fe, Zn, W, Cu, Mo, In, Mn, Co, Mg, V, Cr or Ti, X.sub.1, X.sub.2 and X.sub.3 are each independently of the others sulfur or oxygen, R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5 and R.sub.6 are each independently of the others hydrogen, NR.sub.7R.sub.8, unsubstituted or substituted C.sub.1-C.sub.18alkyl, C.sub.1-C.sub.18 alkyl wherein the alkylene chain is interrupted with oxygen, unsubstituted or substituted C.sub.1-C.sub.18alkenyl, unsubstituted or substituted aryl, unsubstituted or substituted arylalkyl or unsubstituted or substituted heteroarylalkyl, R.sub.7 and R.sub.8, each independently of the other, being unsubstituted or substituted C.sub.1-C.sub.18alkyl, unsubstituted or substituted aryl, unsubstituted or substituted arylalkyl or unsubstituted or substituted heteroarylalkyl, a further IR absorber optionally being added to the compounds of formulae (I) and (II). The invention relates also to novel dithiolene compounds of formulae (I) and (II) wherein X.sub.1 is oxygen and X.sub.2 and X.sub.3 are oxygen or sulfur. The invention relates furthermore to novel dithiolene compounds of formulae (I) and (II) wherein R.sub.1 to R.sub.6 are NR.sub.7R.sub.8. ##STR00001##

The present disclosure relates to improved processes for the preparation of metal hydrides. The present disclosure also relates to metal hydrides, e.g., metal hydrides prepared by the processes described herein, that exhibit enhanced hydrogen storage capacity when used as hydrogen storage systems.