A heterophasic polypropylene copolymer having an MFR2 of 0.05 to 20 g/10 min (ISO 1133 at 230° C. with a loading of 2.16 kg) and a melting point (Tm) of 156 to 164° C. (measured by DSC according to ISO 11357) wherein the heterophasic polypropylene copolymer comprises at least the following components: (A) 55.0 to 95.0 wt % of a crystalline fraction (CF) having a comonomer content of 0 to 3.0 wt %; and (B) 5.0 to 45.0 wt % of a soluble fraction (SF) having a comonomer content of 12 to 45 wt %; wherein the intrinsic viscosity (IV) (in decalin at 135° C.) of the soluble fraction (SF) is 2.5 to 11 dl/g, and wherein the amount of crystalline fraction (CF) and the amount of soluble fraction (SF) are determined in 1,2,4-trichlorobenzene at 40° C.

The present invention describes a process for preparing isopropylidene bis(cyclopentadienyl)zirconium dichloride comprising the steps of: (a) reacting acetone and cyclopentadiene in the presence of sodium methoxide or sodium ethoxide so as to form 2,2-dicyclopentadienylpropane; and (b) reacting said 2,2-dicyclopentadienylpropane with zirconium(IV) chloride in the presence of n-butyl lithium so as to form isopropylidene bis(cyclopentadienyl) zirconium dichloride.

The present invention describes a process for preparing isopropylidene bis(cyclopentadienyl)zirconium dichloride comprising the steps of: (a) reacting acetone and cyclopentadiene in the presence of sodium methoxide or sodium ethoxide so as to form 2,2-dicyclopentadienylpropane; and (b) reacting said 2,2-dicyclopentadienylpropane with zirconium(IV) chloride in the presence of n-butyl lithium so as to form isopropylidene bis(cyclopentadienyl) zirconium dichloride.

A metal complex of the formula (1) InCyLMZp (1), wherein M is a group 4 metal, Z is an anionic ligand, p is number of 1 to 2, InCy is an indole fused cyclopentadienyl-type ligand of the formula (2) wherein R.sup.1 independently is a C1-C4-alkyl, m is a number of 0 to 4, R.sup.2 is a C1-C10-alkyl, C5-C10-cycloalkyl, or a C6-C10-aryl unsubstituted or substituted with C1-C10-alkyl or C1-C4-dialkyl amino, R.sup.3, R.sup.4 and R.sup.5 each is independently selected from hydrogen, C1-C4-alkyl, C6-C10-aryl unsubstituted or substituted with C1-C4-alkyl, halide, or both of C1-C4-alkyl and halide and, L is an amidinate ligand of the formula (3a) wherein the amidine-containing ligand (3a) is bonded to the metal M via the imine nitrogen atom N2, wherein R.sup.7 is independently selected from C1-C4-alkyl and halide and q is a number of 0 to 4, Sub.sub.4 is a cyclic or linear aliphatic or aromatic substituent. ##STR00001##

A metal complex of the formula (1) InCyLMZp (1), wherein M is a group 4 metal, Z is an anionic ligand, p is number of 1 to 2, InCy is an indole fused cyclopentadienyl-type ligand of the formula (2) wherein R.sup.1 independently is a C1-C4-alkyl, m is a number of 0 to 4, R.sup.2 is a C1-C10-alkyl, C5-C10-cycloalkyl, or a C6-C10-aryl unsubstituted or substituted with C1-C10-alkyl or C1-C4-dialkyl amino, R.sup.3, R.sup.4 and R.sup.5 each is independently selected from hydrogen, C1-C4-alkyl, C6-C10-aryl unsubstituted or substituted with C1-C4-alkyl, halide, or both of C1-C4-alkyl and halide and, L is an amidinate ligand of the formula (3a) wherein the amidine-containing ligand (3a) is bonded to the metal M via the imine nitrogen atom N2, wherein R.sup.7 is independently selected from C1-C4-alkyl and halide and q is a number of 0 to 4, Sub.sub.4 is a cyclic or linear aliphatic or aromatic substituent. ##STR00001##

Organometallic precursors and methods of depositing high purity metal films are discussed. Some embodiments utilize a method comprising exposing a substrate surface to an organometallic precursor comprising one or more of molybdenum (Mo), tungsten (W), osmium (Os), technetium (Tc), manganese (Mn), rhenium (Re) or ruthenium (Ru), and an iodine-containing reactant comprising a species having a formula RI.sub.x, where R is one or more of a C.sub.1-C.sub.10 alkyl, C.sub.3-C.sub.10 cycloalkyl, C.sub.2-C.sub.10 alkenyl, or C.sub.2-C.sub.10 alkynyl group, I is an iodine group and x is in a range of 1 to 4 to form a carbon-less iodine-containing metal film. Some embodiments advantageously provide methods of forming metal films having low carbon content (e.g., having greater than or equal to 95% metal species on an atomic basis), without using an oxidizing agent or a reductant.

Organometallic precursors and methods of depositing high purity metal films are discussed. Some embodiments utilize a method comprising exposing a substrate surface to an organometallic precursor comprising one or more of molybdenum (Mo), tungsten (W), osmium (Os), technetium (Tc), manganese (Mn), rhenium (Re) or ruthenium (Ru), and an iodine-containing reactant comprising a species having a formula RI.sub.x, where R is one or more of a C.sub.1-C.sub.10 alkyl, C.sub.3-C.sub.10 cycloalkyl, C.sub.2-C.sub.10 alkenyl, or C.sub.2-C.sub.10 alkynyl group, I is an iodine group and x is in a range of 1 to 4 to form a carbon-less iodine-containing metal film. Some embodiments advantageously provide methods of forming metal films having low carbon content (e.g., having greater than or equal to 95% metal species on an atomic basis), without using an oxidizing agent or a reductant.

Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.

Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.

This invention relates to a method comprising contacting C3-C32 alpha olefin with catalyst system comprising activator and catalyst of the formula wherein: M is Hf or Zr; T is a bridging group; each X is independently a leaving group; R1 and R2 are independently hydrogen, or a Ci-Gto optionally substituted hydrocarbyl group, halide, or siloxyl group; R3, R4, R5 and R6 are independently a Ci-Gto optionally substituted hydrocarbyl, halocarbyl, silylcarbyl, aminocarbyl, or siloxyl group; and A is an aliphatic, aromatic or heteroaromatic ring, optionally bearing one or more additional fused rings which may be aliphatic, aromatic or heteroaromatic; obtaining a plurality of vinyl-terminated polyalphaolefins (PAOs) having at least 30 mol % vinyl terminated PAO's.

##STR00001##