The present invention relates to a method for producing a high yield of an organometallic compound including a step of allowing a metal hexacarbonyl compound to react with a hexahydro-1,3,5-triazine compound, and a thin film having excellent properties, fabricated by depositing the produced organometallic compound.

This invention relates bisindenyl metallocene catalyst compounds having long (at least 4 carbon atoms) linear alkyl groups substituted at the two position and substituted or unsubstituted aryl groups at the four position and process using such catalyst compounds, particularly in the solution process at higher temperatures.

This invention relates bisindenyl metallocene catalyst compounds having long (at least 4 carbon atoms) linear alkyl groups substituted at the two position and substituted or unsubstituted aryl groups at the four position and process using such catalyst compounds, particularly in the solution process at higher temperatures.

According to an embodiment of the present disclosure, a niobium precursor compound is represented by Chemical Formula 1 or Chemical Formula 2 below:

##STR00001##

Therefore, the niobium precursor compound according to an embodiment of the present disclosure has excellent thermal stability, exists in a liquid state at room temperature, and has high volatility, thereby having an advantage which is advantageous for application to a thin film forming process. Further, the niobium thin film formed using the niobium precursor compound according to an embodiment of the present disclosure has a small residual content and has uniform physical properties.

The metallocene compound represented by the following general formula (1): ##STR00001##
(the numerals and signs in the general formula (1) are as described in the description).

The metallocene compound represented by the following general formula (1): ##STR00001##
(the numerals and signs in the general formula (1) are as described in the description).

Metallocene complexes represented by the structure below are useful for alpha olefin oligomerization in the presence of an activator to generate polyalphaolefins having a high percentage of vinylidene termination and relatively low Mn values. ##STR00001##
M is a group 4 transition metal. A is a bridging group having one bridging atom extending between a first indenyl ring and a second indenyl ring. Each X is independently an anionic ligand, or two Xs are joined and bound to M to form a metallocycle ring, or two Xs are joined to form a chelating ligand, a diene ligand, or an alkylidene ligand. R.sup.1, R.sup.1′, R.sup.3, R.sup.3′, R.sup.4, R.sup.4′, R.sup.7 and R.sup.7′ are hydrogen. R.sup.5, R.sup.5′, R.sup.6, and R.sup.6′ are independently a C.sub.1-C.sub.10, optionally substituted, hydrocarbyl group, or R.sup.5 and R.sup.6 and/or R.sup.5′ and R.sup.6′ are bonded together to form an optionally substituted hydrocarbyl ring structure.

Metallocene complexes represented by the structure below are useful for alpha olefin oligomerization in the presence of an activator to generate polyalphaolefins having a high percentage of vinylidene termination and relatively low Mn values. ##STR00001##
M is a group 4 transition metal. A is a bridging group having one bridging atom extending between a first indenyl ring and a second indenyl ring. Each X is independently an anionic ligand, or two Xs are joined and bound to M to form a metallocycle ring, or two Xs are joined to form a chelating ligand, a diene ligand, or an alkylidene ligand. R.sup.1, R.sup.1′, R.sup.3, R.sup.3′, R.sup.4, R.sup.4′, R.sup.7 and R.sup.7′ are hydrogen. R.sup.5, R.sup.5′, R.sup.6, and R.sup.6′ are independently a C.sub.1-C.sub.10, optionally substituted, hydrocarbyl group, or R.sup.5 and R.sup.6 and/or R.sup.5′ and R.sup.6′ are bonded together to form an optionally substituted hydrocarbyl ring structure.

The present disclosure provides a novel Group 4 metal element-containing compound, a method of preparing the Group 4 metal element-containing compound, a precursor composition including the Group 4 metal element-containing compound for film deposition, and a method of forming a Group 4 metal element-containing film using the Group 4 metal element-containing compound. The novel Group 4 metal element-containing compound according to embodiments of the present disclosure makes it possible to form a Group 4 metal element-containing film by atomic layer deposition at a higher temperature than conventionally known Group 4 metal element-containing compounds.

The invention relates to a metallocene complex according to formula (I), (I) wherein R.sub.1 and R.sub.2 are independently selected from H, an alkyl or an aryl group, wherein R.sub.3 is a C1-C10 alkyl group, wherein R′ is selected from H, an alkyl group, an aryl group and wherein different R′ substituents can be connected to form a ring structure and wherein B is a 1,2 phenylene bridging moiety, which can be optionally substituted, wherein Mt is selected from Ti, Zr and Hf, X is an anionic ligand, z is the number of X groups and equals the valence of Mt minus 2. The invention also relates to a catalyst comprising the reaction product of the metallocene complex and a cocatalyst. Further the invention relates to a (co)polymerisation process of olefinic monomers.

##STR00001##