C07F17/00

Catalysts

A complex of formula (I): (I′) M is Hf; each X is a sigma ligand; L is a bridge of formula -(ER.sup.8.sub.2).sub.y—; y is 1 or 2; E is C or Si; each R.sup.8 is independently a C.sub.1-C.sub.20-hydrocarbyl, tri(C.sub.1-C.sub.20-alkyl)silyl, C.sub.6-C.sub.20-aryl, C.sub.7-C.sub.20-arylalkyl or C.sub.7-C.sub.20-alkylaryl or L is an alkylene group such as methylene or ethylene; Ar and Ar′ are each independently an aryl or heteroaryl group optionally substituted by 1 to 3 groups R.sup.1 or R.sup.1′ respectively; R.sup.1 and R.sup.1′ are each independently the same or can be different and are a linear or branched C.sub.1-C.sub.6-alkyl group, C.sub.7-20 arylalkyl, C.sub.7-20 alkylaryl group or C.sub.6-20 aryl group with the proviso that if there are four or more R.sup.1 and R.sup.1′ groups present in total, one or more of R.sup.1 and R.sup.1′ is other than tert butyl; R.sup.2 and R.sup.2′ are the same or are different and are a CH.sub.2—R.sup.9 group, with R.sup.9 being H or linear or branched C.sub.1-C.sub.6-alkyl group, C.sub.3-8 cycloalkyl group, C.sub.6-10 aryl group; each R is a —CH.sub.2—, —CHRx- or C(Rx).sub.2- group wherein Rx is C.sub.1-4 alkyl and where m is 2-6; R.sup.5 is a linear or branched C.sub.1-C.sub.6-alkyl group, C.sub.7-20 arylalkyl, C.sub.7-20 alkylaryl group or C.sub.6-C.sub.20-aryl group; R.sup.6 is a C(R.sup.10).sub.3 group, with R.sup.10 being a linear or branched C.sub.1-C.sub.6 alkyl group; and R.sup.6 and R.sup.7′ are the same or are different and are H or a linear or branched C.sub.1-C.sub.6-alkyl group. Invention relates also to a catalyst in solid form comprising (i) a complex of formula (I) and (ii) a cocatalyst of an aluminium compound and (iii) a cocatalyst of a boron compound. ##STR00001##

Catalysts

A complex of formula (I): (I′) M is Hf; each X is a sigma ligand; L is a bridge of formula -(ER.sup.8.sub.2).sub.y—; y is 1 or 2; E is C or Si; each R.sup.8 is independently a C.sub.1-C.sub.20-hydrocarbyl, tri(C.sub.1-C.sub.20-alkyl)silyl, C.sub.6-C.sub.20-aryl, C.sub.7-C.sub.20-arylalkyl or C.sub.7-C.sub.20-alkylaryl or L is an alkylene group such as methylene or ethylene; Ar and Ar′ are each independently an aryl or heteroaryl group optionally substituted by 1 to 3 groups R.sup.1 or R.sup.1′ respectively; R.sup.1 and R.sup.1′ are each independently the same or can be different and are a linear or branched C.sub.1-C.sub.6-alkyl group, C.sub.7-20 arylalkyl, C.sub.7-20 alkylaryl group or C.sub.6-20 aryl group with the proviso that if there are four or more R.sup.1 and R.sup.1′ groups present in total, one or more of R.sup.1 and R.sup.1′ is other than tert butyl; R.sup.2 and R.sup.2′ are the same or are different and are a CH.sub.2—R.sup.9 group, with R.sup.9 being H or linear or branched C.sub.1-C.sub.6-alkyl group, C.sub.3-8 cycloalkyl group, C.sub.6-10 aryl group; each R is a —CH.sub.2—, —CHRx- or C(Rx).sub.2- group wherein Rx is C.sub.1-4 alkyl and where m is 2-6; R.sup.5 is a linear or branched C.sub.1-C.sub.6-alkyl group, C.sub.7-20 arylalkyl, C.sub.7-20 alkylaryl group or C.sub.6-C.sub.20-aryl group; R.sup.6 is a C(R.sup.10).sub.3 group, with R.sup.10 being a linear or branched C.sub.1-C.sub.6 alkyl group; and R.sup.6 and R.sup.7′ are the same or are different and are H or a linear or branched C.sub.1-C.sub.6-alkyl group. Invention relates also to a catalyst in solid form comprising (i) a complex of formula (I) and (ii) a cocatalyst of an aluminium compound and (iii) a cocatalyst of a boron compound. ##STR00001##

Organometallic compounds for the manufacture of a semiconductor element or electronic memory

The invention relates to compounds in accordance with the general formula [Ru(arene)(R.sup.a—N═CR.sup.1—CR.sup.3═N—R.sup.b)] or [Ru(arene)((R.sup.c,R.sup.d)N—N═CR.sup.H1—CR.sup.H3═N—N(R.sup.e,R.sup.f))]. In this case, arene is selected from the group consisting of mononuclear and polynuclear arenes and heteroarenes. R.sup.1, R.sup.3, RH.sup.1, R.sup.H3 and R.sup.a-R.sup.f are independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl radical. It further relates to methods for the production of these compounds, compounds obtainable according to these methods, their use and a substrate having on a surface thereof a ruthenium layer or a layer containing ruthenium. In addition, the invention relates to a method for producing compounds [Ru(arene)X.sub.2]2, wherein arene is selected from the group consisting of mononuclear and polynuclear arenes and X=halogen, compounds of this type obtainable according to this method, and their use. The aforementioned ruthenium(O) compounds can be produced in a simple, cost-effective and reproducible manner with a high degree of purity and good yield. Due to their high degree of purity, they are suitable for use as ruthenium(O) precursors.

Ligand compound, metallocene compound, and method for preparation of olefin-based polymer using the same

The present invention relates to a novel ligand compound, a metallocene compound, and a method for preparing an olefin-based polymer using the same. The metallocene compound according to the present invention and a catalyst composition comprising the same have excellent polymerization activity, and yet, have excellent comonomer insertion capability, and thus, can be used to prepare olefin-based polymer having wide molecular weight distribution and the resulting excellent processability.

Ligand compound, metallocene compound, and method for preparation of olefin-based polymer using the same

The present invention relates to a novel ligand compound, a metallocene compound, and a method for preparing an olefin-based polymer using the same. The metallocene compound according to the present invention and a catalyst composition comprising the same have excellent polymerization activity, and yet, have excellent comonomer insertion capability, and thus, can be used to prepare olefin-based polymer having wide molecular weight distribution and the resulting excellent processability.

CONTROLLING LONG-CHAIN BRANCH CONTENT WITH DUAL ACTIVATOR-SUPPORTS

Methods for controlling the long chain branch content of ethylene homopolymers and copolymers produced in a polymerization process include the steps of contacting a metallocene compound, an organoaluminum compound, a high LCB activator-support, and a low LCB activator-support to form a catalyst composition, contacting the catalyst composition with ethylene and an optional olefin comonomer in a polymerization reactor system under polymerization conditions to produce an ethylene polymer having a LCB content, and controlling the relative amount of the high LCB activator-support and the low LCB activator-support in the catalyst composition to adjust the LCB content of the ethylene polymer.

CONTROLLING LONG-CHAIN BRANCH CONTENT WITH DUAL ACTIVATOR-SUPPORTS

Methods for controlling the long chain branch content of ethylene homopolymers and copolymers produced in a polymerization process include the steps of contacting a metallocene compound, an organoaluminum compound, a high LCB activator-support, and a low LCB activator-support to form a catalyst composition, contacting the catalyst composition with ethylene and an optional olefin comonomer in a polymerization reactor system under polymerization conditions to produce an ethylene polymer having a LCB content, and controlling the relative amount of the high LCB activator-support and the low LCB activator-support in the catalyst composition to adjust the LCB content of the ethylene polymer.

MID-VALENT MOLYBDENUM COMPLEXES FOR THIN FILM DEPOSITION

Described herein are IC devices that include molybdenum or a molybdenum compound, such as compounds including oxygen or nitrogen. The molybdenum may be deposited at a high concentration, e.g., at least 50% atomic density. Also described herein are mid-valent molybdenum precursors for depositing molybdenum, and reactions for producing the mid-valent molybdenum precursors. For example, the molybdenum precursors may be generated by reacting a higher-valent molybdenum compound with an amidinate or a formamidinate.

MID-VALENT MOLYBDENUM COMPLEXES FOR THIN FILM DEPOSITION

Described herein are IC devices that include molybdenum or a molybdenum compound, such as compounds including oxygen or nitrogen. The molybdenum may be deposited at a high concentration, e.g., at least 50% atomic density. Also described herein are mid-valent molybdenum precursors for depositing molybdenum, and reactions for producing the mid-valent molybdenum precursors. For example, the molybdenum precursors may be generated by reacting a higher-valent molybdenum compound with an amidinate or a formamidinate.

Catalyst systems and processes for poly alpha-olefin having high vinylidene content

A process for making a poly alpha-olefin (PAO) having a relatively high vinylidene content (or combined vinylidene and tri-substituted vinylene content) and a relatively low vinyl and/or di-substituted vinylene content, as well as a relatively low molecular weight. The process includes: contacting a feed containing a C.sub.2-C.sub.32 alpha-olefin with a catalyst system comprising activator and a bis-cyclopentadienyl metallocene compound, typically a cyclopentadienyl-benzindenyl group 4 transition metal compound.