The present disclosure relates to a compound capable of implementing thin film deposition through vapor deposition, and more particularly, to a rare earth compound which is applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and has excellent thermal stability and reactivity, a rare earth precursor containing the same, a method of preparing the same, and a method of forming a thin film using the same.

The present disclosure relates to a compound capable of implementing thin film deposition through vapor deposition, and more particularly, to a rare earth compound which is applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and has excellent thermal stability and reactivity, a rare earth precursor containing the same, a method of preparing the same, and a method of forming a thin film using the same.

Provided is an ionic solid having pores for incorporating a substance therein.

Provided is an ionic solid having pores for incorporating a substance therein.

This disclosure relates to tertiary amine solutions of metal precursors used for chemical vapor deposition or atomic layer deposition. The tertiary amine solutions have many advantages. They dissolve high concentrations of non-polar precursors without reacting with them. They do not supply impurities such as oxygen or halogens to the material being produced, nor do they etch or corrode them. Vaporization rates can be chosen so that the solute and solvent may be evaporated simultaneously, have high flash points, and low flammability. Small droplets may be formed easily which facilitate rapid evaporation without decomposition of he dissolved metal precursor to supply vapors for chemical vapor deposition or atomic layer deposition processes.

Embodiments of the present application are directed to procatalysts, and catalyst systems including procatalysts, including a metal-ligand complex having the structure of formula (I):

##STR00001##

A permanently porous vanadium(II)-containing metal-organic framework (MOF) with vanadium(II) centers and methods for synthesis of such MOF frameworks are provided. Methods for using such compounds to selectively react with N.sup.2 over CH.sub.4 are provided. In the synthetic methods, a vanadium source, such as VY.sub.2(tmeda).sub.2, where Y is a halogen and tmeda is N,N,N′,N′-tetramethylethane-1,2-diamine and a H.sub.2(ligand) are reacted in the presence of acid in a solvent at between 110° C. and 130° C. to form an intermediate product. The intermediate product is collected and washed with a washing agent, such as DMF and acetonitrile, and the vanadium(II) based MOF is activated by heating the washed intermediate product to at least 160° C. under dynamic vacuum.

A method for producing ammonia involves producing ammonia from molecular nitrogen in a production apparatus for performing electrolysis by supplying electrons from a power source, protons from a proton source and molecular nitrogen from a device for supplying a nitrogen gas while in the presence of a solid catalyst and a complex in a cathode. For example, a molybdenum complex represented by formula (A1) or formula (B2) as the complex, and a platinum catalyst or a platinum catalyst/gold catalyst combination as the solid catalyst are used.

##STR00001##

Embodiments of the present application are directed to procatalysts, and catalyst systems including procatalysts, including a metal-ligand complex having the structure of formula (I): [Formula I]

Provided are a novel ionic solid usable for a secondary battery and demonstratinq a hiqh ionic conductivity, and an ionic conductor containinq the same. An ionic solid, wherein an anionic heterometallic complex composed of one metal M.sup.1 selected from the group consisting of Ir, Rh, Co, Os, Ru, Fe, Ni, Cr and Mn, one metal M.sup.2 selected from the group consisting of Zn, Cd, Hg, Au, Ag and Cu (provided that when M.sup.1 is Rh, M.sup.2 is not Zn) and a ligand aggregates to form a crystal lattice in which a cationic species is present in an interstice in the crystal lattice.