Disclosed herein is a composition comprising a block copolymer; where the block copolymer comprises a first polymer and a second polymer; where the first polymer and the second polymer of the block copolymer are different from each other and the block copolymer forms a phase separated structure; an additive polymer; where the additive polymer comprises a bottlebrush polymer; and where the bottlebrush polymer comprises a polymer that is chemically and structurally the same as one of the polymers in the block copolymer or where the bottlebrush polymer comprises a polymer that has a preferential interaction with one of the blocks of the block copolymers; and a solvent.

Disclosed herein is a composition comprising a block copolymer; where the block copolymer comprises a first polymer and a second polymer; where the first polymer and the second polymer of the block copolymer are different from each other and the block copolymer forms a phase separated structure; an additive polymer; where the additive polymer comprises a bottlebrush polymer; and where the bottlebrush polymer comprises a polymer that is chemically and structurally the same as one of the polymers in the block copolymer or where the bottlebrush polymer comprises a polymer that has a preferential interaction with one of the blocks of the block copolymers; and a solvent.

Disclosed herein is a method comprising disposing a mat composition on a surface of a semiconductor substrate; where the mat composition comprises a random copolymer comprising a first acrylate unit and a second unit; where the copolymer does not comprise a polystyrene or a polyepoxide; crosslinking the random copolymer; disposing a brush backfill composition on the substrate; such that the brush backfill composition and the mat composition alternate with each other; disposing on the brush backfill composition and on the mat composition a block copolymer that undergoes self assembly; and etching the block copolymer to create uniformly spaced channels in the semiconductor substrate.

Disclosed herein is a method comprising disposing a mat composition on a surface of a semiconductor substrate; where the mat composition comprises a random copolymer comprising a first acrylate unit and a second unit; where the copolymer does not comprise a polystyrene or a polyepoxide; crosslinking the random copolymer; disposing a brush backfill composition on the substrate; such that the brush backfill composition and the mat composition alternate with each other; disposing on the brush backfill composition and on the mat composition a block copolymer that undergoes self assembly; and etching the block copolymer to create uniformly spaced channels in the semiconductor substrate.

A frequently-touched surface for use by multiple users includes a surface protected by a laminate structure. The laminate structure includes a self-sterilizing sulfonated polymeric outer layer, sulfonated to a certain % to kill at least 95% microbes within 30 minutes of contact. The self-sterilizing sulfonated polymer layer can be applied to the frequently touched surface by any of coating, lamination, and spraying. The sulfonated polymer in embodiment is selected from perfluorosulfonic acid polymers, polystyrene sulfonates, sulfonated block copolymers, sulfonated polyolefins, sulfonated polyimides, sulfonated polyamides, sulfonated polyesters, sulfonated polysulfones, sulfonated polyketones, sulfonated poly(arylene ether), and mixtures thereof. The sulfonated polymer has a degree of sulfonation of at least 10%.

A layer including a block copolymer in which a microphase-separated structure of the block copolymer has been induced perpendicular to a substrate, this process being difficult in heating under atmospheric pressure; a method for producing the layer; and a method for producing a semiconductor device in which is used a vertically phase-separated layer of a block copolymer. A vertically phase-separated layer of a block copolymer formed by heating at a pressure below atmospheric pressure and a temperature at which induced self-assembly can occur.

The present disclosure provides a photovoltaic module. In an embodiment, the photovoltaic module includes a photovoltaic cell, and a layer composed of a film. The film includes a silane-grafted polyolefin (Si-g-PO) resin composition comprising (i) one or more silane grafted polyolefins and (ii) from greater than 0 wt % to less than 5.0 wt % of a micronized silica gel, based on the total weight of the Si-g-PO resin composition. The film has a glass adhesion greater than or equal to 15 N/mm after aging the film at 40° C. and 0% relative humidity for 60 days as measured in accordance with ASTM F88/88M-09.

The present disclosure provides a photovoltaic module. In an embodiment, the photovoltaic module includes a photovoltaic cell, and a layer composed of a film. The film includes a silane-grafted polyolefin (Si-g-PO) resin composition comprising (i) one or more silane grafted polyolefins and (ii) from greater than 0 wt % to less than 5.0 wt % of a micronized silica gel, based on the total weight of the Si-g-PO resin composition. The film has a glass adhesion greater than or equal to 15 N/mm after aging the film at 40° C. and 0% relative humidity for 60 days as measured in accordance with ASTM F88/88M-09.

Disclosed herein is a block copolymer comprising a first segment and a second segment that are covalently bonded to each other and that are chemically different from each other; where the first segment has a first surface free energy and where the second segment has a second surface free energy; and an additive copolymer; where the additive copolymer comprises a surface free energy reducing moiety where the surface free energy reducing moiety has a lower surface free energy than that of the first segment and the second segment; the additive copolymer further comprising one or more moieties having an affinity to the block copolymer; where the surface free energy reducing moiety is chemically different from the first segment and from the second segment; where the additive copolymer is not water miscible; and where the additive copolymer is not covalently bonded with the block copolymer.

Disclosed herein is a block copolymer comprising a first segment and a second segment that are covalently bonded to each other and that are chemically different from each other; where the first segment has a first surface free energy and where the second segment has a second surface free energy; and an additive copolymer; where the additive copolymer comprises a surface free energy reducing moiety where the surface free energy reducing moiety has a lower surface free energy than that of the first segment and the second segment; the additive copolymer further comprising one or more moieties having an affinity to the block copolymer; where the surface free energy reducing moiety is chemically different from the first segment and from the second segment; where the additive copolymer is not water miscible; and where the additive copolymer is not covalently bonded with the block copolymer.