The present invention relates to a backsheet for photovoltaic modules comprising a polymeric layer comprising an aliphatic polyamide comprising 1,10-decanedioic acid. Examples of such aliphatic polyamides are polyamide 4,10, polyamide 5,10 or polyamide 6,10. Preferably polyamide 4,10 is present in the rear layer of the backsheet. A polyolefin layer is preferably present in the core layer of the backsheet. It is however also possible that the polyamide is present in the core layer and polyolefin is present in the rear layer of the backsheet. The polyolefin is preferably chosen from the group consisting of polyethylene, polypropylene or ethylene-propylene copolymers. More preferably the polyolefin is polypropylene. The backsheet preferably comprises at least a further polymeric layer comprising a polymer selected from the group consisting of an optionally functionalized polyolefin such as a maleic anhydride functionalized polypropylene homo or copolymer. The present invention further relates to a photovoltaic module containing essentially, in order of position from the front-sun facing side to the back non-sun-facing side, a transparent pane, a front encapsulant layer, a solar cell layer comprised of one or more electrically interconnected solar cells, a back encapsulant layer and the back-sheet according to the present invention.

A method of polymerizing monomer to form polymer at the surface of particulate material, said method comprising: providing a dispersion of said particulate material in a continuous liquid phase, said dispersion comprising a RAFT agent as a stabilizer for said particulate material, and said continuous liquid phase comprising one or more ethylenically unsaturated monomers; and polymerizing said one or more ethylenically unsaturated monomers under the control of said RAFT agent to thereby form polymer at the surface of said particulate material.

A method of polymerizing monomer to form polymer at the surface of particulate material, said method comprising: providing a dispersion of said particulate material in a continuous liquid phase, said dispersion comprising a RAFT agent as a stabilizer for said particulate material, and said continuous liquid phase comprising one or more ethylenically unsaturated monomers; and polymerizing said one or more ethylenically unsaturated monomers under the control of said RAFT agent to thereby form polymer at the surface of said particulate material.

A method of polymerizing monomer to form polymer at the surface of particulate material, said method comprising: providing a dispersion of said particulate material in a continuous liquid phase, said dispersion comprising a RAFT agent as a stabilizer for said particulate material, and said continuous liquid phase comprising one or more ethylenically unsaturated monomers; and polymerizing said one or more ethylenically unsaturated monomers under the control of said RAFT agent to thereby form polymer at the surface of said particulate material.

Techniques disclosed herein include methods for creating a directed self-assembly tunable neutral layer that works with multiple different block copolymer materials. Techniques herein can include depositing a neutral layer and then post-processing this neutral layer to tune its characteristics so that the neutral layer is compatible with a particular block copolymer scheme or schemes. Post-processing herein of such a neutral layer can modify a ratio of pi and sigma bonds in a given carbon film or other film to approximate a given self-assembly film that will be deposited on this neutral layer. Accordingly, a generic or single material can be used for a neutral layer and modified to match a given block copolymer to be deposited.

Techniques disclosed herein include methods for creating a directed self-assembly tunable neutral layer that works with multiple different block copolymer materials. Techniques herein can include depositing a neutral layer and then post-processing this neutral layer to tune its characteristics so that the neutral layer is compatible with a particular block copolymer scheme or schemes. Post-processing herein of such a neutral layer can modify a ratio of pi and sigma bonds in a given carbon film or other film to approximate a given self-assembly film that will be deposited on this neutral layer. Accordingly, a generic or single material can be used for a neutral layer and modified to match a given block copolymer to be deposited.

The present application provides a block copolymer and uses thereof. The block copolymer of the present application exhibits an excellent self-assembling property or phase separation property, can be provided with a variety of required functions without constraint and, especially, etching selectivity can be secured, making the block copolymer effectively applicable to such uses as pattern formation.

The present application provides a block copolymer and uses thereof. The block copolymer of the present application exhibits an excellent self-assembling property or phase separation property, can be provided with a variety of required functions without constraint and, especially, etching selectivity can be secured, making the block copolymer effectively applicable to such uses as pattern formation.

The present application provides a block copolymer and uses thereof. The block copolymer of the present application exhibits an excellent self-assembling property or phase separation property, can be provided with a variety of required functions without constraint and, especially, etching selectivity can be secured, making the block copolymer effectively applicable to such uses as pattern formation.

The present application provides a block copolymer and uses thereof. The block copolymer of the present application exhibits an excellent self-assembling property or phase separation property, and can be provided with a variety of required functions without constraint.