The present invention relates to a polishing agent including: a water-soluble polymer including a copolymer of a monomer (A) which includes at least one member selected from the group consisting of an unsaturated dicarboxylic acid, a derivative thereof, and salts of the unsaturated dicarboxylic acid and the derivative thereof and a monomer (B) other than the monomer (A), comprising an ethylenic double bond and no acidic group; a cerium oxide particle; and water, in which the polishing agent has a pH of 4 to 9.

The present invention relates to a polishing agent including: a water-soluble polymer including a copolymer of a monomer (A) which includes at least one member selected from the group consisting of an unsaturated dicarboxylic acid, a derivative thereof, and salts of the unsaturated dicarboxylic acid and the derivative thereof and a monomer (B) other than the monomer (A), comprising an ethylenic double bond and no acidic group; a cerium oxide particle; and water, in which the polishing agent has a pH of 4 to 9.

Chemical Mechanical Planarization (CMP) polishing compositions comprising abrasive particles and additives to boost removal rates of films comprising elemental silicon such as poly-silicon and Silicon-Germanium.

Chemical Mechanical Planarization (CMP) polishing compositions comprising abrasive particles and additives to boost removal rates of films comprising elemental silicon such as poly-silicon and Silicon-Germanium.

A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.

A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.

A substrate polishing method includes a stock polishing step comprising a plurality of stock polishing sub-steps in which a first polishing solution, a second polishing solution, and a third polishing solution are applied, in that order, to a substrate. A content COM.sub.P1 of water-soluble polymer P.sub.1 in the first polishing solution, a content COM.sub.P2 of water-soluble polymer P.sub.2 in the second polishing solution, and a content COM.sub.P3 of water-soluble polymer P.sub.3 in the third polishing solution satisfy COM.sub.P1<COM.sub.P2<COM.sub.P3, and any one of the following conditions is satisfied: (1) average primary particle diameter D.sub.A3 of abrasive A.sub.3 in the third polishing solution is smaller than average primary particle diameter D.sub.A1 of abrasive A.sub.1 in the first polishing solution and average primary particle diameter D.sub.A2 of abrasive A.sub.2 in the second polishing solution; and (2) the third polishing solution does not contain abrasive A.sub.3.

A substrate polishing method includes a stock polishing step comprising a plurality of stock polishing sub-steps in which a first polishing solution, a second polishing solution, and a third polishing solution are applied, in that order, to a substrate. A content COM.sub.P1 of water-soluble polymer P.sub.1 in the first polishing solution, a content COM.sub.P2 of water-soluble polymer P.sub.2 in the second polishing solution, and a content COM.sub.P3 of water-soluble polymer P.sub.3 in the third polishing solution satisfy COM.sub.P1<COM.sub.P2<COM.sub.P3, and any one of the following conditions is satisfied: (1) average primary particle diameter D.sub.A3 of abrasive A.sub.3 in the third polishing solution is smaller than average primary particle diameter D.sub.A1 of abrasive A.sub.1 in the first polishing solution and average primary particle diameter D.sub.A2 of abrasive A.sub.2 in the second polishing solution; and (2) the third polishing solution does not contain abrasive A.sub.3.

A polishing composition according to the present invention includes: silica; an anionic water-soluble polymer; at least one compound selected from the group consisting of a phosphonate group-containing compound, a phosphate group-containing compound, and an amino group-containing compound; and a dispersing medium.

A polishing composition according to the present invention includes: silica; an anionic water-soluble polymer; at least one compound selected from the group consisting of a phosphonate group-containing compound, a phosphate group-containing compound, and an amino group-containing compound; and a dispersing medium.