A method of CMP includes providing a slurry solution including ≥1 per-compound oxidizer in a concentration between 0.01 M and 2 M with a pH from 2 to 5 or 8 to 11, and ≥1 buffering agent which provides a buffering ratio ≥1.5 that compares an amount of a strong acid needed to reduce the pH from 9.0 to 3.0 as compared to an amount of strong acid to change the pH from 9.0 to 3.0 without the buffering agent. The slurry solution is exclusive any hard slurry particles or has only soft slurry particles that have throughout a Vickers hardness <300 Kg/mm.sup.2 or Mohs Hardness <4. The slurry solution is dispensed on a hard surface having a Vickers hardness >1,000 kg/mm.sup.2 is pressed by a polishing pad with the slurry solution in between while rotating the polishing pad relative to the hard surface.

A metal interconnect structure can be fabricated within an integrated circuit (IC). A recess can be created in an IC dielectric layer and a surface modulation liner can be formed by depositing two different metallic elements onto the surfaces of the recess. One metallic element can have a standard electrode potential greater than a standard electrode potential of an interconnect metal, and the other metallic element can have a standard electrode potential less than the standard electrode potential of the interconnect metal. A metal interconnect structure can be formed by filling the remainder of the recess with interconnect metal, which is physically separated from the dielectric layer by the surface modulation liner. The surface topography of the metal interconnect structure can be modulated with a polishing process, by removing a top portion of the interconnect metal and a top portion of the surface modulation liner.

A metal interconnect structure can be fabricated within an integrated circuit (IC). A recess can be created in an IC dielectric layer and a surface modulation liner can be formed by depositing two different metallic elements onto the surfaces of the recess. One metallic element can have a standard electrode potential greater than a standard electrode potential of an interconnect metal, and the other metallic element can have a standard electrode potential less than the standard electrode potential of the interconnect metal. A metal interconnect structure can be formed by filling the remainder of the recess with interconnect metal, which is physically separated from the dielectric layer by the surface modulation liner. The surface topography of the metal interconnect structure can be modulated with a polishing process, by removing a top portion of the interconnect metal and a top portion of the surface modulation liner.

An etching composition includes an inorganic acid compound, a carboxylic acid compound, a sulfonic acid compound, a glycol compound, a nitrogen-containing dicarbonyl compound, a sulfate compound and water.

A polishing system includes a substrate to be polished and a polishing pad. The polishing pad includes a base layer and a wear resistant layer. The system further includes a polishing solution disposed between the polishing pad and the substrate. The polishing solution includes a fluid component and a plurality of ceramic abrasive composites. The ceramic abrasive composites include individual abrasive particles uniformly dispersed throughout a porous ceramic matrix. At least a portion of the porous ceramic matrix includes glassy ceramic material. The ceramic abrasive composites are dispersed in the fluid component.

A polishing liquid comprising a liquid medium, an abrasive grain and a polymer, wherein the polymer includes a first molecular chain having a functional group directly bonded thereto, and a second molecular chain branched from the first molecular chain, and the functional group is at least one selected from the group consisting of a carboxyl group, a carboxylic acid salt group, a hydroxyl group, a sulfo group and a sulfonic acid salt group.

A polishing liquid comprising a liquid medium, an abrasive grain and a polymer, wherein the polymer includes a first molecular chain having a functional group directly bonded thereto, and a second molecular chain branched from the first molecular chain, and the functional group is at least one selected from the group consisting of a carboxyl group, a carboxylic acid salt group, a hydroxyl group, a sulfo group and a sulfonic acid salt group.

The present invention relates to a polishing agent including: a water-soluble polymer including a copolymer of a monomer (A) which includes at least one member selected from the group consisting of an unsaturated dicarboxylic acid, a derivative thereof, and salts of the unsaturated dicarboxylic acid and the derivative thereof and a monomer (B) other than the monomer (A), comprising an ethylenic double bond and no acidic group; a cerium oxide particle; and water, in which the polishing agent has a pH of 4 to 9.

The present invention relates to a polishing agent including: a water-soluble polymer including a copolymer of a monomer (A) which includes at least one member selected from the group consisting of an unsaturated dicarboxylic acid, a derivative thereof, and salts of the unsaturated dicarboxylic acid and the derivative thereof and a monomer (B) other than the monomer (A), comprising an ethylenic double bond and no acidic group; a cerium oxide particle; and water, in which the polishing agent has a pH of 4 to 9.

There are provided a chemical mechanical polishing composition, a chemical mechanical polishing slurry and a method for polishing a substrate that can realize a polishing rate equivalent to or higher than that of the existing polishing agent even if total metal content is decreased, or can realize remarkably higher polishing rate than that of the existing polishing agent when using total metal content identical as before. The chemical mechanical polishing composition comprises an iron-based metal catalyst, and a magnesium-based metal catalyst, wherein the metal content of the iron-based metal catalyst is equal to or greater than the metal content of the magnesium-based metal catalyst.