An acid chemical mechanical polishing composition includes colloidal silica abrasive particles having a positive zeta potential, and select alkoxysilane succinic acid anhydride compounds to enhance the reduction of defects on dielectric materials of substrates such as silicon dioxide and silicon nitride. Also disclosed are methods for polishing a substrate with the acid chemical mechanical polishing composition to remove some of the dielectric materials such as silicon dioxide and silicon nitride.

An acid chemical mechanical polishing composition includes colloidal silica abrasive particles having a positive zeta potential, and select alkoxysilane succinic acid anhydride compounds to enhance the reduction of defects on dielectric materials of substrates such as silicon dioxide and silicon nitride. Also disclosed are methods for polishing a substrate with the acid chemical mechanical polishing composition to remove some of the dielectric materials such as silicon dioxide and silicon nitride.

A chemical mechanical polishing slurry composition for polishing a polycrystalline silicon film is presented, comprising: a solvent; a polishing agent; a pH adjuster; and at least one additive selected from the group consisting of a compound represented by Chemical Formula 1 below, a compound represented by Chemical Formula 2 below, and a tautomer thereof. The chemical mechanical polishing slurry composition for polishing a polycrystalline silicon film exhibits a high polishing speed and has various polishing selectivities when employed in a process for polishing a polycrystalline silicon film of a semiconductor wafer, and thus the composition may be effectively used as a composition for a process for polishing a polycrystalline silicon surface for the formation of highly integrated multilayer structured devices. ##STR00001##

A chemical mechanical polishing slurry composition for polishing a polycrystalline silicon film is presented, comprising: a solvent; a polishing agent; a pH adjuster; and at least one additive selected from the group consisting of a compound represented by Chemical Formula 1 below, a compound represented by Chemical Formula 2 below, and a tautomer thereof. The chemical mechanical polishing slurry composition for polishing a polycrystalline silicon film exhibits a high polishing speed and has various polishing selectivities when employed in a process for polishing a polycrystalline silicon film of a semiconductor wafer, and thus the composition may be effectively used as a composition for a process for polishing a polycrystalline silicon surface for the formation of highly integrated multilayer structured devices. ##STR00001##

Disclosed are antimicrobial sacrificial floor coatings systems including an antimicrobial sacrificial floor coating composition capable of reducing and/or preventing gram positive and gram negative bacterial growth on floors. Also disclosed is an antimicrobial sacrificial floor coating remover being readily capable of removing the antimicrobial sacrificial floor coating as desired from previously treated flooring surfaces. In certain aspects, the antimicrobial sacrificial floor coatings can include a cationic acrylic polymer; a nonionic wax; and a cationic alkyl biguanide or salt thereof. The antimicrobial sacrificial floor coating may further include a cationic wax that further stabilizes the system during storage, application, and/or post-application to a floor surface. The antimicrobial sacrificial floor coating composition has a pH of less than 7 while exhibiting continuous antimicrobial properties from full cure on a floor surface up to 1 year post-application to the floor surface at a minimum contact time of 1 hour.

Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) compositions, methods of using the composition and systems for using the composition are provided. The compositions comprise abrasive particles, and two different groups of chemical additives; a non-ionic organic surfactant molecule including polysorbate-type surfactants formed by the ethoxylation of the sorbitan and non-ionic organic molecules with multi hydroxyl functional groups in the same molecule. The compositions provide high silicon oxide removal rate (RR) and suppressed SiN removal rate (RR). A good pattern performance are provided by the compositions which offer desired silicon oxide RR at a reasonable DF and showing the high SiN RR suppression at an even higher DF from the blanket wafer data.

Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic metal oxide particles, such as ceria-coated silica; and dual chemical additives for providing the tunable oxide film removal rates and tunable SiN film removal rates. Chemical additives comprise at least one nitrogen-containing aromatic heterocyclic compound and at least one non-ionic organic molecule having more than one hydroxyl functional group organic.

An acid chemical mechanical polishing composition includes colloidal silica abrasive particles having a positive zeta potential, and select alkoxysilane succinic acid anhydride compounds to enhance the reduction of defects on dielectric materials of substrates such as silicon dioxide and silicon nitride. Also disclosed are methods for polishing a substrate with the acid chemical mechanical polishing composition to remove some of the dielectric materials such as silicon dioxide and silicon nitride.

Precipitated bacterial capsular polysaccharides can be efficiently re-solubilised using alcohols as solvents. The invention provides a process for purifying a bacterial capsular polysaccharide, comprising the steps of (a) precipitation of said polysaccharide, followed by (b) solubilisation of the precipitated polysaccharide using ethanol. CTAB can be used for step (a). The material obtained, preferably following hydrolysis and sizing, can be conjugated to a carrier protein and formulated as a vaccine. Also, in vaccines comprising saccharides from both serogroups A and C, the invention provides that the ratio (w/w) of Men A saccharide:MenC saccharide is >1.

The disclosure provides chemical mechanical polishing compositions and methods for polishing polysilicon films with high removal rates. The compositions include 1) an abrasive; 2) at least one compound of structure (I):

##STR00001##

3) at least one compound of structure (II):

##STR00002##

and 4) water; in which the composition does not include tetramethylammonium hydroxide or a salt thereof. The variables n, R.sub.1-R.sub.7, X, Y, and Z.sub.1-Z.sub.3 in structures (I) and (II) are defined in the Specification. The synergistic effect of the compounds of structures (I) and (II) in these chemical mechanical polishing compositions leads to high polysilicon films material removal rate during polishing.