A chemical-mechanical polishing slurry composition, comprising a polishing agent, an amine-based polishing activator, and a roughness adjusting agent, wherein the amine-based polishing activator is a tertiary or quaternary amine, and the roughness adjusting agent is a disaccharide. According to the slurry composition, the roughness of tungsten and silicon oxide films can be modified and the number of particles present on the wafer surface after polishing can be reduces so that defects of the wafer can be prevented.

A polishing method for polishing by sliding a semiconductor silicon wafer, held by a polishing head, against a polishing pad attached to a turn table while supplying a polishing agent, wherein the semiconductor silicon wafer is subjected to primary polishing, secondary polishing, and final polishing in turn, the secondary polishing comprises polishing by an alkaline based polishing agent which includes free abrasive grains and does not include a water-soluble polymer agent, and subsequent rinse polishing by a polishing agent which includes a water-soluble polymer agent and the rinse polishing includes two stages of polishing, wherein, after performing a first stage of the rinse polishing while supplying a polishing agent which includes a water-soluble polymer agent, a second stage of the rinse polishing is performed while supplying a switched polishing agent whose water-soluble polymer agent has an average molecular weight larger than the polishing agent of the first stage.

An etching composition includes an inorganic acid compound, a carboxylic acid compound, a sulfonic acid compound, a glycol compound, a nitrogen-containing dicarbonyl compound, a sulfate compound and water.

There is provided a display device including: a light emitting element; and a drive transistor (DRTr) that includes a coupling section (W1) and a plurality of channel sections (CH) coupled in series through the coupling section (W1), wherein the drive transistor (DRTr) is configured to supply a drive current to the light emitting element.

Present invention provides Chemical Mechanical Planarization Polishing (CMP) compositions for barrier layer and interlayer dielectric (ILD) structure or patterned dielectric layer applications. The CMP compositions contain abrasive, chemical additive comprising polyprotic acid and its salt; corrosion inhibitor; and water soluble solvent; and optionally; second rate booster; a surfactant; pH adjusting agent; oxidizing agent; and chelator.

The present invention is to provide means which can inhibit dissolution of tungsten-containing material by bringing a specific compound into contact with the tungsten-containing material. The present invention relates to a tungsten dissolution inhibitor which contains a sulfonic acid compound or a salt thereof containing a nitrogen atom and having a molecular weight of less than 1,000.

Present invention provides Chemical Mechanical Planarization Polishing (CMP) compositions for Shallow Trench Isolation (STI) applications. The CMP compositions contain ceria coated inorganic oxide particles as abrasives, such as ceria-coated silica particles or any other ceria-coated inorganic oxide particles as core particles; suitable chemical additives comprising at least one organic carboxylic acid group, at least one carboxylate salt group or at least one carboxylic ester group and two or more hydroxyl functional groups in the same molecule; and a water soluble solvent; and optionally biocide and pH adjuster; wherein the composition has a pH of 2 to 12, preferably 3 to 10, and more preferably 4 to 9.

A composition and method for chemical mechanical polishing a substrate containing tungsten to at least inhibit corrosion of the tungsten. The composition includes, as initial components: water; an oxidizing agent; select fatty amine ethoxylate; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally, a pH adjusting agent; and, optionally, a biocide. The chemical mechanical polishing method includes providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate and corrosion of the tungsten is inhibited.

A composition and method for chemical mechanical polishing a substrate containing tungsten to at least inhibit corrosion of the tungsten. The composition includes, as initial components: water; an oxidizing agent; select fatty amine ethoxylate; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally, a pH adjusting agent; and, optionally, a biocide. The chemical mechanical polishing method includes providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate and corrosion of the tungsten is inhibited.

Embodiments relate to a polishing composition is an aqueous composition containing at least colloidal silica, wet-process silica particles, and a water-soluble polymer compound. The water-soluble polymer compound is a copolymer containing a monomer having a carboxylic acid group, a monomer having an amide group, and a monomer having a sulfonic acid group as essential monomers.