Smoothness of glass is improved. A polishing slurry (A) contains amorphous carbon and water, and a total amount of the amorphous carbon and the water is equal to or more than 90% of the whole polishing slurry in terms of mass ratio.

Methods for polishing dielectric layers using an auto-stop slurry in forming semiconductor devices, such as three-dimensional (3D) memory devices, are provided. For example, a stack structure is formed in a staircase region and a core array region. The stack structure includes a plurality of interleaved first material layers and second material layers. Edges of the interleaved first material layers and second material layers define a staircase structure on a side of the stack structure in the staircase region. A dielectric layer is formed over the staircase region and a peripheral region outside the stack structure. The dielectric layer includes a protrusion from the stack structure. The dielectric layer is polished using an auto-stop slurry to remove the protrusion of the dielectric layer.

A CMP slurry composition and a method of polishing a metal layer are provided. In some embodiments, the CMP slurry composition includes about 0.1 to 10 parts by weight of a metal oxide, and about 0.1 to 10 parts by weight of a chelator. The chelator includes a thiol compound or a thiolether compound.

A CMP slurry composition and a method of polishing a metal layer are provided. In some embodiments, the CMP slurry composition includes about 0.1 to 10 parts by weight of a metal oxide, and about 0.1 to 10 parts by weight of a chelator. The chelator includes a thiol compound or a thiolether compound.

According to an aspect of the present invention, there is provided a polishing liquid containing abrasive grains, a hydroxy acid, a polyol, at least one zwitterionic compound selected from the group consisting of an aminocarboxylic acid and an aminosulfonic acid, and a liquid medium, in which a zeta potential of the abrasive grains is positive, an isoelectric point of the aminocarboxylic acid is smaller than 7.0, and pKa of the aminosulfonic acid is larger than 0.

According to an aspect of the present invention, there is provided a polishing liquid containing abrasive grains, a hydroxy acid, a polyol, at least one zwitterionic compound selected from the group consisting of an aminocarboxylic acid and an aminosulfonic acid, and a liquid medium, in which a zeta potential of the abrasive grains is positive, an isoelectric point of the aminocarboxylic acid is smaller than 7.0, and pKa of the aminosulfonic acid is larger than 0.

This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid or a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion containing a C.sub.4 to C.sub.40 hydrocarbon group; and a hydrophilic portion containing at least one group selected from the group consisting of a sulfinite group, a sulfate group, a sulfonate group, a carboxylate group, a phosphate group, and a phosphonate group; in which the hydrophobic portion and the hydrophilic portion are separated by zero to ten alkylene oxide groups. The polishing composition can have a pH of from about 2 to about 6.5.

This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid or a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion containing a C.sub.4 to C.sub.40 hydrocarbon group; and a hydrophilic portion containing at least one group selected from the group consisting of a sulfinite group, a sulfate group, a sulfonate group, a carboxylate group, a phosphate group, and a phosphonate group; in which the hydrophobic portion and the hydrophilic portion are separated by zero to ten alkylene oxide groups. The polishing composition can have a pH of from about 2 to about 6.5.

A polishing composition includes an abrasive; an optional pH adjuster; a barrier film removal rate enhancer; a TEOS removal rate inhibitor; a cobalt removal rate enhancer; an azole-containing corrosion inhibitor; and a cobalt corrosion inhibitor.

A polishing composition includes an abrasive; an optional pH adjuster; a barrier film removal rate enhancer; a TEOS removal rate inhibitor; a cobalt removal rate enhancer; an azole-containing corrosion inhibitor; and a cobalt corrosion inhibitor.