A composition is provided that comprises a calcium carbonate slurry. The calcium carbonate slurry comprises a plurality of calcium carbonate particles suspended in a solution, where the solution comprises a dispersant and an anionic surfactant. The concentration of the calcium carbonate particles in the calcium carbonate slurry is equal to or less than about 2.0 wt. %.

The present invention relates to a polishing agent including: a water-soluble polymer including a copolymer of a monomer (A) which includes at least one member selected from the group consisting of an unsaturated dicarboxylic acid, a derivative thereof, and salts of the unsaturated dicarboxylic acid and the derivative thereof and a monomer (B) other than the monomer (A), comprising an ethylenic double bond and no acidic group; a cerium oxide particle; and water, in which the polishing agent has a pH of 4 to 9.

The present invention relates to a polishing agent including: a water-soluble polymer including a copolymer of a monomer (A) which includes at least one member selected from the group consisting of an unsaturated dicarboxylic acid, a derivative thereof, and salts of the unsaturated dicarboxylic acid and the derivative thereof and a monomer (B) other than the monomer (A), comprising an ethylenic double bond and no acidic group; a cerium oxide particle; and water, in which the polishing agent has a pH of 4 to 9.

Smoothness of glass is improved. A polishing slurry (A) contains amorphous carbon and water, and a total amount of the amorphous carbon and the water is equal to or more than 90% of the whole polishing slurry in terms of mass ratio.

Smoothness of glass is improved. A polishing slurry (A) contains amorphous carbon and water, and a total amount of the amorphous carbon and the water is equal to or more than 90% of the whole polishing slurry in terms of mass ratio.

Methods for polishing dielectric layers using an auto-stop slurry in forming semiconductor devices, such as three-dimensional (3D) memory devices, are provided. For example, a stack structure is formed in a staircase region and a core array region. The stack structure includes a plurality of interleaved first material layers and second material layers. Edges of the interleaved first material layers and second material layers define a staircase structure on a side of the stack structure in the staircase region. A dielectric layer is formed over the staircase region and a peripheral region outside the stack structure. The dielectric layer includes a protrusion from the stack structure. The dielectric layer is polished using an auto-stop slurry to remove the protrusion of the dielectric layer.

Methods for polishing dielectric layers using an auto-stop slurry in forming semiconductor devices, such as three-dimensional (3D) memory devices, are provided. For example, a stack structure is formed in a staircase region and a core array region. The stack structure includes a plurality of interleaved first material layers and second material layers. Edges of the interleaved first material layers and second material layers define a staircase structure on a side of the stack structure in the staircase region. A dielectric layer is formed over the staircase region and a peripheral region outside the stack structure. The dielectric layer includes a protrusion from the stack structure. The dielectric layer is polished using an auto-stop slurry to remove the protrusion of the dielectric layer.

A composition is provided that comprises a calcium carbonate slurry. The calcium carbonate slurry comprises a plurality of calcium carbonate particles suspended in a solution, where the solution comprises a dispersant and an anionic surfactant. The concentration of the calcium carbonate particles in the calcium carbonate slurry is equal to or less than about 2.0 wt. %.

A composition is provided that comprises a calcium carbonate slurry. The calcium carbonate slurry comprises a plurality of calcium carbonate particles suspended in a solution, where the solution comprises a dispersant and an anionic surfactant. The concentration of the calcium carbonate particles in the calcium carbonate slurry is equal to or less than about 2.0 wt. %.

There are provided a chemical mechanical polishing composition, a chemical mechanical polishing slurry and a method for polishing a substrate that can realize a polishing rate equivalent to or higher than that of the existing polishing agent even if total metal content is decreased, or can realize remarkably higher polishing rate than that of the existing polishing agent when using total metal content identical as before. The chemical mechanical polishing composition comprises an iron-based metal catalyst, and a magnesium-based metal catalyst, wherein the metal content of the iron-based metal catalyst is equal to or greater than the metal content of the magnesium-based metal catalyst.