A first quantum dot protective film comprises a first barrier film including a silica deposition layer, and a first diffusion layer. An O/Si ratio of the silica deposition layer is 1.7 or more and 2.0 or less on an atomic ratio basis, and a refractive index of the silica deposition layer is 1.5 or more and 1.7 or less; and a reflectance of the first quantum dot protective film is 10% or more and 20% or less at each of wavelengths of 450 nm, 540 nm and 620 nm, and a transmittance of the first quantum dot protective film is 80% or more and 87% or less at each of wavelengths of 450 nm, 540 nm and 620 nm.

A first quantum dot protective film comprises a first barrier film including a silica deposition layer, and a first diffusion layer. An O/Si ratio of the silica deposition layer is 1.7 or more and 2.0 or less on an atomic ratio basis, and a refractive index of the silica deposition layer is 1.5 or more and 1.7 or less; and a reflectance of the first quantum dot protective film is 10% or more and 20% or less at each of wavelengths of 450 nm, 540 nm and 620 nm, and a transmittance of the first quantum dot protective film is 80% or more and 87% or less at each of wavelengths of 450 nm, 540 nm and 620 nm.

A wavelength conversion material contains a cured product of a curable composition that contains a (meth)allyl compound, a (meth)acryl compound, a photopolymerization initiator, and a quantum dot phosphor.

The invention relates to a material represented by the following formula (I)
(M).sub.8M.sub.6M.sub.6O.sub.24(X,S).sub.2:Mformula (I).
Further, the invention relates to an ultraviolet radiation sensing material, to an X-radiation sensing material, to different uses, to a device and to a method for determining the intensity of ultraviolet radiation.

A semiconductor quantum dot is provided with a non-metallic substrate, and has a particle size ranged from 0.3 to 100 nm. A method of carrying out a chemical reaction or a photoluminescence reaction by using the semiconductor quantum dot is also provided. A redox reaction of a target sample is carried out, an active substance is generated, or an electron-hole pair is produced from the semiconductor quantum dot by providing the semiconductor quantum dot with a predetermined energy. Photons are released by the combination of the electron-hole pair so as to perform the photoluminescence reaction.

Embodiments disclosed herein relate to group III-V QDs and manufacturing methods thereof. More specifically, the embodiments disclosed herein relate to group III-V QDs that have at least one shell of a group II-VI compound surrounding the group III-V QD core. Thus, the QDs disclosed herein are core/shell QDs and in some embodiments may be a core/shell/shell QD. For example, the group III-V QD core material may be surrounded by a shell of a group II-VI compound, which itself may be surrounded by a shell of a group II-VI compound.

Embodiments disclosed herein relate to group III-V QDs and manufacturing methods thereof. More specifically, the embodiments disclosed herein relate to group III-V QDs that have at least one shell of a group II-VI compound surrounding the group III-V QD core. Thus, the QDs disclosed herein are core/shell QDs and in some embodiments may be a core/shell/shell QD. For example, the group III-V QD core material may be surrounded by a shell of a group II-VI compound, which itself may be surrounded by a shell of a group II-VI compound.

Quantum dots that are cadmium-free and/or stoichiometrically tuned are disclosed, as are methods of making them. Inclusion of the quantum dots and others in a stabilizing polymer matrix is also disclosed. The polymers are chosen for their strong binding affinity to the outer layers of the quantum dots such that the bond dissociation energy between the polymer material and the quantum dot is greater than the energy required to reach the melt temperature of the cross-linked polymer.

Quantum dots that are cadmium-free and/or stoichiometrically tuned are disclosed, as are methods of making them. Inclusion of the quantum dots and others in a stabilizing polymer matrix is also disclosed. The polymers are chosen for their strong binding affinity to the outer layers of the quantum dots such that the bond dissociation energy between the polymer material and the quantum dot is greater than the energy required to reach the melt temperature of the cross-linked polymer.

A light-emitting element according to the present disclosure includes at least one pair of light-emitting layers formed between a cathode and an anode and the at least one pair of light-emitting layers includes, in a stated order from the cathode, a P-type light-emitting layer and an N-type light-emitting layer adjacent to each other.