An electronic device includes: an anode and a cathode facing each other; a quantum dot emission layer disposed between the anode and the cathode and including a plurality of quantum dots; and a light emitting source, wherein the quantum dot emission layer is configured to receive electrical energy from the anode and the cathode and to emit light having a first wavelength, wherein the quantum dot emission layer and the light emitting source are configured so that the light emitting source provides the quantum emission layer with light having a second wavelength, and the plurality of quantum dots are excited by the light having the second wavelength and emit light having a third wavelength, wherein the anode, the cathode, or a combination thereof is a light transmitting electrode, and the light of the first wavelength and the light of the third wavelength are emitted through the light transmitting electrode.

Embodiments are directed to a fast and thermal neutron detector material composition for Special Nuclear Material (SNM) detection. Specific embodiments of the material composition result in two excimer scintillation light production mechanisms that provide two corresponding independent techniques for gamma discrimination; namely Pulse Shape Discrimination and Pulse Height Discrimination. A dual discrimination method, Pulse Shape and Pulse Height Discrimination (PSHD), can be implemented relying on both pulse height discrimination and pulse shape discrimination, and can allow the operation of large area, fast and thermal neutron detectors.

Embodiments are directed to a fast and thermal neutron detector material composition for Special Nuclear Material (SNM) detection. Specific embodiments of the material composition result in two excimer scintillation light production mechanisms that provide two corresponding independent techniques for gamma discrimination; namely Pulse Shape Discrimination and Pulse Height Discrimination. A dual discrimination method, Pulse Shape and Pulse Height Discrimination (PSHD), can be implemented relying on both pulse height discrimination and pulse shape discrimination, and can allow the operation of large area, fast and thermal neutron detectors.

A semiconductor nanocrystal composition including a semiconductor nanocrystal, an organic additive, and at least one polymerizable substance selected from a polymerizable monomer, a polymerizable oligomer, and a combination thereof, wherein the composition has haze of greater than or equal to about 40% after polymerization.

A semiconductor nanocrystal composition including a semiconductor nanocrystal, an organic additive, and at least one polymerizable substance selected from a polymerizable monomer, a polymerizable oligomer, and a combination thereof, wherein the composition has haze of greater than or equal to about 40% after polymerization.

Provided is a scintillator having a crystal containing CsI (cesium iodide) as a host material thereof and thallium (Tl) and bismuth (Bi), and a novel scintillator which maintains a high output and simultaneously can further enhance the afterglow characteristics. There is proposed a scintillator having a crystal containing CsI (cesium iodide) as a host material thereof and Tl, Bi and O, wherein the concentration a of Bi with respect to Cs in the crystal is 0.001 atomic ppma5 atomic ppm; and the ratio (a/b) of the concentration a of Bi with respect to Cs in the crystal to the concentration b of O with respect to I in the crystal is 0.00510.sup.4 to 20010.sup.4.

The present invention provides charge transporting molecular glass mixtures, luminescent molecular glass mixtures, or combinations thereof comprising at least two nonpolymeric compounds each independently corresponding to the structure (R.sup.1Y.sup.1).sub.p [(Z.sup.1Y.sup.2).sub.mR.sup.2Y.sup.3J.sub.nZ.sup.2Y.sup.4R.sup.3 wherein m is zero or one; n is zero up to an integer at which said compound starts to become a polymer; p is an integer of from one to eight; each R.sup.1 and R.sup.3 is independently a monovalent aliphatic or cycloaliphatic hydrocarbon group having 1 to 20 carbon atoms, an aromatic group or a multicyclic aromatic nucleus; R.sup.2, Z.sup.1, and Z.sup.2 each independently represent multivalent aliphatic or cycloaliphatic hydrocarbon groups having 1 to 20 carbon atoms or an aromatic group; and Y.sup.1, Y.sup.2, Y.sup.3, and Y.sup.4 each independently represent one or more linking groups.

The present invention relates to metal complexes and to electronic devices, in particular organic electroluminescent devices, comprising these metal complexes.

Two-dimensional (2D) transition-metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure-of-merit, the room-temperature photoluminescence quantum yield (QY) is extremely poor. The prototypical 2D material, MoS.sub.2 is reported to have a maximum QY of 0.6% which indicates a considerable defect density. We report on an air-stable solution-based chemical treatment by an organic superacid which uniformly enhances the photoluminescence and minority carrier lifetime of MoS.sub.2 monolayers by over two orders of magnitude. The treatment eliminates defect-mediated non-radiative recombination, thus resulting in a final QY of over 95% with a longest observed lifetime of 10.80.6 nanoseconds. Obtaining perfect optoelectronic monolayers opens the door for highly efficient light emitting diodes, lasers, and solar cells based on 2D materials.

Two-dimensional (2D) transition-metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure-of-merit, the room-temperature photoluminescence quantum yield (QY) is extremely poor. The prototypical 2D material, MoS.sub.2 is reported to have a maximum QY of 0.6% which indicates a considerable defect density. We report on an air-stable solution-based chemical treatment by an organic superacid which uniformly enhances the photoluminescence and minority carrier lifetime of MoS.sub.2 monolayers by over two orders of magnitude. The treatment eliminates defect-mediated non-radiative recombination, thus resulting in a final QY of over 95% with a longest observed lifetime of 10.80.6 nanoseconds. Obtaining perfect optoelectronic monolayers opens the door for highly efficient light emitting diodes, lasers, and solar cells based on 2D materials.