The present disclosure provides a new corrosion control chemistry for use in ruthenium (Ru) chemical-mechanical polishing (CMP) processes. More specifically, the present disclosure provides an improved CMP slurry chemistry and CMP process for planarizing a ruthenium surface. In the CMP process disclosed herein, a ruthenium surface (e.g., a post-etch ruthenium surface) is exposed to a CMP slurry containing a halogenation reagent, which reacts with the ruthenium surface to create a halogenated ruthenium surface, and a ligand for ligand-assisted reactive dissolution of the halogenated ruthenium surface. Relative amounts of the halogenation agent and the ligand can be controlled in the CMP slurry, so as to provide a diffusion-limited etch process that improves pos-etch surface morphology, while providing high material removal rates.

A chemical mechanical polishing composition for polishing a ruthenium containing substrate comprises, consists of, or consists essentially of a water based liquid carrier; titanium oxide particles dispersed in the liquid carrier, the titanium oxide particles including rutile and anatase such that an x-ray diffraction pattern of the titanium oxide particles has a ratio X:Y greater than about 0.05, wherein X represents an intensity of a peak in the x-ray diffraction pattern having a d-spacing of about 3.24 Å and Y represents an intensity of a peak in the x-ray diffraction pattern having a d-spacing of about 3.51 Å; and a pH in a range from about 7 to about 10. Optional embodiments further include a pH buffer having a pK.sub.a in a range from about 6 to about 9.

A chemical mechanical polishing composition for polishing a ruthenium containing substrate comprises, consists of, or consists essentially of a water based liquid carrier; titanium oxide particles dispersed in the liquid carrier, the titanium oxide particles including rutile and anatase such that an x-ray diffraction pattern of the titanium oxide particles has a ratio X:Y greater than about 0.05, wherein X represents an intensity of a peak in the x-ray diffraction pattern having a d-spacing of about 3.24 Å and Y represents an intensity of a peak in the x-ray diffraction pattern having a d-spacing of about 3.51 Å; and a pH in a range from about 7 to about 10. Optional embodiments further include a pH buffer having a pK.sub.a in a range from about 6 to about 9.

A silicon etching solution includes a mixed solution comprising a quaternary alkylammonium hydroxide and water and further comprises a compound represented by the following formula (1):
R.sup.1O—(C.sub.mH.sub.2mO).sub.n—R.sup.2  (1)
wherein R.sup.1 is a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, R.sup.2 is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, m is an integer of 2 to 6, and n is 1 or 2.

A silicon etching solution includes a mixed solution comprising a quaternary alkylammonium hydroxide and water and further comprises a compound represented by the following formula (1):
R.sup.1O—(C.sub.mH.sub.2mO).sub.n—R.sup.2  (1)
wherein R.sup.1 is a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, R.sup.2 is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, m is an integer of 2 to 6, and n is 1 or 2.

A dry etching method which includes a dry etching step in which an etching gas containing a halogen fluoride being a compound of bromine or iodine and fluorine is brought into contact with a member to be etched (12) including an etching target being a target of etching with the etching gas to etch the etching target without using plasma. The etching target contains copper. Additionally, the dry etching step is performed under temperature conditions of from 140° C. to 300° C. Also disclosed is a method for manufacturing a semiconductor element and a cleaning method using the dry etching method.

A method of producing an inorganic solid pattern is described that includes: a step of coating an inorganic solid with a composition containing a polymetalloxane and an organic solvent; a step of heating the coating film obtained in the coating step, at a temperature of 100° C. or more and 1000° C. or less to form a heat-treated film; a step of forming a pattern of the heat-treated film; and a step of patterning the inorganic solid by etching using the pattern of the heat-treated film as a mask.

A method of producing an inorganic solid pattern is described that includes: a step of coating an inorganic solid with a composition containing a polymetalloxane and an organic solvent; a step of heating the coating film obtained in the coating step, at a temperature of 100° C. or more and 1000° C. or less to form a heat-treated film; a step of forming a pattern of the heat-treated film; and a step of patterning the inorganic solid by etching using the pattern of the heat-treated film as a mask.

This invention pertains to slurries, methods and systems that can be used in chemical mechanical planarization (CMP) of tungsten containing semiconductor device. Using the CMP slurries with additives to counter lowering of pH by tungsten polishing byproducts and maintain pH 4 or higher, the erosion of dense metal (such as tungsten) structures can be greatly diminished.

This invention pertains to slurries, methods and systems that can be used in chemical mechanical planarization (CMP) of tungsten containing semiconductor device. Using the CMP slurries with additives to counter lowering of pH by tungsten polishing byproducts and maintain pH 4 or higher, the erosion of dense metal (such as tungsten) structures can be greatly diminished.