The production of solvents for applications such as heat transfer, cleaning, and degreasing, for example. In particular, the production of solvents derived from 1-chloro-3,3,3-trifluoro-propene, such as chloro and/or fluoro substituted alkanes and chloro and/or fluoro substituted trifluoropropenyl ethers.

The production of solvents for applications such as heat transfer, cleaning, and degreasing, for example. In particular, the production of solvents derived from 1-chloro-3,3,3-trifluoro-propene, such as chloro and/or fluoro substituted alkanes and chloro and/or fluoro substituted trifluoropropenyl ethers.

A lamella for observation on a transmission electron microscope and other analytical instruments includes multiple thin regions separated by thicker regions or ribs. In some embodiments, the lamella can be wider than 50 μm with more than 10 multiple thin regions, with each thin region may being as thin as 10 nm or even thinner. The process for making such lamellae lends itself to automation. The process is fault tolerant in that not all of the multiple thin regions need to be useable as long as one region provides a useful image. Redeposition is reduced because ion beam imaging is reduced in the automated process and because the ribs reduce redeposition between regions.

The present invention provides an etchant which is usable for a long period of time owing to its high indium solubility and reduced precipitation of a salt of oxalic acid and indium, and further has excellent residue removal and antifoaming properties, thereby being suitable for etching indium oxide-based films. An etchant for etching an indium oxide-based film, the etchant containing: (A) oxalic acid; (B) polyvinylpyrrolidone; and (C) water.

The present invention provides an etchant which is usable for a long period of time owing to its high indium solubility and reduced precipitation of a salt of oxalic acid and indium, and further has excellent residue removal and antifoaming properties, thereby being suitable for etching indium oxide-based films. An etchant for etching an indium oxide-based film, the etchant containing: (A) oxalic acid; (B) polyvinylpyrrolidone; and (C) water.

Water treatment compositions are provided that are effective for mitigating corrosion or fouling of surfaces in contact with aqueous systems. The water treatment compositions can include one or more azole compounds, one or more transition metals, and one or more dispersants, in addition to various other additives. The water treatment compositions can exclude phosphorus and still be effective. Methods for mitigating corrosion or fouling of a surface in an aqueous system are also provided.

A pressure vessel has a first end with a first boss, the first boss having a first outer surface. The vessel includes a liner having a second outer surface, a shell disposed over the second outer surface, and a first vent. The first vent is formed onto at least a portion of the first outer surface and at least a portion of the second outer surface. The first vent includes a texture that provides a higher rate of gas flow through the first vent than through a portion of an interface of the liner and shell lacking the texture. In another aspect, a pressure vessel has a first end and a second end, a plurality of first longitudinal vents and a plurality of second longitudinal vents. At least one of first longitudinal vents is circumferentially offset around the pressure vessel from at least one of the second longitudinal vents.

Implementations disclosed herein provide a method of reducing the topography at the alignment and overlay marks area during the writer pole photolithography process in order to reduce the wafer scale variation and reduce the writer pole photolithography process rework rate. In one implementation, an intermediate stage of a wafer for writer pole formation is generated by removing a part of at least one metallic writer pole layer on top of an intermediate stage writer pole wafer to form a recovery trench, depositing an optically transparent material on top of the wafer, wherein the thickness of the optically transparent material is higher than a target recovery trench topography, forming a photoresist pattern on top of the optically transparent material over the recovery trench, etching the optically transparent material, and removing the photoresist pattern and at least part of the remaining optically transparent material.

The invention provides a chemical-mechanical polishing composition comprising: (a) colloidal silica particles that are surface modified with metal ions selected from Mg, Ca, Al, B, Be, and combinations thereof, and wherein the colloidal silica particles have a surface hydroxyl group density of from about 1.5 hydroxyls per nm.sup.2 to about 8 hydroxyls per nm.sup.2 of a surface area of the particles, (b) an anionic surfactant, (c) a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 7, and wherein the polishing composition is substantially free of an oxidizing agent that oxidizes a metal. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon nitride, silicon oxide, and/or polysilicon.

The present invention relates to an alkaline etching agent for treating a surface of a semiconductor substrate for solar cells, containing at least one hydroxystyrene polymer represented by the general formula (1) and an alkaline agent. According to the present invention, some effects are exhibited that the texture formation is made possible to a semiconductor substrate for solar cells at relatively lower temperatures with a shorter amount of time, thereby having excellent productivity.