A sorbent for sorbing radioactive ions is described. The sorbent comprises a porous crystalline powder of a metal oxide or mixed metal oxide. A process for making the sorbent comprises the steps of reacting a metal halide or a mixture of metal halides and an alcohol to form a gel; heating the gel to form a particulate material; exposing the particulate material to an oxidant to form a powder; and heating the powder to a temperature sufficient to at least partially melt or sinter particles of the powder so as to form the sorbent.

The invention relates to a method for treating a solution containing zinc sulphate, so that at least one of the rare metals such as indium, gallium and germanium can be separated from it. A portion of the metals to be separated can be precipitated from zinc sulphate solution by neutralizing the acidic solution and at least a portion is cemented by means of metal powder. The solid precipitates that are formed can be combined and treated subsequently in some suitable way to leach out the desired metals.

The invention relates to a method for treating a solution containing zinc sulphate, so that at least one of the rare metals such as indium, gallium and germanium can be separated from it. A portion of the metals to be separated can be precipitated from zinc sulphate solution by neutralizing the acidic solution and at least a portion is cemented by means of metal powder. The solid precipitates that are formed can be combined and treated subsequently in some suitable way to leach out the desired metals.

Extracting gallium and/or arsenic from materials comprising gallium arsenide is generally disclosed. In some example embodiments, a material comprising gallium arsenide may be exposed to a first heating condition to form a first exhaust. The first exhaust may be directed to an arsenic collection bed including aluminum, which may form aluminum arsenide. The material including gallium arsenide may be exposed to a second heating condition and/or a vacuum may be applied, which may form a second exhaust. The second exhaust may be directed to a gallium collection bed including aluminum, which may form gallium alloys of aluminum.

Extracting gallium and/or arsenic from materials comprising gallium arsenide is generally disclosed. In some example embodiments, a material comprising gallium arsenide may be exposed to a first heating condition to form a first exhaust. The first exhaust may be directed to an arsenic collection bed including aluminum, which may form aluminum arsenide. The material including gallium arsenide may be exposed to a second heating condition and/or a vacuum may be applied, which may form a second exhaust. The second exhaust may be directed to a gallium collection bed including aluminum, which may form gallium alloys of aluminum.

Provided is a method for preparing high-purity indium (In). The method for preparing the high-purity In includes: distilling refined In to obtain an In vapor-containing gas; and condensing the In vapor-containing gas to obtain the high-purity In; where the distilling is conducted at a temperature of 1,000 C. to 1,100 C. under a vacuum degree of 1.010.sup.3 Pa to 5.010.sup.2 Pa; and the condensing is conducted at a temperature of 700 C. to 900 C. under a vacuum degree of 1.010.sup.3 Pa to 5.010.sup.2 Pa. The In vapor-containing gas is obtained by controlling the temperature and vacuum degree of the distilling to evaporate In and impurities with a vapor pressure higher than the In. The temperature and vacuum degree of the condensing are adjusted to condense the In in the In vapor-containing gas.

Provided is a method for preparing high-purity indium (In). The method for preparing the high-purity In includes: distilling refined In to obtain an In vapor-containing gas; and condensing the In vapor-containing gas to obtain the high-purity In; where the distilling is conducted at a temperature of 1,000 C. to 1,100 C. under a vacuum degree of 1.010.sup.3 Pa to 5.010.sup.2 Pa; and the condensing is conducted at a temperature of 700 C. to 900 C. under a vacuum degree of 1.010.sup.3 Pa to 5.010.sup.2 Pa. The In vapor-containing gas is obtained by controlling the temperature and vacuum degree of the distilling to evaporate In and impurities with a vapor pressure higher than the In. The temperature and vacuum degree of the condensing are adjusted to condense the In in the In vapor-containing gas.

The present disclosure relates to a device and method for recovering arsenic and gallium. A closed furnace body is in communication with a vacuuming pipe, and the vacuuming pipe is connected to a vacuuming mechanism. The closed furnace body includes a first furnace body, a second furnace body and a third furnace body. A first heating mechanism and a graphite crucible are arranged inside the first furnace body, the first heating mechanism being used for heating the graphite crucible. A first collection cylinder is in communication with a second collection cylinder. The device for recovering arsenic and gallium of the present disclosure is arranged with a structure for realizing directional condensation of gallium arsenide clusters and arsenic vapor, respectively, to realize high-purity recovery of arsenic and gallium.

The present disclosure relates to a device and method for recovering arsenic and gallium. A closed furnace body is in communication with a vacuuming pipe, and the vacuuming pipe is connected to a vacuuming mechanism. The closed furnace body includes a first furnace body, a second furnace body and a third furnace body. A first heating mechanism and a graphite crucible are arranged inside the first furnace body, the first heating mechanism being used for heating the graphite crucible. A first collection cylinder is in communication with a second collection cylinder. The device for recovering arsenic and gallium of the present disclosure is arranged with a structure for realizing directional condensation of gallium arsenide clusters and arsenic vapor, respectively, to realize high-purity recovery of arsenic and gallium.

A method for co-producing blister copper by enriching germanium and indium from a copper sulfide ore comprises: mixing a copper sulfide ore containing germanium and indium, a reducing agent and a fluxing agent in proportion and then grinding; subjecting the mixture to reduction matte smelting to obtain volatile smoke containing germanium and indium and copper matte respectively; subjecting the copper matte to oxygen-enriched blowing to volatilize germanium and indium, so as to obtain the blister copper and volatile smoke containing germanium and indium respectively; and oxidizing fumes discharged from bag dust collection by ozone, and then absorbing them by spraying alkali liquor to reach up-to-standard discharge. In the reduction smelting stage, the volatilization rate of germanium and indium is more than 70%; and in the copper matte oxygen-enriched blowing stage, the volatilization rate of germanium and indium is more than 25%.