Boron-based amorphous alloys and a preparation method thereof is provided. The composition formula of the alloys is B.sub.aCo.sub.bRE.sub.cX1.sub.dX2.sub.eX3.sub.f, wherein RE is any one or more of La, Ce, Pr, Nd, Sm, Gd, Dy, Er and Y; X1 is any one or more of C, Si and Al; X2 is any one or two of Fe and Ni; X3 is any one or more of Zr, Nb, Mo, Hf, Ta and W; and a, b, c, d, e and f respectively represent atomic percent of each corresponding element in the formula, where: 45≤a≤55, 25≤b≤40, 10≤c≤20, 0≤d≤10, 45≤a+d≤55, 0≤e≤20, 25≤b+e≤40, 0≤f≤3, 10≤c+f≤20 and a+b+c+d+e+f=100. The preparation method of the boron-based amorphous alloy comprises: preparing master alloy ingots using an arc furnace or an induction melting furnace; and then obtaining amorphous ribbons with different thicknesses by a single copper roller melt-spinning equipment.

Boron-based amorphous alloys and a preparation method thereof is provided. The composition formula of the alloys is B.sub.aCo.sub.bRE.sub.cX1.sub.dX2.sub.eX3.sub.f, wherein RE is any one or more of La, Ce, Pr, Nd, Sm, Gd, Dy, Er and Y; X1 is any one or more of C, Si and Al; X2 is any one or two of Fe and Ni; X3 is any one or more of Zr, Nb, Mo, Hf, Ta and W; and a, b, c, d, e and f respectively represent atomic percent of each corresponding element in the formula, where: 45≤a≤55, 25≤b≤40, 10≤c≤20, 0≤d≤10, 45≤a+d≤55, 0≤e≤20, 25≤b+e≤40, 0≤f≤3, 10≤c+f≤20 and a+b+c+d+e+f=100. The preparation method of the boron-based amorphous alloy comprises: preparing master alloy ingots using an arc furnace or an induction melting furnace; and then obtaining amorphous ribbons with different thicknesses by a single copper roller melt-spinning equipment.

The object of the present invention is to provide an alloy ribbon capable of having excellent adhesiveness between the alloy ribbons when a plurality of the alloy ribbons is stacked; and also, to provide a magnetic core using the alloy ribbon. The present invention is an alloy ribbon comprising metals scattered on at least one surface of the alloy ribbon, in which diameters of the scattered metals are 1 μm or more, and the scattered metals include Cu.

This application relates to an aluminum-based amorphous metal particles, a conductive Ink and OLED cathode including the aluminum-based amorphous metal particles, and a method of manufacturing the aluminum-based amorphous metal particles. In one aspect, the amorphous metal particles are represented by a formula Al.sub.xLi.sub.yNi.sub.zY.sub.wCo.sub.v. Here, x, y, z, w, and v denote an atomic ratio, and satisfy the following relationships: 75.0≤x≤90.0, 3.0<y≤7.0, 1.0≤z≤7.0, 2.0≤w≤10.0, 0.0≤v≤5.5, and x+y+z+w+v=100.

Disclosed herein is a shape memory alloy comprising 48 to 50 atomic percent nickel, 15 to 30 atomic percent hafnium, 1 to 5 atomic percent aluminum; with the remainder being titanium. Disclosed herein too is a method of manufacturing a shape memory alloy comprising mixing together to form an alloy nickel, hafnium, aluminum and titanium in amounts of 48 to 50 atomic percent nickel, 15 to 30 atomic percent hafnium, 1 to 5 atomic percent aluminum; with the remainder being titanium; solution treating the alloy at a temperature of 700 to 1300° C. for 50 to 200 hours; and aging the alloy at a temperature of 400 to 800° C. for a time period of 50 to 200 hours to form a shape memory alloy.

Disclosed herein is a shape memory alloy comprising 48 to 50 atomic percent nickel, 15 to 30 atomic percent hafnium, 1 to 5 atomic percent aluminum; with the remainder being titanium. Disclosed herein too is a method of manufacturing a shape memory alloy comprising mixing together to form an alloy nickel, hafnium, aluminum and titanium in amounts of 48 to 50 atomic percent nickel, 15 to 30 atomic percent hafnium, 1 to 5 atomic percent aluminum; with the remainder being titanium; solution treating the alloy at a temperature of 700 to 1300° C. for 50 to 200 hours; and aging the alloy at a temperature of 400 to 800° C. for a time period of 50 to 200 hours to form a shape memory alloy.

A Zr-based amorphous alloy and a manufacturing method thereof, wherein the Zr-based amorphous alloy includes a composition of (Zr.sub.aHf.sub.bCu.sub.cNi.sub.dAl.sub.e).sub.100-XO.sub.x, wherein a, b, c, d, e, x are atomic percentages, and 49≤a≤55, 0.05≤b≤1, 31≤c≤38, 3≤d≤5, 7≤e≤10.5, and 0.05≤x≤0.5, wherein based on the volume of the alloy, the Zr-based amorphous alloy is cast into a rod-shaped sample having a diameter of 12-16 mm and a length of 60 mm, an amorphous content of 40%-95%, a strength of above 1800 MPa, and a fracture toughness of higher than 90 KPam.sup.1/2.

Disclosed is a compound semiconductor material with excellent performance and its utilization. The compound semiconductor may be expressed by Chemical Formula 1 below:
M1.sub.aCo.sub.4Sb.sub.12-xM2.sub.x  Chemical Formula 1 where M1 and M2 are respectively at least one selected from In and a rare earth metal element, 0≤a≤1.8, and 0≤x≤0.6.

In one embodiment, a physical vapor deposition device includes a phase change material sputtering target includes a primary matrix and at least one additional phase. The primary matrix includes at least one element from Group VI of the periodic table excluding oxygen and one or more elements from Group IV or Group V of the periodic table. The additional phase is substantially homogenously dispersed in the primary matrix.

In one embodiment, a physical vapor deposition device includes a phase change material sputtering target includes a primary matrix and at least one additional phase. The primary matrix includes at least one element from Group VI of the periodic table excluding oxygen and one or more elements from Group IV or Group V of the periodic table. The additional phase is substantially homogenously dispersed in the primary matrix.