The present disclosure provides a system for improving wear resistance of a downhole tool component using a bonded diamond compact (BDC) construct. The BDC construct includes a BDC element and an encapsulation layer bonded to the BDC element. The encapsulation layer may fully encapsulate the BDC element. The downhole tool component may be a drill bit, push the bit pad, or mud motor beating assembly. The BDC construct may be disposed in a plug section of the downhole tool component. The encapsulation layer may form an insulating layer over the BDC element to protect the BDC element from thermal damage during hard-facing or brazing of the BDC construct to the downhole tool component.

A continuous precision forming device and process for an amorphous alloy is provided. By means of the device, when a melting platform with an alloy melt is rotated from the melting position to a position just below the forming mould (9), temperature of the alloy melt can be in the range of the overcooled liquid zone temperature of the alloy melt, and then a loading rod (7) drives the forming mould (9) to proceed with pressing forming. According to the process, press-forming is carried out in a certain temperature interval in the amorphous alloy melt solidification process, and the heating, cooling, solidification and forming in the forming process are coordinated, such that continuous forming of the amorphous alloy is achieved.

An intermetallic matrix composite has an intermetallic matrix and a ceramic reinforcement. The intermetallic matrix comprises, in atomic percent: 28.02.0 Nb; 27.02.0 Mo; 27.02.0 Cr; 9.0 2.0 Si; 9.0 2.0 Al; and no more than 10.0 other alloying elements and impurities, if any.

A method is provided for producing a 0.8-4.5 mm thick steel strip with an amorphous, partially amorphous or fine-crystalline microstructure with grain sizes in the range of 10-10000 nm and also a flat steel product made therefrom. A molten steel is cast into a cast strip in a casting device and cooled down at an accelerated rate. Along with Fe and impurities that are unavoidable for production-related reasons, the molten material contains at least two elements belonging to the group Si, B, C and P. In this case, the following applies for the contents of these elements (in % by weight) Si: 1.2-7.0%, B: 0.4-4.0%, C: 0.5-4.0%, P: 1.5-8.0%. With a corresponding composition and a microstructure with corresponding characteristics, a flat steel product according to the invention has a HV0.5 hardness of 760-900.

A sulfurous, metallic glass forming alloy and a method for the production thereof are described.

The invention relates to a resistor alloy (3) for an electrical resistor, in particular for a low-resistance current-measuring resistor, having a copper constituent, a manganese constituent and a nickel constituent. According to the invention, the manganese constituent has a mass fraction of 23% to 28%, while the nickel constituent has a mass fraction of 9% to 13%. The mass fractions of the alloy constituents are adjusted to one another in such a manner that, compared to copper, the resistor alloy (3) has a low thermal electromotive force at 20 C. of less than 1/K. The invention furthermore includes a component made from such a resistor alloy and a production method therefor.

The invention relates to a resistor alloy (3) for an electrical resistor, in particular for a low-resistance current-measuring resistor, having a copper constituent, a manganese constituent and a nickel constituent. According to the invention, the manganese constituent has a mass fraction of 23% to 28%, while the nickel constituent has a mass fraction of 9% to 13%. The mass fractions of the alloy constituents are adjusted to one another in such a manner that, compared to copper, the resistor alloy (3) has a low thermal electromotive force at 20 C. of less than 1/K. The invention furthermore includes a component made from such a resistor alloy and a production method therefor.

After an first heat treatment step, an ambient temperature of a stack is held so that the stack is kept in a temperature range that allows the stack to be crystallized by heating the end of the stack to a second temperature range in the second heat treatment step; and a following expression (1) is satisfied, where Q1 represents an amount of heat required to heat the stack to the first temperature range in the first heat treatment step, Q2 represents an amount of heat that is applied to the stack when heating the end of the stack to the second temperature range in the second heat treatment step, Q3 represents an amount of heat that is released during crystallization of the stack, and Q4 represents an amount of heat required to heat the entire stack to the crystallization start temperature

Q1+Q2+Q3Q4(1).

Provided is low alpha-ray emitting bismuth having an alpha dose of 0.003 cph/cm.sup.2 or less. Additionally provided is a method of producing low alpha-ray emitting bismuth, wherein bismuth having an alpha dose of 0.5 cph/cm.sup.2 or less is used as a raw material, the raw material bismuth is melted in a nitric acid solution via electrolysis to prepare a bismuth nitrate solution having a bismuth concentration of 5 to 50 g/L and a pH of 0.0 to 0.4, the bismuth nitrate solution is passed through a column filled with ion-exchange resin to eliminate polonium contained in the solution by an ion-exchange resin, and bismuth is recovered by means of electrowinning from the solution that was passed through the ion-exchange resin. Recent semiconductor devices are of high density and high capacity, and therefore are subject to increased risk of soft errors caused by the effects of alpha rays emitted from materials in the vicinity of semiconductor chips. In particular, there is a strong demand for higher purification of solder materials used near semiconductor devices, and there is a demand for low alpha-ray emitting materials. Therefore, the present invention aims to elucidate the phenomenon of alpha ray generation from bismuth, and to provide a low alpha-ray emitting, high-purity bismuth that can be applied to the required materials and a production method thereof, as well as to provide an alloy of low alpha-ray emitting bismuth and tin and a production method thereof.

Provided is low alpha-ray emitting bismuth having an alpha dose of 0.003 cph/cm.sup.2 or less. Additionally provided is a method of producing low alpha-ray emitting bismuth, wherein bismuth having an alpha dose of 0.5 cph/cm.sup.2 or less is used as a raw material, the raw material bismuth is melted in a nitric acid solution via electrolysis to prepare a bismuth nitrate solution having a bismuth concentration of 5 to 50 g/L and a pH of 0.0 to 0.4, the bismuth nitrate solution is passed through a column filled with ion-exchange resin to eliminate polonium contained in the solution by an ion-exchange resin, and bismuth is recovered by means of electrowinning from the solution that was passed through the ion-exchange resin. Recent semiconductor devices are of high density and high capacity, and therefore are subject to increased risk of soft errors caused by the effects of alpha rays emitted from materials in the vicinity of semiconductor chips. In particular, there is a strong demand for higher purification of solder materials used near semiconductor devices, and there is a demand for low alpha-ray emitting materials. Therefore, the present invention aims to elucidate the phenomenon of alpha ray generation from bismuth, and to provide a low alpha-ray emitting, high-purity bismuth that can be applied to the required materials and a production method thereof, as well as to provide an alloy of low alpha-ray emitting bismuth and tin and a production method thereof.