Patent classifications
C22C9/00
PURE COPPER PLATE
A pure copper sheet of the present invention has a composition including 99.96 mass % or more of Cu, 0.01 mass ppm or more and 3.00 mass ppm or less of P, 3.0 mass ppm or more of a total content of Ag and Fe, and inevitable impurities as a balance, in which an average crystal grain size of crystal grains on a rolled surface is 10 μm or more, and, in a case where a measurement area of 1 mm.sup.2 or more is measured by an EBSD method at measurement intervals of 5 μm steps, a measurement point where a CI value analyzed with data analysis software OIM is 0.1 or less is excluded, and a boundary where an orientation angle between adjacent pixels is 5° or more is regarded as a crystal grain boundary, a Kernel average misorientation (KAM) value is 1.50 or less.
PURE COPPER PLATE, COPPER/CERAMIC BONDED BODY, AND INSULATED CIRCUIT BOARD
A pure copper sheet has a composition including 99.96 mass% or more of Cu, 9.0 mass ppm or more and less than 100.0 mass ppm of a total content of Ag, Sn, and Fe, and inevitable impurities as a balance, in which an average crystal grain size of crystal grains on a rolled surface is 10 .Math.m or more, the pure copper sheet has crystals in which crystal planes parallel to the rolled surface are a {022} plane, a {002} plane, a {113} plane, a {111} plane, and a {133} plane, and diffraction peak intensities of the individual crystal planes that are obtained by X-ray diffraction measurement by a 2θ/θ method on the rolled surface satisfy I {022}/(I {022} + I {002} + I {113} + I {111} + I {133}) ≤ 0.15, I {002}/I {111} ≥ 10.0, and I {002}/I {113} ≥ 15.0.
COPPER BONDING WIRE
There is provided a copper bonding wire that exhibits a favorable bondability even when a scrub at the time of bonding is reduced. The copper bonding wire is characterized in that when a sum of percentages of Cu, Cu.sub.2O, CuO and Cu(OH).sub.2 on a surface of the wire as measured by X-ray Photoelectron Spectroscopy (XPS) is defined as 100%, Cu[II]/Cu[I] which is a ratio of a total percentage of CuO and Cu(OH).sub.2 (Cu[II]) corresponding to bivalent Cu to a percentage of Cu.sub.2O (Cu[I]) corresponding to monovalent Cu falls within a range from 0.8 to 12.
Wear-resistant sleeve for a gas nozzle for encapsulating a cutting gas jet
In a sleeve for a gas nozzle, a sleeve main body and a sleeve end face is formed at least in part by a wear protection element which is fastened to the sleeve main body and which is composed of a more wear-resistant material than the sleeve main body adjoining the sleeve end face, an inner and/or an outer beveled portion of the sleeve end face are formed at least in part by the wear protection element.
Wear-resistant sleeve for a gas nozzle for encapsulating a cutting gas jet
In a sleeve for a gas nozzle, a sleeve main body and a sleeve end face is formed at least in part by a wear protection element which is fastened to the sleeve main body and which is composed of a more wear-resistant material than the sleeve main body adjoining the sleeve end face, an inner and/or an outer beveled portion of the sleeve end face are formed at least in part by the wear protection element.
Molded solder and molded solder production method
Molded solder includes first metal powder and second metal powder. The first metal powder has a first solidus temperature and a first liquidus temperature and includes an alloy containing metal elements. The second metal powder has a melting temperature or a second solidus temperature and a second liquidus temperature and includes single metal element or an alloy containing metal elements. The melting temperature and the second liquidus temperature are higher than the first liquidus temperature. The molded solder is so constructed that a mixture of the first metal powder and the second metal powder are press-molded. The molded solder is so constructed that a first solidus temperature of a solder becomes higher when the molded solder becomes the solder after the first metal powder has been melted by heating the molded solder at a temperature equal to or higher than the first liquidus temperature.
COLD SPRAY ADDITIVE MANUFACTURING OF MULTI-MATERIAL ELECTRICAL CONTACTS
The presently disclosed subject matter relates to multi-material electrical contacts, and methods of making multi-material electrical contacts.
BONDING WIRE FOR SEMICONDUCTOR DEVICES
There is provided a bonding wire for semiconductor devices that exhibits a favorable bondability even when being applied to wedge bonding at the room temperature, and also achieves an excellent bond reliability. The bonding wire includes a core material of Cu or Cu alloy (hereinafter referred to as a “Cu core material”), and a coating containing a noble metal formed on a surface of the Cu core material. A concentration of Cu at a surface of the wire is 30 to 80 at%.
Lamination shaping powder evaluation method and lamination shaping powder therefor
This invention relates to a method of evaluating a squeegeeing property of powder for lamination shaping by stable criteria. In this method, the squeegeeing property is evaluated using at least a satellite adhesion ratio of the powder and an apparent density of the powder. The satellite adhesion ratio is the ratio of the number of particles on which satellites are adhered to the number of all particles. If the satellite adhesion ratio is equal to or less than 50%, and the apparent density is equal to or more than 3.5 g/cm.sup.3, the squeegeeing property is evaluated as that the powder can be spread into a uniform powder layer in the lamination shaping. Furthermore, if the 50% particle size of a powder obtained by a laser diffraction method is 3 to 250 μm, the squeegeeing property is evaluated as that the powder can be spread into a uniform powder layer in the lamination shaping.
Heat sink and method for manufacturing same
Provided is a heat sink that has a clad structure of a Cu—Mo composite material and a Cu material and has a low coefficient of thermal expansion and high thermal conductivity. A heat sink comprises three or more Cu layers and two or more Cu—Mo composite layers alternately stacked in a thickness direction so that two of the Cu layers are outermost layers on both sides, wherein each of the Cu—Mo composite layers has a thickness section microstructure in which flat Mo phase is dispersed in a Cu matrix. The heat sink has a low coefficient of thermal expansion and also has high thermal conductivity in the thickness direction because the thickness of each of the Cu layers which are the outermost layers is reduced, as compared with a heat sink of a three-layer clad structure having the same thickness and density.