A metal sintering preparation containing (A) 50 to 90% by weight of at least one metal that is present in the form of particles having a coating that contains at least one organic compound, and (B) 6 to 50% by weight organic solvent. The mathematical product of tamped density and specific surface of the metal particles of component (A) is in the range of 40,000 to 80,000 cm.sup.−1.

Provided are a Cu column, a Cu core column, a solder joint, and a through-silicon via, which have the low Vickers hardness and the small arithmetic mean roughness. For the Cu column 1 according to the present invention, its purity is equal to or higher than 99.9% and equal to or lower than 99.995%, its arithmetic mean roughness is equal to or less than 0.3 μm, and its Vickers hardness is equal to or higher than 20 HV and equal to or less than 60 HV. Since the Cu column 1 is not melted at a melting temperature in the soldering and a definite stand-off height (a space between the substrates) can be maintained, it is preferably applied to the three dimensional mounting or the pitch narrowing mounting.

The present application relates to a plain bearing, or a part thereof and to a method for producing same, characterised in that the plain bearing at least partially consists of a CuCrZr alloy. The application also relates to the use of the CuCrZr alloy as a plain bearing material.

The present application relates to a plain bearing, or a part thereof and to a method for producing same, characterised in that the plain bearing at least partially consists of a CuCrZr alloy. The application also relates to the use of the CuCrZr alloy as a plain bearing material.

Disclosed herein are copper-containing (Cu-containing) conductive pastes, copper (Cu) electrodes formed by firing the Cu-containing conductive paste over a substrate, and articles comprising a structural element with such Cu electrodes, wherein, the Cu-containing conductive paste contains a powder mixture of Cu, Ge, and B particles dispersed in an organic medium.

Disclosed herein are copper-containing (Cu-containing) conductive pastes, copper (Cu) electrodes formed by firing the Cu-containing conductive paste over a substrate, and articles comprising a structural element with such Cu electrodes, wherein, the Cu-containing conductive paste contains a powder mixture of Cu, Ge, and B particles dispersed in an organic medium.

A conductive material for connection parts includes a matrix, a Cu—Sn alloy covering layer having a Cu content of 20 to 70 at % and an average thickness of from 0.2 to 3.0 μm, and a Sn covering layer having an average thickness of from 0.05 to 5.0 μm. The matrix is a copper alloy strip containing specified amounts of Cr and Zr or specified amounts of Fe and P, or a Cu—Zn alloy strip containing a specified amount of Zn. The Cu—Sn alloy covering layer and the Sn covering layer are formed in this order on a surface of the matrix.

A material for Cu pillars is formed as cylindrical preforms in advance and connecting these cylindrical preforms to electrodes on a semiconductor chip to form Cu pillars. Due to this, it becomes possible to make the height/diameter ratio of the Cu pillars 2.0 or more. Since electroplating is not used, the time required for production of the Cu pillars is short and the productivity can be improved. Further, the height of the Cu pillars can be raised to 200 μm or more, so these are also preferable for moldunderfill. The components can be freely adjusted, so it is possible to easily design the alloy components to obtain highly reliable Cu pillars.

What is disclosed is an electrode material including a sintered body containing a heat resistant element and Cr and being infiltrated with a highly conductive material. A powder mixture of a heat resistant element powder and a Cr powder is subjected to a provisional sintering in advance, thereby causing solid phase diffusion of the heat resistant element and Cr. After a Mo—Cr solid solution obtained by the provisional sintering is pulverized, the pulverized Mo—Cr solid solution powder is molded and sintered. A sintered body obtained by sintering is subjected to a HIP treatment. The highly conductive metal is disposed on the sintered body after the HIP treatment, and infiltrated into the sintered body by heating at a predetermined temperature. By conducting the HIP treatment, the withstand voltage capability and current-interrupting capability of the electrode material are improved.

A copper alloy sheet material which contains 0.5 to 2.5% by mass of Ni, 0.5 to 2.5% by mass of Co, 0.30 to 1. 2% by mass of Si and 0.0 to 0.5% by mass of Cr, the balance being Cu and unavoidable impurities. The material fulfills the relationships 1.0≦I {200}/I.sub.0 {200}≦5.0 and 5.0 μm≦GS≦60.0 μm, and these have the relationship (Equation 1): 5.0≦{(I {200}/I.sub.0 {200})/GS}×100≦21.0, in which the I {200} represents an X-ray diffraction intensity of a {200} crystal plane, the I.sub.0 {200} represents an X-ray diffraction intensity of a {200} crystal plane of standard pure copper powder, and the GS (μm) represents an average crystal grain size. An electrical conductivity is 43.5% to 55.0% IACS and 0.2% yield strength is 720 to 900 MPa.