A sintered compact target containing an element(s) (A) and an element(s) (B) as defined below is provided. The sintered compact target is free from pores having an average diameter of 1 μm or more, and the number of micropores having an average diameter of less than 1 μm existing in 40000 μm.sup.2 of the target surface is 100 micropores or less. The element(s) (A) is one or more chalcogenide elements selected from S, Se, and Te, and the element(s) (B) is one or more Vb group elements selected from Bi, Sb, As, P, and N. The provided technology is able to eliminate the source of grain dropping or generation of nodules in the target during sputtering, and additionally inhibit the generation of particles.

A sintered compact target containing an element(s) (A) and an element(s) (B) as defined below is provided. The sintered compact target is free from pores having an average diameter of 1 μm or more, and the number of micropores having an average diameter of less than 1 μm existing in 40000 μm.sup.2 of the target surface is 100 micropores or less. The element(s) (A) is one or more chalcogenide elements selected from S, Se, and Te, and the element(s) (B) is one or more Vb group elements selected from Bi, Sb, As, P, and N. The provided technology is able to eliminate the source of grain dropping or generation of nodules in the target during sputtering, and additionally inhibit the generation of particles.

Systems and methods discussed herein relate to Zintl-type thermoelectric materials, including a p-type thermoelectric material according to the formula AM.sub.yX.sub.y, and includes at least one of calcium (Ca), europium (Eu), ytterbium (Yb), and strontium N (Sr), and has a ZT of the above about 0.60 above 675 K. The n-type thermoelectric component includes magnesium (Mg), tellurium (Te), antimony (Sb), and bismuth (Bi) according to the formula Mg.sub.3.2Sb.sub.1.5Bi.sub.0.5-xTe.sub.x that has an average ZT above 0.8 from 400 K to 800 K. The p-type and n-type materials discussed herein may be used alone, in combination with other materials, or in combination with each other in various configurations.

Systems and methods discussed herein relate to Zintl-type thermoelectric materials, including a p-type thermoelectric material according to the formula AM.sub.yX.sub.y, and includes at least one of calcium (Ca), europium (Eu), ytterbium (Yb), and strontium N (Sr), and has a ZT of the above about 0.60 above 675 K. The n-type thermoelectric component includes magnesium (Mg), tellurium (Te), antimony (Sb), and bismuth (Bi) according to the formula Mg.sub.3.2Sb.sub.1.5Bi.sub.0.5-xTe.sub.x that has an average ZT above 0.8 from 400 K to 800 K. The p-type and n-type materials discussed herein may be used alone, in combination with other materials, or in combination with each other in various configurations.

Disclosed are conductive composites comprising a polymer, a conductor selected from metals and metal alloys, and a thickening agent.

Disclosed are conductive composites comprising a polymer, a conductor selected from metals and metal alloys, and a thickening agent.

A solder bonding method that bonds, using a solder joint, an electrode of a circuit board to an electrode of an electronic component includes: depositing, on the electrode of the circuit board, an Sn—Bi-based solder alloy with a lower melting point than a solder alloy deposited on the electrode of the electronic component; mounting the electronic component on the circuit board such that the Sn—Bi-based solder alloy contacts the solder alloy on the electrode of the electronic component; heating the circuit board to a peak temperature of heating of 150° C. to 180° C.; holding the peak temperature of heating at a holding time of greater than 60 seconds and less than or equal to 150 seconds; and cooling, after the heating and to form the solder joint, the circuit board at a cooling rate greater than or equal to 3° C./sec.

A solder bonding method that bonds, using a solder joint, an electrode of a circuit board to an electrode of an electronic component includes: depositing, on the electrode of the circuit board, an Sn—Bi-based solder alloy with a lower melting point than a solder alloy deposited on the electrode of the electronic component; mounting the electronic component on the circuit board such that the Sn—Bi-based solder alloy contacts the solder alloy on the electrode of the electronic component; heating the circuit board to a peak temperature of heating of 150° C. to 180° C.; holding the peak temperature of heating at a holding time of greater than 60 seconds and less than or equal to 150 seconds; and cooling, after the heating and to form the solder joint, the circuit board at a cooling rate greater than or equal to 3° C./sec.

A method for producing solder particles, which includes: a preparation step wherein a base material that has a plurality of recesses and solder fine particles are prepared; an accommodation step wherein at least some of the solder fine particles are accommodated in the recesses; and a fusing step wherein the solder fine particles accommodated in the recesses are fused, thereby forming solder particles within the recesses. With respect to this method for producing solder particles, the average particle diameter of the solder particles is from 1 μm to 30 μm; and the C.V. value of the solder particles is 20% or less.

A method for producing solder particles, which includes: a preparation step wherein a base material that has a plurality of recesses and solder fine particles are prepared; an accommodation step wherein at least some of the solder fine particles are accommodated in the recesses; and a fusing step wherein the solder fine particles accommodated in the recesses are fused, thereby forming solder particles within the recesses. With respect to this method for producing solder particles, the average particle diameter of the solder particles is from 1 μm to 30 μm; and the C.V. value of the solder particles is 20% or less.