A biodegradable Zn—Mg—Bi zinc alloy and a preparation method thereof. The method including: melting magnesium under an inert atmosphere to obtain a magnesium melt; adding bismuth particles to the magnesium melt followed by reaction under stirring and heat preservation treatment to obtain a Mg—Bi alloy melt; allowing the Mg—Bi alloy melt to stand in a furnace; subjecting the Mg—Bi alloy melt to refining, slagging-off, casting and demoulding to obtain Mg-50 wt. % Bi alloy ingot; melting zinc to obtain a zinc melt; adding the Mg-50 wt. % Bi alloy ingot and pure magnesium or pure bismuth followed by heating to a preset temperature, stirring and heat preservation to obtain a Zn—Mg—Bi alloy melt; allowing the Zn—Mg—Bi alloy melt to stand in a furnace followed by refining, slagging-off, casting and demoulding to obtain the biodegradable Zn—Mg—Bi zinc alloy.

Disclosed is a compound semiconductor material with excellent performance and its utilization. The compound semiconductor may be expressed by Chemical Formula 1 below:

M1.sub.aCo.sub.4Sb.sub.12-xM2.sub.x   Chemical Formula 1

where M1 and M2 are respectively at least one selected from In and a rare earth metal element, 0≦a≦1.8, and 0≦x≦0.6.

A connecting method of a circuit member, includes: a first process of preparing a connection material that a solder material disperses in the adhesive; a second process of disposing the first circuit member and the second circuit member to cause the first electrode of the first circuit member and the second electrode of the second circuit member to oppose each other via the connection material; and a third process of compressing the first circuit member and the second circuit member while applying heat to the connection material. The third process includes a first pressing process which is performed before a temperature of the connection material reaches a melting point of the solder material, and a second pressing process which follows the first pressing process.

A connecting method of a circuit member, includes: a first process of preparing a connection material that a solder material disperses in the adhesive; a second process of disposing the first circuit member and the second circuit member to cause the first electrode of the first circuit member and the second electrode of the second circuit member to oppose each other via the connection material; and a third process of compressing the first circuit member and the second circuit member while applying heat to the connection material. The third process includes a first pressing process which is performed before a temperature of the connection material reaches a melting point of the solder material, and a second pressing process which follows the first pressing process.

The disclosure relates to a method for sorting a collection of bodies including cemented carbide bodies and non-cemented carbide bodies. A melt having one or more of bismuth, tin and lead and having a density in the range of 7.0-12.0 g/cm.sup.3 is provided. The collection is subjected to a sorting process based on density difference by providing the collection in the melt and allowing the bodies to be sorted into a first group at a top surface of the melt and a second group at a bottom of the melt. The first group includes non-cemented carbide bodies having a density lower than the density of the melt and the second group includes cemented carbide bodies having a density higher than the density of the melt. The present disclosure also relates to a method for recycling of cemented carbides comprising the sorting method and recycling of the second group.

The disclosure relates to a method for sorting a collection of bodies including cemented carbide bodies and non-cemented carbide bodies. A melt having one or more of bismuth, tin and lead and having a density in the range of 7.0-12.0 g/cm.sup.3 is provided. The collection is subjected to a sorting process based on density difference by providing the collection in the melt and allowing the bodies to be sorted into a first group at a top surface of the melt and a second group at a bottom of the melt. The first group includes non-cemented carbide bodies having a density lower than the density of the melt and the second group includes cemented carbide bodies having a density higher than the density of the melt. The present disclosure also relates to a method for recycling of cemented carbides comprising the sorting method and recycling of the second group.

A lead—free solder wire includes a core wire with a first alloy and a shell coating layer with a second alloy. The first alloy may be composed of Bi—Ag, Bi—Cu, Bi—Ag—Cu, or Bi—Sb; and the second alloy may be composed of Sn, In Sn—Ag, Sn—Cu, Sn—Ag—Cu, Sn—Zn, Bi—Sn, Sn—In, Sn—Sb or Bi—In, such that the shell coating layer is applied to a surface of the core wire. In another implementation, the lead free solder wire may include a first wire with a first alloy and a second wire with a second alloy. The first alloy may be composed of Bi—Ag, Bi—Cu, Bi—Ag—Cu, or Bi—Sb; and the second alloy may be composed of Sn, Sn—Ag, Sn—Cu, Sn—Ag—Cu, Sn—Zn, Bi—Sn, Sn—In, Sn—Sb or Bi—In, such that the first alloy of the first wire and the second alloy of the second wire are braided together.

A lead—free solder wire includes a core wire with a first alloy and a shell coating layer with a second alloy. The first alloy may be composed of Bi—Ag, Bi—Cu, Bi—Ag—Cu, or Bi—Sb; and the second alloy may be composed of Sn, In Sn—Ag, Sn—Cu, Sn—Ag—Cu, Sn—Zn, Bi—Sn, Sn—In, Sn—Sb or Bi—In, such that the shell coating layer is applied to a surface of the core wire. In another implementation, the lead free solder wire may include a first wire with a first alloy and a second wire with a second alloy. The first alloy may be composed of Bi—Ag, Bi—Cu, Bi—Ag—Cu, or Bi—Sb; and the second alloy may be composed of Sn, Sn—Ag, Sn—Cu, Sn—Ag—Cu, Sn—Zn, Bi—Sn, Sn—In, Sn—Sb or Bi—In, such that the first alloy of the first wire and the second alloy of the second wire are braided together.

Provided herein is a skutterudite-type material having high thermoelectric conversion characteristics in a high temperature region. A thermoelectric conversion material is provided that contains a skutterudite-type material represented by the following composition formula (I)

I.sub.xGa.sub.yM.sub.4Pn.sub.12   (I),

wherein x and y satisfy 0.04≦x≦0.11, 0.11≦y≦0.34, and x<y, I represents one or more elements selected from the group consisting of In, Yb, Eu, Ce, La, Nd, Ba, and Sr, M represents one or more elements selected from the group consisting of Co, Rh, Ir, Fe, Ni, Pt, Pd, Ru, and Os, and Pn. represents one or more elements selected from the group consisting of Sb, As, P, Te, Sn, Bi, Ge, Se, and Si.

A thermoelectric conversion material expressed by a chemical formula X.sub.3T.sub.3-yT′.sub.ySb.sub.4 (0.025≦y≦0.5), wherein the X includes one or more elements selected from Zr and Hf, the T includes one or more elements selected from Ni, Pd, and Pt, while including at least Ni, and the T′ includes one or more elements selected from Co, Rh, and Ir.