C22C19/00

Electrode material and use thereof for the manufacture of an inert anode

The invention relates to an electrode material, preferably an inert anode material comprising at least a metal core and a cermet material, characterized in that: said metal core contains at least one nickel (Ni) and iron (Fe) alloy, said cermet material comprises at least as percentages by weight: 45 to 80% of a nickel ferrite oxide phase (2) of composition Ni.sub.xFe.sub.yM.sub.zO.sub.4 with 0.60 ≤x≤0.90; 1.90≤y≤2.40; 0.00≤z≤0.20 and M being a metal selected from aluminum (Al), cobalt (Co), chromium (Cr), manganese (Mn), titanium (Ti), zirconium (Zr), tin (Sn), vanadium (V), niobium (Nb), tantalum (Ta) and hafnium (Hf) or being a combination of these metals, 15 to 45% of a metallic phase (1) comprising at least one alloy of nickel and copper.

Ignition device component produced by cold metal transfer process

The present invention relates to noble metal-containing components prepared by cold metal transfer (CMT) methods, along with methods of preparing such components by CMT. More especially, an advantageous method of preparing a platinum metal group metal or alloy containing ignition device component by CMT is provided.

THERMOELECTRIC CONVERSION ELEMENT

Provided is a thermoelectric conversion element having a high Anomalous Nernst Effect at a lower cost. A thermoelectric conversion element (1) includes a magnetic alloy material containing aluminum, cobalt, and samarium, and a power generation layer (10), in which in the power generation layer (10), a content of aluminum in the magnetic alloy material is in a range of 1 atomic percent to 40 atomic percent, a content of samarium in the magnetic alloy material is in a range of 12 atomic percent to 40 atomic percent, and a content of cobalt in the magnetic alloy material is in a range of 57 atomic percent to 82 atomic percent.

DUAL PHASE SOFT MAGNETIC PARTICLE COMBINATIONS, COMPONENTS AND MANUFACTURING METHODS

Methods for manufacturing dual phase soft magnetic components include combining a plurality of soft ferromagnetic particles with a plurality of paramagnetic particles to form a component structure, wherein the plurality of soft ferromagnetic particles each comprise an electrically insulative coating, and, heat treating the component structure to consolidate the plurality of soft ferromagnetic particles with the plurality of paramagnetic particles.

DUAL PHASE SOFT MAGNETIC PARTICLE COMBINATIONS, COMPONENTS AND MANUFACTURING METHODS

Methods for manufacturing dual phase soft magnetic components include combining a plurality of soft ferromagnetic particles with a plurality of paramagnetic particles to form a component structure, wherein the plurality of soft ferromagnetic particles each comprise an electrically insulative coating, and, heat treating the component structure to consolidate the plurality of soft ferromagnetic particles with the plurality of paramagnetic particles.

Thin seal for an engine

Aspects of the disclosure are directed to a seal configured to interface with at least a first component and a second component of a gas turbine engine. A method for forming the seal includes obtaining an ingot of a fine grained, or a coarse grained, or a columnar grained or a single crystal material from a precipitation hardened nickel base superalloy containing at least 40% by volume of the precipitate of the form Ni3(Al, X), where X is a metallic or refractory element, and processing the ingot to generate a sheet of the material, where the sheet has a thickness within a range of 0.010 inches and 0.050 inches inclusive.

Thin seal for an engine

Aspects of the disclosure are directed to a seal configured to interface with at least a first component and a second component of a gas turbine engine. A method for forming the seal includes obtaining an ingot of a fine grained, or a coarse grained, or a columnar grained or a single crystal material from a precipitation hardened nickel base superalloy containing at least 40% by volume of the precipitate of the form Ni3(Al, X), where X is a metallic or refractory element, and processing the ingot to generate a sheet of the material, where the sheet has a thickness within a range of 0.010 inches and 0.050 inches inclusive.

Bonding wire for semiconductor devices

There is provided a novel Cu bonding wire that achieves a favorable FAB shape and reduces a galvanic corrosion in a high-temperature environment to achieve a favorable bond reliability of the 2nd bonding part. The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy, and a coating layer having a total concentration of Pd and Ni of 90 atomic % or more formed on a surface of the core material. The bonding wire is characterized in that: in a concentration profile in a depth direction of the wire obtained by performing measurement using Auger electron spectroscopy (AES) so that the number of measurement points in the depth direction is 50 or more for the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, an average value X is 0.2 or more and 35.0 or less where X is defined as an average value of a ratio of a Pd concentration C.sub.Pd (atomic %) to an Ni concentration C.sub.Ni (atomic %), C.sub.Pd/C.sub.Ni, for all measurement points in the coating layer, and the total number of measurement points in the coating layer whose absolute deviation from the average value X is 0.3X or less is 50% or more relative to the total number of measurement points in the coating layer.

Electroless Co—W plating film

An object of the present invention is to provide a new electroless plating film which can prevent the diffusion of molten solder to a metal material constituting a conductor. The present invention is an electroless Co—W plating film, wherein content of W is in an amount of 35 to 58 mass % and a thickness of the film is 0.05 μm or more.

Electroless Co—W plating film

An object of the present invention is to provide a new electroless plating film which can prevent the diffusion of molten solder to a metal material constituting a conductor. The present invention is an electroless Co—W plating film, wherein content of W is in an amount of 35 to 58 mass % and a thickness of the film is 0.05 μm or more.