Provided is a master alloy for a sputtering target, wherein, when elements constituting the master alloy are following X1, X2, Y1, Y2, Y2, and Y3; specifically, where X1 is one or two types of Ta or W; X2 is at least one type of Ru, Mo, Nb or Hf; Y1 is one or two types of Cr or Mn; Y2 is one or two types of Co or Ni; and Y3 is one or two types of Ti or V, the master alloy comprises any one combination of X1-Y1, X1-Y2, X1-Y3, X2-Y1, and X2-Y2 of the foregoing constituent elements. This consequently yields superior effects of being able to obtain a sintered sputtering target with few defects and having a high-density and uniform alloy composition, and, by using this target, to realize the deposition of an alloy barrier film with uniform quality and few particles at a high speed.

A method of increasing volume ratio of magnetic particles in a MnBi alloy includes operating a jet miller fed with a MnBi alloy powder containing magnetic particles and non-magnetic particles with gas flow parameters selected such that, only for the magnetic particles, a gas drag force is greater than a centrifugal force within the jet miller to separate the magnetic particles from the non-magnetic particles.

A method of increasing volume ratio of magnetic particles in a MnBi alloy includes operating a jet miller fed with a MnBi alloy powder containing magnetic particles and non-magnetic particles with gas flow parameters selected such that, only for the magnetic particles, a gas drag force is greater than a centrifugal force within the jet miller to separate the magnetic particles from the non-magnetic particles.

A disintegrable downhole article comprises an electrolytically degradable metallic matrix and an energetic material comprising a first metal and a second metal that is in physical contact with the first metal. The first metal and the second metal are selected such that the first metal reacts with the second metal to generate an alloy, an intermetallic compound, heat, or a combination comprising at least one of the foregoing when electrically actuated. A method of controllably removing a disintegrable downhole article comprises disposing the downhole article in a downhole environment; performing a downhole operation; electrically actuating the energetic material; and disintegrating the downhole article.

A disintegrable downhole article comprises an electrolytically degradable metallic matrix and an energetic material comprising a first metal and a second metal that is in physical contact with the first metal. The first metal and the second metal are selected such that the first metal reacts with the second metal to generate an alloy, an intermetallic compound, heat, or a combination comprising at least one of the foregoing when electrically actuated. A method of controllably removing a disintegrable downhole article comprises disposing the downhole article in a downhole environment; performing a downhole operation; electrically actuating the energetic material; and disintegrating the downhole article.

A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

Provided is a master alloy for a sputtering target, wherein, when elements constituting the master alloy are following X1, X2, Y1, Y2, Y2, and Y3; specifically, where X1 is one or two types of Ta or W; X2 is at least one type of Ru, Mo, Nb or Hf; Y1 is one or two types of Cr or Mn; Y2 is one or two types of Co or Ni; and Y3 is one or two types of Ti or V, the master alloy comprises any one combination of X1-Y1, X1-Y2, X1-Y3, X2-Y1, and X2-Y2 of the foregoing constituent elements. The present invention consequently yields superior effects of being able to obtain a sintered sputtering target with few defects and having a high-density and uniform alloy composition, and, by using this target, to realize the deposition of an alloy barrier film with uniform quality and few particles at a high speed.

Provided is a master alloy for a sputtering target, wherein, when elements constituting the master alloy are following X1, X2, Y1, Y2, Y2, and Y3; specifically, where X1 is one or two types of Ta or W; X2 is at least one type of Ru, Mo, Nb or Hf; Y1 is one or two types of Cr or Mn; Y2 is one or two types of Co or Ni; and Y3 is one or two types of Ti or V, the master alloy comprises any one combination of X1-Y1, X1-Y2, X1-Y3, X2-Y1, and X2-Y2 of the foregoing constituent elements. The present invention consequently yields superior effects of being able to obtain a sintered sputtering target with few defects and having a high-density and uniform alloy composition, and, by using this target, to realize the deposition of an alloy barrier film with uniform quality and few particles at a high speed.

A method comprising sintering a Mn and Bi powder compact at a first temperature for a first predetermined duration, based on the first temperature, and sintering the compact at a second temperature, less than the first temperature, for a second predetermined duration, greater than the first duration, is disclosed. The sintering at a first temperature for a first predetermined duration generates a predetermined MnBi LTP transition driving force to decrease a formation energy barrier for transition to MnBi LTP. Sintering the compact at the second temperature for the second predetermined duration forms a magnet containing the MnBi LTP.